Metamaterials with higher-order topological band gaps that exhibit topological physics beyond the bulkedge correspondence provide unique application values due to their ability of integrating topological boundary stat...Metamaterials with higher-order topological band gaps that exhibit topological physics beyond the bulkedge correspondence provide unique application values due to their ability of integrating topological boundary states at multiple dimensions in a single chip.On the other hand,in the past decade,micromechanical metamaterials are developing rapidly for various applications such as micro-piezoelectricgenerators,intelligent micro-systems,on-chip sensing and self-powered micro-systems.To empower these cutting-edge applications with topological manipulations of elastic waves,higher-order topological mechanical systems working at high frequencies(MHz)with high quality-factors are demanded.The current realizations of higher-order topological mechanical systems,however,are still limited to systems with large scales(centimetres)and low frequencies(k Hz).Here,we report the first experimental realization of an on-chip micromechanical metamaterial as the higher-order topological insulator for elastic waves at MHz.The higher-order topological phononic band gap is induced by the band inversion at the Brillouin zone corner which is achieved by configuring the orientations of the elliptic pillars etched on the silicon chip.With consistent experiments,theory and simulations,we demonstrate the emergence of coexisting topological edge and corner states in a single silicon chip as induced by the higher-order band topology.The experimental realization of on-chip micromechanical metamaterials with higherorder topology opens a new regime for materials and applications based on topological elastic waves.展开更多
基金supported by the Natural Science Foundation of Guangdong Province(2020A1515010549)China Postdoctoral Science Foundation(2020M672615 and 2019M662885)+1 种基金National Postdoctoral Program for Innovative Talents(BX20190122)the Jiangsu specially-appointed professor funding。
文摘Metamaterials with higher-order topological band gaps that exhibit topological physics beyond the bulkedge correspondence provide unique application values due to their ability of integrating topological boundary states at multiple dimensions in a single chip.On the other hand,in the past decade,micromechanical metamaterials are developing rapidly for various applications such as micro-piezoelectricgenerators,intelligent micro-systems,on-chip sensing and self-powered micro-systems.To empower these cutting-edge applications with topological manipulations of elastic waves,higher-order topological mechanical systems working at high frequencies(MHz)with high quality-factors are demanded.The current realizations of higher-order topological mechanical systems,however,are still limited to systems with large scales(centimetres)and low frequencies(k Hz).Here,we report the first experimental realization of an on-chip micromechanical metamaterial as the higher-order topological insulator for elastic waves at MHz.The higher-order topological phononic band gap is induced by the band inversion at the Brillouin zone corner which is achieved by configuring the orientations of the elliptic pillars etched on the silicon chip.With consistent experiments,theory and simulations,we demonstrate the emergence of coexisting topological edge and corner states in a single silicon chip as induced by the higher-order band topology.The experimental realization of on-chip micromechanical metamaterials with higherorder topology opens a new regime for materials and applications based on topological elastic waves.
