采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料,研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪(HRXRD)和荧光显微镜(FL)对晶体质量进行了表征,使用电致发光系统积分球测试对光...采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料,研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪(HRXRD)和荧光显微镜(FL)对晶体质量进行了表征,使用电致发光系统积分球测试对光电性能进行了表征。结果表明:随着气压升高,In的并入量略有降低且均匀性更好,量子阱中的点缺陷数目降低,但是阱垒间界面质量有所下降。在实验选取的4个气压4,6.65,10,13.3 k Pa下,外量子效率最大值随着量子阱生长气压的上升而显著升高,分别为16.60%、23.07%、26.40%、27.66%,但是13.3 k Pa下生长的样品在大电流下EQE随电流droop效应有所加剧,在20 A·cm-2的工作电流下,样品A、B、C、D的EQE分别为16.60%、19.77%、20.03%、19.45%,10 k Pa下生长的量子阱的整体光电性能最好。展开更多
A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor...A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.展开更多
The experimental investigation on vapor bubble growth is performed for analyzing subcooled boiling in a vertical annular channel with inner heating surface and upward water flow under atmospheric pressure. Bulk liquid...The experimental investigation on vapor bubble growth is performed for analyzing subcooled boiling in a vertical annular channel with inner heating surface and upward water flow under atmospheric pressure. Bulk liquid mass flux ranges from 79 kg/m2s to 316 kg/m2s, and subcooling is from 40 K to 60 K. The bubble behaviors from inception to collapse are captured by High-speed photography. The performance of bubble growth recorded by the high-speed photography is given in this paper. The bubble behaviors, effect of the bubble slippage on the heat transfer, and various forces acting on the bubble are discussed.展开更多
The growth of graphene on oriented （111） copper films has been achieved by atmospheric pressure chemical vapor deposition. The structural properties of as-produced graphene have been investigated by scanning tunneli...The growth of graphene on oriented （111） copper films has been achieved by atmospheric pressure chemical vapor deposition. The structural properties of as-produced graphene have been investigated by scanning tunneling microscopy. Anomalous moir6 superstructures composed of well-defined linear periodic modulations have been observed. We report here on comprehensive and detailed studies of these particular moir6 patterns present in the graphene topography revealing that, in certain conditions, the growth can occur on the oxygen-induced reconstructed copper surface and not directly on the oriented （111） copper film as expected.展开更多
Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-S...Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-SiC trench gate MOSFETs were fabricated based on the standard trench transistor fabrication.Current-voltage measurements in forward and reverse bias have been performed on different devices with and without FP protections.It is found that more than 60%of the devices protected with FP termination are able to block 850 V.The measurements also show that the devices have the small leakage currents 0.15 nA at 600 V and 2.5 nA at 800 V,respectively.The experimental results also were compared with the simulated results,which show good agreement with each other in the trend.The limited performance of the devices is mainly because of the damage induced on the trench sidewalls from the etching process and the quality of the SiO2 films.Therefore,the 4H-SiC trench gate MOSFETs are expected to be optimized by reducing the etching damage and growing high-quality SiO2 dielectric films.展开更多
The chemical vapor deposition （CVD） of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic ...The chemical vapor deposition （CVD） of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic defects are unavoidably formed along the Cu grain boundaries, degrading the electrical properties of graphene and increasing the device-to-device variability. Here, we introduce a method of hot-pressing as a surface pre-treatment to improve the thermal stability of Cu thin film for the suppression of grain boundary grooving. The flattened Cu thin film maintains its smooth surface even after the subsequent high temperature CVD process necessary for graphene growth, and the formation of graphene without wrinkles is realized. Graphene field effect transistors （FETs） fabricated using the graphene synthesized on hot-pressed Cu thin film exhibit superior field effect mobility and significantly reduced device-to-device variation.展开更多
