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ZnSe的MOVPE生长相图:以DMZn和H_2Se为源
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作者 段树坤 陆大成 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1996年第6期401-405,共5页
本文基于热力学平衡计算,首次给出以DMZn和H2Se为源,MOVPE生长ZnSe的相图.文中讨论了ZnSe单一凝聚相区的范围,以及可能出现ZnSe(s)+Zn(s)或ZnSe(s)+Se(l)两种双凝聚相区的条件.
关键词 DMZn源 H2Se源 MOVPE 生长相图 硒化锌 发光器件
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ECR-MOCVD方法GaN单晶薄膜生长热力学分析
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作者 王三胜 顾彪 徐茵 《高技术通讯》 EI CAS CSCD 2002年第10期70-73,84,共5页
基于热力学平衡和化学平衡理论 ,针对电子回旋共振金属有机化学气相沉积(ECR MOCVD)系统生长GaN的特点 ,给出了化学平衡模型和理论分析结果。计算得出了六方GaN的生长驱动力ΔP与生长条件 (Ⅲ族源输入分压P0 Ga 、Ⅴ /Ⅲ比、生长温度 )... 基于热力学平衡和化学平衡理论 ,针对电子回旋共振金属有机化学气相沉积(ECR MOCVD)系统生长GaN的特点 ,给出了化学平衡模型和理论分析结果。计算得出了六方GaN的生长驱动力ΔP与生长条件 (Ⅲ族源输入分压P0 Ga 、Ⅴ /Ⅲ比、生长温度 )的关系。发现在 6 0 0~ 90 0℃内GaN沉积生长速率由Ⅲ族源气体的质量输运所控制。计算得到了六方GaN生长的决定因素和相图。理论计算和实验结果通过比较发现是吻合的。 展开更多
关键词 热力学分析 生长相图 GaN单晶薄膜生长 ECR-MOCVD方法 热力学平衡 化学平衡理论 氮化钙
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Thermodynamic Modeling and Phase Diagrams of Hexagonal and Cubic GaN Single-Crystal FilmGrowth by ECR-PEMOCVD Method
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作者 王三胜 顾彪 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第9期1041-1047,共7页
Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation ... Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation indicates that the growt h driving force are functions of growth conditions:group Ⅲ input partial press ure,input Ⅴ/Ⅲ ratio,and growth temperature.Furthermore,the growth phase diag rams of hexagonal and cubic GaN film growth are obtained,which are consistent wi th our experimental conditions to some extent.Through analysis,it is explained t he reason that high temperature and high input Ⅴ/Ⅲ ratio are favorable for he xagonal GaN film growth.This model can be extended to the similar systems used f or GaN single-crystal film growth. 展开更多
关键词 GAN ECR-PEMOCVD thermodynamic analysis growth phase diagram
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Solidification researches using transparent model materials——A review 被引量:3
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作者 HUANG WeiDong WANG LiLin 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第2期377-386,共10页
A review is given in the paper for solidification researches with transparent model materials. The effective experimental me- thod was first proposed by Jackson and Hunt in 1965. The transparent model materials for so... A review is given in the paper for solidification researches with transparent model materials. The effective experimental me- thod was first proposed by Jackson and Hunt in 1965. The transparent model materials for solidification researches are a kind of non-faceted crystals known as "plastic crystals" or "globular molecules", which have very low entropy of melting as that of metals. According to Jackson's theory proposed in 1958, entropy of phase transformation will determine whether the phase interface morphology is smooth or rough in atomic scale, which will lead to faceted or nonfacted phase interface in mi- croscopic and macroscopic scales. Succinonitrile (SCN) and its alloys with water, ethanol, acetone, and NH4C1-H:O solution are most commonly used as transparent model materials for solidification researches of dendritic growth, anisotropy of solid-liquid interfacial energy, crystal nucleation, crystal grain formation, directional solidification, eutectic and peritectic so- lidification, solidification defects formation such as bubble, hot tearing, etc. Among these researches, the most impressive work was the critical test of dendritic growth theories with high purity succinonitrile by Glicksman et al., which gave positive answer to the Ivantsov's analysis and negative answer to the ad hoc condition of the maximum velocity hypothesis. The future researches with transparent model materials could be suggested in three aspects: 1) accurate measurement of material proper- ties and alloy phase diagrams in more plastic crystals, especially to find more transparent eutectic and peritectic alloys; 2) accurate measurement of the grain boundary groove shape to obtain precise data of the anisotropy parameters of the interfacial free energy in transparent model materials; 3) to get clear pictures of solidification processes with morphology details in a rela- tively large area, with continuous movement of liquid and particles, in order to give experimental support to numerical simula- tions aimming at accurate description of microstructure formation during solidification of multicomponent alloys under complex conditions of real casting and welding processes. 展开更多
关键词 transparent model materials SOLIDIFICATION plastic crystal dendritic growth
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Anomalous moire pattern of graphene investigated by scanning tunneling microscopy: Evidence of graphene growth on oxidized Cu(111) 被引量:1
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作者 Nicolas Reckinger Eloise Van Hooijdonk Frederic Joucken Anastasia V. Tyurnina Stephane Lucas Jean-Francois Colome~ 《Nano Research》 SCIE EI CAS CSCD 2014年第1期154-162,共9页
The growth of graphene on oriented (111) copper films has been achieved by atmospheric pressure chemical vapor deposition. The structural properties of as-produced graphene have been investigated by scanning tunneli... The growth of graphene on oriented (111) copper films has been achieved by atmospheric pressure chemical vapor deposition. The structural properties of as-produced graphene have been investigated by scanning tunneling microscopy. Anomalous moir6 superstructures composed of well-defined linear periodic modulations have been observed. We report here on comprehensive and detailed studies of these particular moir6 patterns present in the graphene topography revealing that, in certain conditions, the growth can occur on the oxygen-induced reconstructed copper surface and not directly on the oriented (111) copper film as expected. 展开更多
关键词 GRAPHENE scanning tunnelingmicroscopy Cu(111) copper oxidation atmospheric pressurechemical vapor deposition
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