针对电能质量扰动问题,结合局部均值分解(Local Mean Decomposition,LMD),提出了基于LMD的电能质量检测算法。该方法将复杂信号分解为若干乘积函数(Product Function,PF)之和,每个PF由调频函数和调幅函数之积组成,PF的频率可通过对调频...针对电能质量扰动问题,结合局部均值分解(Local Mean Decomposition,LMD),提出了基于LMD的电能质量检测算法。该方法将复杂信号分解为若干乘积函数(Product Function,PF)之和,每个PF由调频函数和调幅函数之积组成,PF的频率可通过对调频函数求导得到,PF的幅值信息包含在调幅函数之中。选取IEEE规定的典型扰动信号,分别用LMD和HHT对其时频分析,仿真结果表明LMD算法在分析短时电压骤降和骤升信号、间谐波扰动和长期电压波动时具有良好的性能。展开更多
The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a p...The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.展开更多
文摘针对电能质量扰动问题,结合局部均值分解(Local Mean Decomposition,LMD),提出了基于LMD的电能质量检测算法。该方法将复杂信号分解为若干乘积函数(Product Function,PF)之和,每个PF由调频函数和调幅函数之积组成,PF的频率可通过对调频函数求导得到,PF的幅值信息包含在调幅函数之中。选取IEEE规定的典型扰动信号,分别用LMD和HHT对其时频分析,仿真结果表明LMD算法在分析短时电压骤降和骤升信号、间谐波扰动和长期电压波动时具有良好的性能。
文摘The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.
