Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electro...Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.展开更多
We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors （the two-dimensional electron gas （2DEG））. It is elucidated that the...We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors （the two-dimensional electron gas （2DEG））. It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.展开更多
Marijuana use as well as abuse is a significant public health and public safety concern in the United States and using hair to identify marijuana users and abusers has been gaining acceptance in a number of venues inc...Marijuana use as well as abuse is a significant public health and public safety concern in the United States and using hair to identify marijuana users and abusers has been gaining acceptance in a number of venues including workplace, court ordered, and substance abuse treatment monitoring. After the presentation of a fully validated 2-dimensional gas chromatography-tandem mass spectrometry method for the detection of 11-nor-9-carboxy-Δ9-tetrahydrocannabinol (THCA), the chief metabolite of the main psychoactive compound in marijuana, Δ9-tetrahydrocannabinol (THC), we evaluated the usefulness of fingernail clippings as an alternative specimen type to hair by the analysis of a set of 60 matched pairs of head hair and fingernail clippings. The limit of detection was 10 fg/mg, the limit of quantitation was 20 fg/mg, and the assay was linear from 20 fg/mg to 500 fg/mg. The intra- and inter-assay imprecision and bias studies at 4 different concentrations (50, 100, 500, and 1000 fg/mg) were acceptable where all % Target observations were within 16% of their expected concentrations and all %CV calculations were less than 13.5%. THCA was detectable in more fingernail specimens (53.3%) than hair specimens (46.7%) and the mean concentrations in nails were on average 4.9 times higher than in hair (1813 fg/mg and 364 fg/mg, respectively). The THCA concentrations in hair and nail were strongly associated (r = 0.974, P < 0.01, n = 60) and the association was significant. The study demonstrated that fingernail clippings are a suitable alternative specimen type to hair to monitor for marijuana use and abuse.展开更多
CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas m...CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas mixtures with c-C4F8 and buffer gases N2 and CO2 by considering dielectric strength from electron transport parameters based on the Boltzmann method and synergistic effect analysis,compared with SF6 gas mixtures.The results confirm that the critical electric field strength of CF3I/c-C4F8/70%CO2 is greater than that of 30%SF6/70%CO2 when the CF3I content is greater than 17%.Moreover,a higher content of c-C4F8 decreases the sensitivity of gas mixtures to an electric field,and this phenomenon is more obvious in CF3I/c-C4F8/CO2 gas mixtures.The synergistic effects for CF3I/c-C4F8/70%N2 were most obvious when the c-C4F8 content was approximately 20%,and for CF3I/c-C4F8/70%CO2 when the c-C4F8 content was approximately 10%.On the basis of this research,CF3I/c-C4F8/70%N2 shows better insulation performance when the c-C4F8 content is in the15%–20%range.For CF3I/c-C4F8/70%CO2,when the c-C4F8 content is in the 10%–15%range,the gas mixtures have excellent performance.Hence,these gas systems might be used as alternative gas mixtures to SF6 in high-voltage equipment.展开更多
Electronic nose(eNose) is a modern bioelectronic sensor for monitoring biological processes that convert CO_(2) into valueadded products, such as products formed during photosynthesis and microbial fermentation. eNose...Electronic nose(eNose) is a modern bioelectronic sensor for monitoring biological processes that convert CO_(2) into valueadded products, such as products formed during photosynthesis and microbial fermentation. eNose technology uses an array of sensors to detect and quantify gases, including CO_(2), in the air. This study briefly introduces the concept of eNose technology and potential applications thereof in monitoring CO_(2) conversion processes. It also provides background information on biological CO_(2) conversion processes. Furthermore, the working principles of eNose technology vis-à-vis gas detection are discussed along with its advantages and limitations versus traditional monitoring methods. This study also provides case studies that have used this technology for monitoring biological CO_(2) conversion processes. eNose-predicted measurements were observed to be completely aligned with biological parameters for R~2 values of 0.864, 0.808, 0.802, and 0.948. We test eNose technology in a variety of biological settings, such as algae farms or bioreactors, to determine its effectiveness in monitoring CO_(2) conversion processes. We also explore the potential benefits of employing this technology vis-à-vis monitoring biological CO_(2) conversion processes, such as increased reaction efficiency and reduced costs versus traditional monitoring methods. Moreover, future directions and challenges of using this technology in CO_(2) capture and conversion have been discussed. Overall, we believe this study would contribute to developing new and innovative methods for monitoring biological CO_(2) conversion processes and mitigating climate change.展开更多
