High quality GaN films on (0001) sapphire substrates were grown by a commercial MOCVD system (Thomas Swan Corp.).The etch pits and threading dislocations(TDs) in GaN films have been studied by chemical etching methods...High quality GaN films on (0001) sapphire substrates were grown by a commercial MOCVD system (Thomas Swan Corp.).The etch pits and threading dislocations(TDs) in GaN films have been studied by chemical etching methods such as mixed acid solution (H 3PO 4∶H 2SO 4=1∶3) and molten KOH,HCl vapor etching method,scanning electron microscope (SEM) and transmission electron microscope(TEM).SEM images of the same position of GaN films with HCl vapor etching and wet etching methods show notably different densities and shapes of etching pits.The results indicate that HCl vapor etching can show pure edge,pure screw and mixed TDs,mixed acid solution can show pure screw and mixed TDs and molten KOH wet etching only can show pure screw TDs.展开更多
O484.1 95010481GaAs上热壁外延Cd<sub>8.96</sub>Zn<sub>0.04</sub>Te薄膜=Growth ofCd<sub>0.96</sub>Zn<sub>0.04</sub>Te films on GaAs substrates byhot wall epitaxy[刊,中]/...O484.1 95010481GaAs上热壁外延Cd<sub>8.96</sub>Zn<sub>0.04</sub>Te薄膜=Growth ofCd<sub>0.96</sub>Zn<sub>0.04</sub>Te films on GaAs substrates byhot wall epitaxy[刊,中]/陶长远,刘达清（南开大学物理系.天津）//红外与激光技术.—1994,（3）.—15—17首次报道用热壁外延技术在（100）GaAs衬底上生长出Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te（111）薄膜,结果表明,薄膜在15—20μm厚时X射线双晶衍射回摆曲线半高宽在100弧秒以下,其位错腐蚀坑密度等于甚至小于10<sup>3</sup>cm<sup>-2</sup>薄膜组分,层厚均匀,表面光亮如镜。展开更多
文摘High quality GaN films on (0001) sapphire substrates were grown by a commercial MOCVD system (Thomas Swan Corp.).The etch pits and threading dislocations(TDs) in GaN films have been studied by chemical etching methods such as mixed acid solution (H 3PO 4∶H 2SO 4=1∶3) and molten KOH,HCl vapor etching method,scanning electron microscope (SEM) and transmission electron microscope(TEM).SEM images of the same position of GaN films with HCl vapor etching and wet etching methods show notably different densities and shapes of etching pits.The results indicate that HCl vapor etching can show pure edge,pure screw and mixed TDs,mixed acid solution can show pure screw and mixed TDs and molten KOH wet etching only can show pure screw TDs.
文摘O484.1 95010481GaAs上热壁外延Cd<sub>8.96</sub>Zn<sub>0.04</sub>Te薄膜=Growth ofCd<sub>0.96</sub>Zn<sub>0.04</sub>Te films on GaAs substrates byhot wall epitaxy[刊,中]/陶长远,刘达清（南开大学物理系.天津）//红外与激光技术.—1994,（3）.—15—17首次报道用热壁外延技术在（100）GaAs衬底上生长出Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te（111）薄膜,结果表明,薄膜在15—20μm厚时X射线双晶衍射回摆曲线半高宽在100弧秒以下,其位错腐蚀坑密度等于甚至小于10<sup>3</sup>cm<sup>-2</sup>薄膜组分,层厚均匀,表面光亮如镜。