The growth and collapse behaviors of a single cavitation bubble near a heated wail and its effect on the heat transfer are numerically investigated. The present study is designed to reveal the mechanism of cavitation ...The growth and collapse behaviors of a single cavitation bubble near a heated wail and its effect on the heat transfer are numerically investigated. The present study is designed to reveal the mechanism of cavitation enhanced heat transfer from a microscopic perspective. In the simulation, the time-dependent Navier-Stokes equations are solved in an axisymmetric two-dimensional domain. The volume of fluid （VOF） method is employed to track the liquid-gas interface. It is assumed that the gas inside the bubble is compressible vapor, and the sur- rounding liquid is incompressible water. Mass transfer between two phases is ignored. The eaiculated bubble pro-files were compared to the available experimental data, and a good agreement was obtained. Then, the relationship among bubble motion, flow field and surface heat transfer coefficient was analyzed. On this basis, the effects of such factors as the initial distance between the bubble and the wall, the initial vapor pressure and the initial bubble nucleus size on the heat transfer enhancement are discussed. The present study is helpful to understand the heat transfer phenomenon in presence of cavitation bubble in liquid.展开更多
Laser was coupled into an optical fiber,on which covered a layer of well-aligned carbon nanotubes(CNTs)serving as cathode,to tune the field emission of the cathode.CNT arrays as field emission cathode were synthesized...Laser was coupled into an optical fiber,on which covered a layer of well-aligned carbon nanotubes(CNTs)serving as cathode,to tune the field emission of the cathode.CNT arrays as field emission cathode were synthesized by chemical vapor deposition(CVD)on a naked fiber core.When the laser was coupled into the fiber,the turn-on voltage(Vto at a current density of 1 mA cm?2)decreased from 1.0 to 0.9 kV and the emission current density increased from 0.83 mA cm?2(at a 1 kV bias voltage)to3.04 mA cm?2 on 40μm diameter fiber.A photon absorption mechanism is attributed to the field emission improvement.The estimated effective work function of CNT arrays on the optical fiber decrease from 4.89 to 4.29 eV.The results show the possibility of constructing a waveguide type laser modulated field emission cathode.展开更多
文摘采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料,研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪(HRXRD)和荧光显微镜(FL)对晶体质量进行了表征,使用电致发光系统积分球测试对光电性能进行了表征。结果表明:随着气压升高,In的并入量略有降低且均匀性更好,量子阱中的点缺陷数目降低,但是阱垒间界面质量有所下降。在实验选取的4个气压4,6.65,10,13.3 k Pa下,外量子效率最大值随着量子阱生长气压的上升而显著升高,分别为16.60%、23.07%、26.40%、27.66%,但是13.3 k Pa下生长的样品在大电流下EQE随电流droop效应有所加剧,在20 A·cm-2的工作电流下,样品A、B、C、D的EQE分别为16.60%、19.77%、20.03%、19.45%,10 k Pa下生长的量子阱的整体光电性能最好。
文摘A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.
基金supported by National Natural Science Foundation of China (No. 51176008)
文摘The experimental investigation on vapor bubble growth is performed for analyzing subcooled boiling in a vertical annular channel with inner heating surface and upward water flow under atmospheric pressure. Bulk liquid mass flux ranges from 79 kg/m2s to 316 kg/m2s, and subcooling is from 40 K to 60 K. The bubble behaviors from inception to collapse are captured by High-speed photography. The performance of bubble growth recorded by the high-speed photography is given in this paper. The bubble behaviors, effect of the bubble slippage on the heat transfer, and various forces acting on the bubble are discussed.
文摘The growth of graphene on oriented （111） copper films has been achieved by atmospheric pressure chemical vapor deposition. The structural properties of as-produced graphene have been investigated by scanning tunneling microscopy. Anomalous moir6 superstructures composed of well-defined linear periodic modulations have been observed. We report here on comprehensive and detailed studies of these particular moir6 patterns present in the graphene topography revealing that, in certain conditions, the growth can occur on the oxygen-induced reconstructed copper surface and not directly on the oriented （111） copper film as expected.