Simulations are conducted on capacitively coupled Ar/O_(2)mixed gas discharges employing a one-dimensional fluid coupled with an electron Monte Carlo(MC)model.The research explores the impact of different O_(2)ratio a...Simulations are conducted on capacitively coupled Ar/O_(2)mixed gas discharges employing a one-dimensional fluid coupled with an electron Monte Carlo(MC)model.The research explores the impact of different O_(2)ratio and pressures on the discharge characteristics of Ar/O_(2)plasma.At a fixed Ar/O_(2)gas ratio,with the increasing pressure,higher ion densities,as well as a slight increase in electron density in the bulk region can be observed.The discharge remains dominated by the drift-ambipolar(DA)mode,and the flux of O(3P)at the electrode increases with the increasing pressure due to higher background gas density,while the fluxes of O(1D)and Ardecrease due to the pronounced loss rate.With the increasing proportion of O_(2),a change in the dominant discharge mode from a mode to DA mode can be detected,and the O_(2)-associated charged particle densities are significantly increased.However,Ar+density shows a trend of increasing and then decreasing,while for neutral fluxes at the electrode,Arflux decreases,and O(3P)flux increases with the reduced Ar gas proportion,while trends in O(1D)flux show slight differences.The evolution of the densities of the charged particle and the neutral fluxes under different discharge parameters are discussed in detail using the ionization characteristics as well as the transport properties.Hopefully,more comprehensive understanding of Ar/O_(2)discharge characteristics in this work will provide a valuable reference for the industry.展开更多
In the present paper,the electron beam irradiation was used to improve gas sensing properties of ZnGa_2O_4 gas sensors.The effects of electron beam irradiation on the performance of ZnGa_2O_4 gas sensors were reported...In the present paper,the electron beam irradiation was used to improve gas sensing properties of ZnGa_2O_4 gas sensors.The effects of electron beam irradiation on the performance of ZnGa_2O_4 gas sensors were reported.Results show that the sensitivity of ZnGa_2O_4 gas sensors to various gases increased after electron beam irradiation,and the optimal working temperature decreased.The effect of irradiation dose and the reaction mechanism were discussed.展开更多
We theoretically present the intrinsic limits to electron mobility in the modulation-doped AIGaN/GaN two-dimensional electron gas （2DEG） due to effects including acoustic deformation potential （DP） scattering, pie...We theoretically present the intrinsic limits to electron mobility in the modulation-doped AIGaN/GaN two-dimensional electron gas （2DEG） due to effects including acoustic deformation potential （DP） scattering, piezoelectric scattering （PE）, and polar-optic phonon scattering （POP）. We find that DE and PE are the more significant limiting factors at intermediate temperatures of 40 K to 250 K, while POP becomes dominant as room temperature is approached. Detailed numerical results are presented for the change of electron mobility with respect to temperature and carrier density. We conclude that these three types of phonon scattering, which are generally determined by the material properties but not the technical processing, are hard limits to the 2DEG mobility.展开更多
In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field p...In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.展开更多
