This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ...This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts展开更多
基金Project supported by Science and Technology Planning Project of Guangdong Province (Grant No. 2007A010501008)the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No. 2009B090300338)
文摘This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts
