The dependence of transistor characteristics on grain boundary(GB) position in short-channel ZnO thin film transistors(TFTs) has been investigated using two-dimensional numerical simulations.To simulate the device acc...The dependence of transistor characteristics on grain boundary(GB) position in short-channel ZnO thin film transistors(TFTs) has been investigated using two-dimensional numerical simulations.To simulate the device accurately,both tail states and deep-level states are taken into consideration.It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position,which is different from polycrystalline Si(poly-Si) TFTs.By analysing the mechanism of the carrier transportation in the device,it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.展开更多
The contact effect on the performances of organic thin film transistors is studied here.A C 60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance.By a 3 nm C 6...The contact effect on the performances of organic thin film transistors is studied here.A C 60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance.By a 3 nm C 60 modification,the injection barrier is lowered and the contact resistance is reduced.Thus,the field-effect mobility increases from 0.12 to 0.52 cm 2 /(V·s).It means that inserting a C 60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance.The output curve is simulated by using a charge drift model.Considering the contact effect,the field effect mobility is improved to 1.15 cm 2 /(V·s).It indicates that further reducing the contact resistance of OTFTs should be carried out.展开更多
Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. B...Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 1021cm-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm2·V-1·s-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.展开更多
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 c...A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.展开更多
基金The authors would like to thank the financial supports from Feng Chia University (FCU) and National Science Council (NSC). The implementation supports of integrated circuits by CIC and TSMC are also appreciated.
基金Project supported by the National Natural Science Foundation of China (Grant No. 50872112)NPU Foundation for Fundamental Research,China (Grant No. JC201017)
文摘The dependence of transistor characteristics on grain boundary(GB) position in short-channel ZnO thin film transistors(TFTs) has been investigated using two-dimensional numerical simulations.To simulate the device accurately,both tail states and deep-level states are taken into consideration.It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position,which is different from polycrystalline Si(poly-Si) TFTs.By analysing the mechanism of the carrier transportation in the device,it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10774013,10974013,60978060 and 10804006)the Research Fund for the Doctoral Program of Higher Education,China(Grant Nos.20090009110027,20070004024 and 20070004031)+1 种基金the Beijing Municipal Science and Technology Commission(Grant No.1102028)the National Basic Research Program of China(Grant No.2010CB327704)
文摘The contact effect on the performances of organic thin film transistors is studied here.A C 60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance.By a 3 nm C 60 modification,the injection barrier is lowered and the contact resistance is reduced.Thus,the field-effect mobility increases from 0.12 to 0.52 cm 2 /(V·s).It means that inserting a C 60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance.The output curve is simulated by using a charge drift model.Considering the contact effect,the field effect mobility is improved to 1.15 cm 2 /(V·s).It indicates that further reducing the contact resistance of OTFTs should be carried out.
基金Project supported by the Natural Science Foundation of Shanghai,China(Grant No.13ZR1456800)Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20120073110093)+1 种基金the National Natural Science Foundation of China(Grant Nos.11274229,11474198,61274083,61334008,11274229,11474198,11204175)DOE under DE-FG02-04ER46159
文摘Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 1021cm-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm2·V-1·s-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.
文摘A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.
