A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaA...A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2 ： 1 with a peak current density of 22. 5kA/cm^2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element （MOBILE） circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.展开更多
Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT...Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT material structure is epitaxied on InP substrate through molecular beam epitaxy. Based on wet chemical etching, metal lift-off and air bridge interconnection technology, RTD and HEMT are fabricated simultaneously. The peak-to-valley current ratio of RTD is 7.7 and the peak voltage is 0.33 V at room temperature. The pinch-off voltage is -0.5 V and the current gain cut-frequency is 30 GHz for a 1.0 μm gate length depletion mode HEMT. The two devices are conformable in current magnitude, which is suitable for the construction of various RTD/HEMT monolithic integration logic circuits.展开更多
Since novel optoelectronic devices based on the peculiar behaviors of the tunneling probability, e.g., resonant tunneling devices (RTD) and band-pass filter, are steadily proposed, the analytic transfer matrix (ATM) m...Since novel optoelectronic devices based on the peculiar behaviors of the tunneling probability, e.g., resonant tunneling devices (RTD) and band-pass filter, are steadily proposed, the analytic transfer matrix (ATM) method is extended to study these devices. For several examples, we explore the effect of the scattered subwaves on tunneling; it is shown that the resonant or band-pass structures in tunneling probability are determined by the phase shift results from the scattered subwaves.展开更多
By combining resonant tunneling spectra with capacitance-voltage (C-V) characteristics under photo-excitation, we have developed photo-excited, capacitance-sensitive resonant tunneling spectrum (PC-RTS) for probing th...By combining resonant tunneling spectra with capacitance-voltage (C-V) characteristics under photo-excitation, we have developed photo-excited, capacitance-sensitive resonant tunneling spectrum (PC-RTS) for probing the quantized levels of quantum wells in valence band. Inter-well tunneling events have been identified and are in good agreement with the calculated level scheme in the valence band of a quantum well-barrier-quantum well heterostructure. Compared to conventional resonant tunneling spectrum, our method shows remarkable advantages in higher sensitivity for discriminating electronic structures.展开更多
文摘A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2 ： 1 with a peak current density of 22. 5kA/cm^2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element （MOBILE） circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.
基金Supported by National Natural Science Foundation of China (No. 60876009)Tianjin Research Program of Application Foundation and Advanced Technology (No. 09JCZDJC16600)
文摘Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT material structure is epitaxied on InP substrate through molecular beam epitaxy. Based on wet chemical etching, metal lift-off and air bridge interconnection technology, RTD and HEMT are fabricated simultaneously. The peak-to-valley current ratio of RTD is 7.7 and the peak voltage is 0.33 V at room temperature. The pinch-off voltage is -0.5 V and the current gain cut-frequency is 30 GHz for a 1.0 μm gate length depletion mode HEMT. The two devices are conformable in current magnitude, which is suitable for the construction of various RTD/HEMT monolithic integration logic circuits.
基金supported by the State Key Laboratory of Advanced Optical Communication Systems and Networks (Grant No. 2008SH05)
文摘Since novel optoelectronic devices based on the peculiar behaviors of the tunneling probability, e.g., resonant tunneling devices (RTD) and band-pass filter, are steadily proposed, the analytic transfer matrix (ATM) method is extended to study these devices. For several examples, we explore the effect of the scattered subwaves on tunneling; it is shown that the resonant or band-pass structures in tunneling probability are determined by the phase shift results from the scattered subwaves.
基金supported by the National Basic Research Program of China (Grant No. 2011CB932901)
文摘By combining resonant tunneling spectra with capacitance-voltage (C-V) characteristics under photo-excitation, we have developed photo-excited, capacitance-sensitive resonant tunneling spectrum (PC-RTS) for probing the quantized levels of quantum wells in valence band. Inter-well tunneling events have been identified and are in good agreement with the calculated level scheme in the valence band of a quantum well-barrier-quantum well heterostructure. Compared to conventional resonant tunneling spectrum, our method shows remarkable advantages in higher sensitivity for discriminating electronic structures.
