Knowledge of the structure of thin oxide films is very important for electrochemistry, microelectronics and catalyses. Supported oxide catalysts （supported thin oxide films） are used extensively in the petroleum, ch...Knowledge of the structure of thin oxide films is very important for electrochemistry, microelectronics and catalyses. Supported oxide catalysts （supported thin oxide films） are used extensively in the petroleum, chemical and pollution control industries as catalysts for a wide range of chemically important transformations. They are industrially used for sulfuric acid manufacture, oxidation of o-xylene to phthalic anhydride, ammoxidation of alkylaromatics to aromatic nitriles, selective catalytic reduction of environmentally undesirable NOx emissions from electric power plants to N2 with NH3 and oxidative destruction of persistent bioaccumulative toxic dioxins from emissions of incinerators. This wide range of catalytic applications reflects the versatile activity/selectivity characteristics of oxide catalysts that have their origins in the variability of the molecular structures and electronic properties of the active sites forming on the oxide surface. Therefore, detailed knowledge of the molecular structure and electronic structures of surface thin oxide films, their active sites and their corresponding reactivity/selectivity relationships are the critical fundamental information that is necessary for the molecular engineering of active surface oxide species for specific catalytic applications.展开更多
针对背沟道刻蚀(Back Channel Etch,BCE)技术的非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(Thin Film Transistor,TFTs),建立了一种高浓度掺杂态密度模型(High Concentration Doping Density Of States model,HCD-DOS model),并通过数值模拟...针对背沟道刻蚀(Back Channel Etch,BCE)技术的非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(Thin Film Transistor,TFTs),建立了一种高浓度掺杂态密度模型(High Concentration Doping Density Of States model,HCD-DOS model),并通过数值模拟研究态密度关键参数对器件性能的影响,以此揭示a-IGZO TFTs中制备工艺对导电沟道修复的物理机理.首先,采用结合强度较高的钼/铜双层结构作为栅/源/漏电极,引入BCE方法制备了底栅顶接触(BottomGate Top-Contact,BG-TC)TFTs.其次,建立了适用于BCE技术的a-IGZO TFTs的HCD-DOS模型.随后,基于TCAD(Technology Computer Aided Design)仿真器对态密度关键参数进行数值研究,结果表明,不同态密度参数对a-IGZO TFTs器件转移特性曲线、电学特性以及沟道内部电子浓度分布的影响有所差异.最后,基于HCD-DOS模型探索SiO_(x)钝化层沉积和N_(2)O等离子体处理对器件内部机理的影响.研究发现,N2O等离子体处理对态密度分布和沟道载流子浓度有显著影响,进而导致阈值电压正向漂移.展开更多
文摘Knowledge of the structure of thin oxide films is very important for electrochemistry, microelectronics and catalyses. Supported oxide catalysts （supported thin oxide films） are used extensively in the petroleum, chemical and pollution control industries as catalysts for a wide range of chemically important transformations. They are industrially used for sulfuric acid manufacture, oxidation of o-xylene to phthalic anhydride, ammoxidation of alkylaromatics to aromatic nitriles, selective catalytic reduction of environmentally undesirable NOx emissions from electric power plants to N2 with NH3 and oxidative destruction of persistent bioaccumulative toxic dioxins from emissions of incinerators. This wide range of catalytic applications reflects the versatile activity/selectivity characteristics of oxide catalysts that have their origins in the variability of the molecular structures and electronic properties of the active sites forming on the oxide surface. Therefore, detailed knowledge of the molecular structure and electronic structures of surface thin oxide films, their active sites and their corresponding reactivity/selectivity relationships are the critical fundamental information that is necessary for the molecular engineering of active surface oxide species for specific catalytic applications.
文摘针对背沟道刻蚀(Back Channel Etch,BCE)技术的非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(Thin Film Transistor,TFTs),建立了一种高浓度掺杂态密度模型(High Concentration Doping Density Of States model,HCD-DOS model),并通过数值模拟研究态密度关键参数对器件性能的影响,以此揭示a-IGZO TFTs中制备工艺对导电沟道修复的物理机理.首先,采用结合强度较高的钼/铜双层结构作为栅/源/漏电极,引入BCE方法制备了底栅顶接触(BottomGate Top-Contact,BG-TC)TFTs.其次,建立了适用于BCE技术的a-IGZO TFTs的HCD-DOS模型.随后,基于TCAD(Technology Computer Aided Design)仿真器对态密度关键参数进行数值研究,结果表明,不同态密度参数对a-IGZO TFTs器件转移特性曲线、电学特性以及沟道内部电子浓度分布的影响有所差异.最后,基于HCD-DOS模型探索SiO_(x)钝化层沉积和N_(2)O等离子体处理对器件内部机理的影响.研究发现,N2O等离子体处理对态密度分布和沟道载流子浓度有显著影响,进而导致阈值电压正向漂移.
