The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. Th...The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.展开更多
The conversion efficiency and noise figure (NF) of the silicon-on-insulator (SOI) waveguide-based wavelength converter are investigated with the coupled equations. The effects of the pump power, the nonlinear absorpti...The conversion efficiency and noise figure (NF) of the silicon-on-insulator (SOI) waveguide-based wavelength converter are investigated with the coupled equations. The effects of the pump power, the nonlinear absorption and the waveguide length on the conversion efficiency and noise figure are discussed. The conversion efficiency decreases with the increasing pump power and the noise figure is degraded due to the two-photon absorption (TPA) and the TPA-induced free-carrier absorption (FCA) at the higher pump power. With the increasing of the free carrier lifetime, the conversion efficiency will decrease and the noise figure will increase accordingly. The optimal waveguide length depends on the pump power and the free carrier lifetime. In practical applications, the high conversion efficiency and low noise figure can be achieved by choosing suitable parameters of the silicon waveguide.展开更多
文摘The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.
基金supported by the Major State Basic Research Development Program of China (No.2010CB328304)the National Natural Science Foundation of China (No.60807022)the Discipline Co-construction Project of Beijing Munnicipal Commission of Education (No.YB20081001301)
文摘The conversion efficiency and noise figure (NF) of the silicon-on-insulator (SOI) waveguide-based wavelength converter are investigated with the coupled equations. The effects of the pump power, the nonlinear absorption and the waveguide length on the conversion efficiency and noise figure are discussed. The conversion efficiency decreases with the increasing pump power and the noise figure is degraded due to the two-photon absorption (TPA) and the TPA-induced free-carrier absorption (FCA) at the higher pump power. With the increasing of the free carrier lifetime, the conversion efficiency will decrease and the noise figure will increase accordingly. The optimal waveguide length depends on the pump power and the free carrier lifetime. In practical applications, the high conversion efficiency and low noise figure can be achieved by choosing suitable parameters of the silicon waveguide.