The first-principles calculations are employed to investigate the electrical properties of polar MgO/BaTiO3（110）interfaces. Both n-type and p-type polar interfaces show a two-dimensional metallic behavior. For the n...The first-principles calculations are employed to investigate the electrical properties of polar MgO/BaTiO3（110）interfaces. Both n-type and p-type polar interfaces show a two-dimensional metallic behavior. For the n-type polar interface,the interface Ti3d electrons are the origin of the metallic and magnetic properties. Varying the thickness of Ba TiO3 may induce an insulator–metal transition, and the critical thickness is 4 unit cells. For the p-type polar interface, holes preferentially occupy the interface O 2p y state, resulting in a conducting interface. The unbalance of the spin splitting of the O 2p states in the interface Mg O layer leads to a magnetic moment of about 0.25μB per O atom at the interface.These results further demonstrate that other polar interfaces, besides LaAlO3/SrTiO3, can show a two-dimensional metallic behavior. It is helpful to fully understand the role of polar discontinuity on the properties of the interface, which widens the field of polar-nonpolar interfaces.展开更多
Consequences of an exceedingly strong electric field (E field) on the ground state energetics and transport properties of a 2D spinless electron gas in a perpendicular magnetic field (a Quantum Hall Effect (QHE) confi...Consequences of an exceedingly strong electric field (E field) on the ground state energetics and transport properties of a 2D spinless electron gas in a perpendicular magnetic field (a Quantum Hall Effect (QHE) configuration) are investigated to all orders in the fields. For a conventional semiconductor, we find fractional values of the Hall conductivity and some magnetoelectric coefficients for certain values of E and B fields that do not result from interactions or impurities, but are a pure consequence of a strong enough in-plane E field. We also determine analytically the ground state energy, and response properties such as magnetization and polarization as functions of the electromagnetic field in the strong E field limit. In the case of Graphene, we obtain more complex behaviors leading to the possibility of irrational Hall values. The results are also qualitatively discussed in connection to various mechanisms for the QHE-breakdown.展开更多
We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field streng...We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field strengths are decided by a balance of electron generation and loss based on chemical reactions estimated by the electron energy distribution function （EEDF）, which employs the Boltzmann equation method with two-term expanding approximation in the steady-state Townsend （SST） condition. During the insulation recovery phase, the hot CF3I/CO2 gas mixtures have maximum dielectric strength at a temperature of about 1500 K. At room temperature 300 K, the electric strength after arc extinction （90.3 Td, 1 Td=10-21 V.m2） is only 38% of the original value before arc （234.9 Td）. The adverse insulation recovery ability of CF3I/CO2 gas mixtures in arc extinction hinders its application in electric circuit breakers and other switchgears as an arc quenching and insulating medium.展开更多
Two-dimensional(2D)honeycomb-like materials have been widely studied due to their fascinating properties.In particular,2D honeycomb-like transition metal monolayers,which are good 2D ferromagnet candidates,have attrac...Two-dimensional(2D)honeycomb-like materials have been widely studied due to their fascinating properties.In particular,2D honeycomb-like transition metal monolayers,which are good 2D ferromagnet candidates,have attracted intense research interest.The honeycomb-like structure of hafnium,hafnene,has been successfully fabricated on the Ir(111)substrate.However,its electronic structure has not yet been directly elucidated.Here,we report the electronic structure of hafnene grown on the Ir(111)substrate using angle-resolved photoemission spectroscopy(ARPES).Our results indicate that the presence of spin-orbit coupling and Hubbard interaction suppresses the earlier predicted Dirac cones at the K points of the Brillouin zone.The observed band structure of hafnene near the Fermi level is very simple:an electron pocket centered at theΓpoint of the Brillouin zone.This electron pocket shows typical parabolic dispersion,and its estimated electron effective mass and electron density are approximately 1.8_(me)and 7×10^(14)cm^(-2),respectively.Our results demonstrate the existence of 2D electron gas in hafnene grown on the Ir(111)substrate and therefore provide key information for potential hafnene-based device applications.展开更多
