基金Project(51801235) supported by the National Natural Science Foundation of ChinaProjects(2018RS3019, 2019JJ30033) supported by the Natural Science Foundation of Hunan Province, China+1 种基金Project(2018CX004) supported by the Innovation-Driven Project of Central South University, ChinaProject(502045005) supported by the Start-up Funding of Central South University, China。
文摘使用溶胶-凝胶法制备铟掺氧化锌(IZO)沟道层,并构建了底栅顶接触的薄膜晶体管(TFT)器件.研究不同热处理气氛对其电学性能以及表面形貌的影响.首先将所制备的IZO薄膜分别在空气、氧气、真空环境下进行550℃退火处理1 h.使用半导体参数仪对制备的TFT器件进行电学性能测试,使用原子力显微镜(AFM)表征薄膜的表面形貌.经分析发现,在真空环境退火处理后,IZO-TFT器件综合性能较好,其迁移率达到0.12 cm^(2)/V·S,电流开关比为2.92×10^(5),阈值电压为-8 V.