By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with st...By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.展开更多
The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is ...The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.展开更多
文摘By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.
文摘The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.