Tattoo electronics has attracted intensive interest in recent years due to its comfortable wearing and imperceivable sensing,and has been broadly applied in wearable healthcare and human-machine interface.However,the ...Tattoo electronics has attracted intensive interest in recent years due to its comfortable wearing and imperceivable sensing,and has been broadly applied in wearable healthcare and human-machine interface.However,the tattoo electrodes are mostly composed of metal films and conductive polymers.Two-dimensional(2D)materials,which are superior in conductivity and stability,are barely studied for electronic tattoos.Herein,we reported a novel electronic tattoo based on large-area Mo_(2)C film grown by chemical vapor deposition(CVD),and applied it to accurately and imperceivably acquire on-body electrophysiological signals and interface with robotics.High-quality Mo_(2)C film was obtained via optimizing the distribution of gas flow during CVD growth.According to the finite element simulation(FES),bottom surface of Cu foil covers more stable gas flow than the top surface,thus leading to more uniform Mo_(2)C film.The resulting Mo_(2)C film was transferred onto tattoo paper,showing a total thickness of~3μm,sheet resistance of 60-150Ω/sq,and skin-electrode impedance of~5×10^(5)Ω.Such thin Mo_(2)C electronic tattoo(MCET in short)can form conformal contact with skin and accurately record electrophysiological signals,including electromyography(EMG),electrocardiogram(ECG),and electrooculogram(EOG).These body signals collected by MCET can not only reflect the health status but also be transformed to control the robotics for human-machine interface.展开更多
Density functional theory within the local density approximation is used to investigate the effect of the oxygen va- cancy on the LaGaO3/SrTiO3 （001） heterojunction. It is found that the energy favorable configurati...Density functional theory within the local density approximation is used to investigate the effect of the oxygen va- cancy on the LaGaO3/SrTiO3 （001） heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3rd layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO3 side. Compared with the heterojunction without introducing oxygen vacancy, the heterojunction with introducing the oxygen vacancy does not change the origin of the two-dimensional electron gas （2DEG）, that is, the 2DEG still originates from the dxy electrons, which are split from the t2g states of Ti atom at interface; however the oxygen vacancy is not beneficial to the confinement of the 2DEG. The extra electrons caused by the oxygen vacancy dominantly occupy the 3dx2-y2 orbitals of the Ti atom nearest to the oxygen vacancy, thus the density of carrier is enhanced by one order of magnitude due to the introduction of oxygen vacancy compared with the density of the ideal structure heterojunction.展开更多
To date,development of high-performance,stretchable gas sensors operating at and below room temperature(RT)remains a challenge in terms of traditional sensing materials.Herein,we report on a high-performance NO_(2) ga...To date,development of high-performance,stretchable gas sensors operating at and below room temperature(RT)remains a challenge in terms of traditional sensing materials.Herein,we report on a high-performance NO_(2) gas sensor based on a self-healable,recyclable,ultrastretchable,and stable polyvinyl alcohol–cellulose nanofibril double-network organohydrogel,which features ultrahigh sensitivity(372%/ppm),low limit of detection(2.23 ppb),relatively fast response and recovery time(41/144 s for 250 ppb NO_(2)),good selectivity against interfering gases(NH3,CO_(2),ethanol,and acetone),excellent reversibility,repeatability,and long-term stability at RT or even at−20°C.In particular,this sensor shows outstanding stability against large deformations and mechanical damages so that it works normally after rapid self-healing or remolding after undergoing mechanical damage without significant performance degradation,which has major advantages compared to state-of-the-art gas sensors.The high NO_(2) sensitivity and selectivity are attributed to the selective redox reactions at the threephase interface of gas,gel,and electrode,which is even boosted by applying tensile strain.With a specific electrical circuit design,a wireless NO_(2) alarm system based on this sensor is created to enable continuous,real-time,and wireless NO_(2) detection to avoid the risk of exposure to NO_(2) higher than threshold concentrations.展开更多
We report an abnormal phenomenon that the source-drain current(I_(D))of AlGaN/GaN heterostructure devices decreases under visible light irradiation.When the incident light wavelength is 390 nm,the photon energy is les...We report an abnormal phenomenon that the source-drain current(I_(D))of AlGaN/GaN heterostructure devices decreases under visible light irradiation.When the incident light wavelength is 390 nm,the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of ID.Based on the UV light irradiation,a decrease of I_(D) can still be observed when turning on the visible light.We speculate that this abnormal phenomenon is related to the surface barrier height,the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level.For visible light,its photon energy is less than the surface barrier height of the AlGaN layer.The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN.The electrons trapped in ionized donor-like surface states show a long relaxation time,and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas(2DEG)channel at AlGaN/GaN interface,which causes the decrease of ID.For the UV light,when its photon energy is larger than the surface barrier height of the AlGaN layer,electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly,which cause the increase of ID.展开更多
