In this investigation, protective layers were formed on aluminum substrate by Plasma Electrolytic Deposition (PED) using sodium silicate solution. The relation between the thickness of the layer and process time were ...In this investigation, protective layers were formed on aluminum substrate by Plasma Electrolytic Deposition (PED) using sodium silicate solution. The relation between the thickness of the layer and process time were studied. XRD, SEM, EDS were used to study the layer’s structure, composition and micrograph. The results show that the deposited layers are amorphous and contain mainly oxygen, silicon, and aluminum. The possible formation mechanism of amorphous [Al-Si-O] layer was proposed: During discharge periods, A12O3 phase of the passive film and SiO32"near the substrate surface are sintered into xSiO2(l - x)Al2O, and then transformed into amorphous [Al-Si-O] phase.展开更多
We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The...We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.展开更多
基金supported by the National Natural Sciences Foundation of China(50071066)
文摘In this investigation, protective layers were formed on aluminum substrate by Plasma Electrolytic Deposition (PED) using sodium silicate solution. The relation between the thickness of the layer and process time were studied. XRD, SEM, EDS were used to study the layer’s structure, composition and micrograph. The results show that the deposited layers are amorphous and contain mainly oxygen, silicon, and aluminum. The possible formation mechanism of amorphous [Al-Si-O] layer was proposed: During discharge periods, A12O3 phase of the passive film and SiO32"near the substrate surface are sintered into xSiO2(l - x)Al2O, and then transformed into amorphous [Al-Si-O] phase.
文摘We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.