基金supported by the National Natural Science Foundation of China(Grant Nos.61176070,61274079)the Natural Science Foundation of Shaanxi Province(Grant No.2013JQ8012)+1 种基金the Doctoral Fund of Ministry of Education of China(Grant Nos.20110203110010,201302031-0017)the Key Specific Projects of Ministry of Education of China(Grant No.625010101)
文摘Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-SiC trench gate MOSFETs were fabricated based on the standard trench transistor fabrication.Current-voltage measurements in forward and reverse bias have been performed on different devices with and without FP protections.It is found that more than 60%of the devices protected with FP termination are able to block 850 V.The measurements also show that the devices have the small leakage currents 0.15 nA at 600 V and 2.5 nA at 800 V,respectively.The experimental results also were compared with the simulated results,which show good agreement with each other in the trend.The limited performance of the devices is mainly because of the damage induced on the trench sidewalls from the etching process and the quality of the SiO2 films.Therefore,the 4H-SiC trench gate MOSFETs are expected to be optimized by reducing the etching damage and growing high-quality SiO2 dielectric films.
文摘The chemical vapor deposition （CVD） of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic defects are unavoidably formed along the Cu grain boundaries, degrading the electrical properties of graphene and increasing the device-to-device variability. Here, we introduce a method of hot-pressing as a surface pre-treatment to improve the thermal stability of Cu thin film for the suppression of grain boundary grooving. The flattened Cu thin film maintains its smooth surface even after the subsequent high temperature CVD process necessary for graphene growth, and the formation of graphene without wrinkles is realized. Graphene field effect transistors （FETs） fabricated using the graphene synthesized on hot-pressed Cu thin film exhibit superior field effect mobility and significantly reduced device-to-device variation.
基金supported by the National Natural Science Foundation of China (51076151)the National Basic Research Program of China (2011CB710705)
文摘The growth and collapse behaviors of a single cavitation bubble near a heated wail and its effect on the heat transfer are numerically investigated. The present study is designed to reveal the mechanism of cavitation enhanced heat transfer from a microscopic perspective. In the simulation, the time-dependent Navier-Stokes equations are solved in an axisymmetric two-dimensional domain. The volume of fluid （VOF） method is employed to track the liquid-gas interface. It is assumed that the gas inside the bubble is compressible vapor, and the sur- rounding liquid is incompressible water. Mass transfer between two phases is ignored. The eaiculated bubble pro-files were compared to the available experimental data, and a good agreement was obtained. Then, the relationship among bubble motion, flow field and surface heat transfer coefficient was analyzed. On this basis, the effects of such factors as the initial distance between the bubble and the wall, the initial vapor pressure and the initial bubble nucleus size on the heat transfer enhancement are discussed. The present study is helpful to understand the heat transfer phenomenon in presence of cavitation bubble in liquid.
基金supported by the National Natural Science Foundation of China(Grant Nos.91123018,61172041,61172040,50975226,and 60801022)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2008AA03A314)the Fundamental Research Funds for the Central Universities
文摘Laser was coupled into an optical fiber,on which covered a layer of well-aligned carbon nanotubes(CNTs)serving as cathode,to tune the field emission of the cathode.CNT arrays as field emission cathode were synthesized by chemical vapor deposition(CVD)on a naked fiber core.When the laser was coupled into the fiber,the turn-on voltage(Vto at a current density of 1 mA cm?2)decreased from 1.0 to 0.9 kV and the emission current density increased from 0.83 mA cm?2(at a 1 kV bias voltage)to3.04 mA cm?2 on 40μm diameter fiber.A photon absorption mechanism is attributed to the field emission improvement.The estimated effective work function of CNT arrays on the optical fiber decrease from 4.89 to 4.29 eV.The results show the possibility of constructing a waveguide type laser modulated field emission cathode.