Electrical properties of an AIlnN/GaN high-electron mobility transistor （HEMT） on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation cur...Electrical properties of an AIlnN/GaN high-electron mobility transistor （HEMT） on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AIInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.展开更多
As a powerful non-destructive and label-free detection technology,surface-enhanced Raman scattering(SERS)has been widely used in environmental-pollutant detection,biological-tissue sensing,molecular fingerprint analys...As a powerful non-destructive and label-free detection technology,surface-enhanced Raman scattering(SERS)has been widely used in environmental-pollutant detection,biological-tissue sensing,molecular fingerprint analysis and so on.Different from the traditional SERS substrates represented by noble metals and semiconductors,herein,we report a new highly sensitive SERS substrate material with high stability,biocompatibility,and low cost,namely nucleusfree two-dimensional electron gas(2DEG)Ti3C2 monolayer nanosheets.The highly crystalline monolayer Ti3C2 nanosheets with clean surface are synthesized by an improved chemical exfoliation and microwave heating method.The unique structure of nucleus-free-2DEG in Ti3C2 monolayer provides an ideal transport channel without nuclear scattering,which makes the highly crystalline monolayer Ti3C2 nanosheets achieve a Raman enhanced factor of 3.82×108 and a 10-11 level detection limit for typical environmental pollutants such as azo dyes,trichlorophenol,and bisphenol A.Singlemolecule imaging is also realized on the surface of the Ti3C2 monolayers,which may be the first time that approximate single-molecule imaging has been achieved on a non-noblemetal SERS substrates.Preliminary toxicological experiments show that the cytotoxicity of this material is very low.Considering the facile synthesis,high biocompatibility,low cost and high chemical stability of carbide nanosheets,these Ti3C2 monolayer nanosheets show significant promise for the design and fabrication of flexible SERS substrates for the sensing of trace substances with ultrahigh sensitivity.展开更多
We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation(MSBTE)for the two dimensional(2D)electron gas in double gate metal oxide semiconductor field effect transistors(MOSFE...We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation(MSBTE)for the two dimensional(2D)electron gas in double gate metal oxide semiconductor field effect transistors(MOSFETs)with flared out source/drain contacts.A realistic model with six-valleys of the conduction band of silicon and both intra-valley and inter-valley phonon-electron scattering is solved.We propose a second order finite volume method based on the positive and flux conservative(PFC)method to discretize the Boltzmann transport equations(BTEs).The transport part of the BTEs is split into two problems.One is a 1D transport problem in the position space,and the other is a 2D transport problem in the wavevector space.In order to reduce the splitting error,the 2D transport problem in the wavevector space is solved directly by using the PFC method instead of splitting into two 1D problems.The solver is applied to a nanoscale double gate MOSFET and the current-voltage characteristic is investigated.Comparison of the numerical results with ballistic solutions show that the scattering influence is not ignorable even when the size of a nanoscale semiconductor device goes to the scale of the electron mean free path.展开更多
文摘Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
基金the National Natural Science Foundation of China(Grant No.11104156)the Postdoctoral Science Foundation of China(Grant No.2012M510405)+1 种基金the Independent Research and Development Fund of Tsinghua University,China(Grant No.20121087948)the Beijing Key Lab of Fine Ceramics Opening Fund,China(Grant No.2012200110)
文摘We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors （the two-dimensional electron gas （2DEG））. It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.
