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正极材料LiNi_(0.5)Mn_(1.5)O_4的制备及离子掺杂改性研究 被引量:5
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作者 史新明 孙加勇 +2 位作者 李世友 徐晓莉 李步成 《电源技术》 CAS CSCD 北大核心 2012年第7期959-961,共3页
采用溶胶-凝胶-自蔓延燃烧法合成了LiNi0.5Mn1.5O4和LiCr0.1Ni0.45Mn1.45O4两种高电压正极材料。通过X射线衍射(XRD)表明铬离子掺杂未改变LiNi0.5Mn1.5O4的晶型结构,但改善了其晶型生长。扫描电镜(SEM)表明两种样品呈规则正八面体外形,... 采用溶胶-凝胶-自蔓延燃烧法合成了LiNi0.5Mn1.5O4和LiCr0.1Ni0.45Mn1.45O4两种高电压正极材料。通过X射线衍射(XRD)表明铬离子掺杂未改变LiNi0.5Mn1.5O4的晶型结构,但改善了其晶型生长。扫描电镜(SEM)表明两种样品呈规则正八面体外形,颗粒较均匀,LiNi0.5Mn1.5O4平均粒径大约为400 nm,LiCr0.1Ni0.45Mn1.45O4平均粒径大约为200 nm。电化学性能测试结果表明,在1 C放电倍率下,两种电池的首次放电比容量分别为111.0 mAh/g和121.5 mAh/g,以容量保持率为首次放电比容量85%为截止条件,分别可以实现32个和51个稳定循环。在此条件下,LiCr0.1Ni0.45Mn1.45O4/Li电池的平均中值电压为4.55 V,略高于LiNi0.5Mn1.5O4/Li电池4.51 V。倍率性能测试结果表明,LiCr0.1Ni0.45Mn1.45O4/Li电池及LiNi0.5Mn1.5O4/Li电池在0.5 C、1 C下放电比容量分别可保持0.2 C时的91.9%、87.1%和91.1%、83.6%。铬离子掺杂可明显改善LiNi0.5Mn1.5O4的综合性能。 展开更多
关键词 高电压 正极材料 LINI0.5MN1.5O4 铬离子掺杂
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LiSrAlF_6晶体Cr^(3+)掺杂中心电子结构的研究
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作者 于俊华 赵卫疆 苏丽萍 《原子与分子物理学报》 CAS CSCD 北大核心 2002年第3期263-266,共4页
使用离散变分方法 (DVM)对LiSrAlF6晶体中以Cr3 + 为中心的多种分子团簇的电子结构进行了计算。主要研究了镶嵌势、团簇大小、基组类型对单电子能量本征值、基态原子轨道特性的影响 。
关键词 LiSrAlF6晶体 Cr^3+掺杂 电子结构 DVM方法 镶嵌势 分子团簇 铬离子掺杂 激光晶体 离散变分法
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Cr^(3+):MgAl_2O_4晶体EPR参量及其电子精细光谱的研究 被引量:10
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作者 魏群 杨子元 《波谱学杂志》 CAS CSCD 北大核心 2004年第1期25-32,共8页
考虑了SS(Spin-Spin)作用和SOO(Spin-Other-Orbit)作用,采用完全对角化方法,结合自旋Hamihonian理论,研究了Cr^(3+):MgAl_2O_4晶体EPR参量及其吸收光谱,理论与实验符合甚好,在此基础上,进一步研究了~4A_2(3d^3)离子EPR参量的微观起源。... 考虑了SS(Spin-Spin)作用和SOO(Spin-Other-Orbit)作用,采用完全对角化方法,结合自旋Hamihonian理论,研究了Cr^(3+):MgAl_2O_4晶体EPR参量及其吸收光谱,理论与实验符合甚好,在此基础上,进一步研究了~4A_2(3d^3)离子EPR参量的微观起源。研究表明,EPR参量起源于四种微观机制:(1)SO(Spin-Orbit)耦合机制;(2)SS耦合机制;(3)SOO耦合机制;(4)SO~SS~SOO总联合作用机制,在这些机制中,SO机制是最主要的。 展开更多
关键词 铝酸镁晶体 铬离子掺杂 SS作用 S00作用 联合作用 EPR参量 电子精细光谱 完全对角化 自旋哈密顿理论
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Diode-Pumped Self Q-Switched and Mode-Locking Nd^3+,Cr^4+:YAG Laser 被引量:2
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作者 李春勇 李平雪 +4 位作者 李德华 冯宝华 傅盘铭 张治国 张世文 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第2期313-315,共3页
Using Nd^3+,Cr^4+:YAG as a laser crystal and saturable absorber simultaneously,we obtain a self-Q-switched and mode-locking laser at 1.06μm with straight cavity structure.Self mode-locking phenomenon was observed at ... Using Nd^3+,Cr^4+:YAG as a laser crystal and saturable absorber simultaneously,we obtain a self-Q-switched and mode-locking laser at 1.06μm with straight cavity structure.Self mode-locking phenomenon was observed at an intracavity intensity of only about 2000 W/cm^2.More than 90% modulation depth is achieved at an intracavity intensity of less than 3.0×10^4 W/cm^2 for the first time.The Q-switched pulse width and repetition rate are found to be connected with the cavity length and the output power. 展开更多
关键词 YAG激光器 锁模 自调Q 二极管泵浦 铬离子掺杂 离子掺杂 脉冲宽度
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Pressure Effects on Spectra of Tunable Laser Crystal GSGG: Cr^3+ IV: Pressure—Induced Shifts of R1 Line, R2 Line, and U Band at 300 K
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作者 MADong-Ping ZHANGJi-Ping 《Communications in Theoretical Physics》 SCIE CAS CSCD 2003年第5期621-630,共10页
By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 lin... By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 line,and U band of GSGG:Cr^3+ at 300 K have been calculated,respectively.The calcualted results are in good agreement with all the experimental data.Their physical origins have also been explained.It is found that the mixingdegree of t2^2(^3T1)e^4T2) and |t2^3 3E>base-wavefunctions in the wavefunctions of R1 level of GSGG:Cr^3+ at 300K is remarkable under normal pressure,and the mixing-degree rapidly decreases with increasing pressure.The change of the mixing-degree with pressure plays a key role not only for the pure electronic'PS of R1 line and R2 line but also the PS of R1 line and R2 line due to EPI.The pressure-dependent behaviors of the pure electronic 'PS of R1 line(or R2 line) and the PS of R1 line(or R2 line) due to EPI are quite different.It is the combined effect of them that gives rise to the total PS of R1 line(or R2 line).In the range of about 15 kar-45kbar,the mergence and /or order-reversal between t2^2(3T1)e^4T2 levels and t2^32T1 levels take place,which cause the fluctuation of the rate of PS for t2^2(3T1)e^4T2(or t2^32T1) with pressure,At 300K,both the temperature-dependent contribution to R1 line(Or R2 line or U band) from EPI and the temperature-independent one are important. 展开更多
关键词 高压 可调激光晶体 光谱 GSGG:Cr^3+ 铬离子掺杂 电子-声子相互作用 耦合
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Energy Spectra of the Tunable Laser Crystal Gd3Ga5O12:Cr^3+ and TheirPressure-Induced Shifts
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作者 MADong-Ping 《Communications in Theoretical Physics》 SCIE CAS CSCD 2004年第1期141-150,共10页
By means of both the theory for pressure-induced shifts (PS) of energy spectra and the theory for shiftsof energy spectra due to electron-phonon interaction (EPI), at 300 K, the 'pure electronic' contributions... By means of both the theory for pressure-induced shifts (PS) of energy spectra and the theory for shiftsof energy spectra due to electron-phonon interaction (EPI), at 300 K, the 'pure electronic' contributions and the contri-butions from EPI to R1 line, R2 line, and U band of GGG:Cr3+ as well as their PS have been calculated, respectively.The total calculated results are in good agreement with all the experimental data. Their physical origins have beenexplained. It is found that the mixing-degree of [t2/2(^3T1)e^4T2) and [t3/2^2E) base-wavefunctions in the wavefunctions of R1 level of GGG:Cr^3+ is considerable under normal pressure, and the mixing-degree rapidly decreases with increasingpressure. The change of the mixing-degree with pressure plays a key role for PS of R1 line or R2 line. At 300 K, boththe temperature-independent contribution to R1 line (or R2 line or U band) from EPI and the temperature-dependentone are important. The remarkable difference between pressure-dependent behaviors of PS of R1 lines of GGG:Cr^3+ andGSGG:Cr^3+ results from the differences of their microscopic properties. The features of emission spectra of GGG:Cr^3+at various pressures have satisfactorily been explained. 展开更多
关键词 能量谱 可调激光器 铬离子掺杂 镓酸钆晶体 电子-光子相互作用
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