文摘Marijuana use as well as abuse is a significant public health and public safety concern in the United States and using hair to identify marijuana users and abusers has been gaining acceptance in a number of venues including workplace, court ordered, and substance abuse treatment monitoring. After the presentation of a fully validated 2-dimensional gas chromatography-tandem mass spectrometry method for the detection of 11-nor-9-carboxy-Δ9-tetrahydrocannabinol (THCA), the chief metabolite of the main psychoactive compound in marijuana, Δ9-tetrahydrocannabinol (THC), we evaluated the usefulness of fingernail clippings as an alternative specimen type to hair by the analysis of a set of 60 matched pairs of head hair and fingernail clippings. The limit of detection was 10 fg/mg, the limit of quantitation was 20 fg/mg, and the assay was linear from 20 fg/mg to 500 fg/mg. The intra- and inter-assay imprecision and bias studies at 4 different concentrations (50, 100, 500, and 1000 fg/mg) were acceptable where all % Target observations were within 16% of their expected concentrations and all %CV calculations were less than 13.5%. THCA was detectable in more fingernail specimens (53.3%) than hair specimens (46.7%) and the mean concentrations in nails were on average 4.9 times higher than in hair (1813 fg/mg and 364 fg/mg, respectively). The THCA concentrations in hair and nail were strongly associated (r = 0.974, P < 0.01, n = 60) and the association was significant. The study demonstrated that fingernail clippings are a suitable alternative specimen type to hair to monitor for marijuana use and abuse.
基金supported by National Natural Science Foundation of China(No.51337006)。
文摘CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas mixtures with c-C4F8 and buffer gases N2 and CO2 by considering dielectric strength from electron transport parameters based on the Boltzmann method and synergistic effect analysis,compared with SF6 gas mixtures.The results confirm that the critical electric field strength of CF3I/c-C4F8/70%CO2 is greater than that of 30%SF6/70%CO2 when the CF3I content is greater than 17%.Moreover,a higher content of c-C4F8 decreases the sensitivity of gas mixtures to an electric field,and this phenomenon is more obvious in CF3I/c-C4F8/CO2 gas mixtures.The synergistic effects for CF3I/c-C4F8/70%N2 were most obvious when the c-C4F8 content was approximately 20%,and for CF3I/c-C4F8/70%CO2 when the c-C4F8 content was approximately 10%.On the basis of this research,CF3I/c-C4F8/70%N2 shows better insulation performance when the c-C4F8 content is in the15%–20%range.For CF3I/c-C4F8/70%CO2,when the c-C4F8 content is in the 10%–15%range,the gas mixtures have excellent performance.Hence,these gas systems might be used as alternative gas mixtures to SF6 in high-voltage equipment.
基金supported by the National Key Technologies R & D Program of China during the 14th Five-Year Plan period (No. 2021YFD1700904)Henan Provincial Important Project (No. 221100320200)+1 种基金State Key Laboratory of Wheat and Maize Crap Science (No. SKL2023ZZ09)the Henan Center for Outstanding Overseas Scientists (No. GZS2021007)。
文摘Electronic nose(eNose) is a modern bioelectronic sensor for monitoring biological processes that convert CO_(2) into valueadded products, such as products formed during photosynthesis and microbial fermentation. eNose technology uses an array of sensors to detect and quantify gases, including CO_(2), in the air. This study briefly introduces the concept of eNose technology and potential applications thereof in monitoring CO_(2) conversion processes. It also provides background information on biological CO_(2) conversion processes. Furthermore, the working principles of eNose technology vis-à-vis gas detection are discussed along with its advantages and limitations versus traditional monitoring methods. This study also provides case studies that have used this technology for monitoring biological CO_(2) conversion processes. eNose-predicted measurements were observed to be completely aligned with biological parameters for R~2 values of 0.864, 0.808, 0.802, and 0.948. We test eNose technology in a variety of biological settings, such as algae farms or bioreactors, to determine its effectiveness in monitoring CO_(2) conversion processes. We also explore the potential benefits of employing this technology vis-à-vis monitoring biological CO_(2) conversion processes, such as increased reaction efficiency and reduced costs versus traditional monitoring methods. Moreover, future directions and challenges of using this technology in CO_(2) capture and conversion have been discussed. Overall, we believe this study would contribute to developing new and innovative methods for monitoring biological CO_(2) conversion processes and mitigating climate change.
基金the National Natural Science Foun-dation of China(Grant Nos.12020101005,11975067,and 12347131)the Fundamental Research Funds for the Cen-tral Universities(Grant No.DUT24BS069).
文摘Simulations are conducted on capacitively coupled Ar/O_(2)mixed gas discharges employing a one-dimensional fluid coupled with an electron Monte Carlo(MC)model.The research explores the impact of different O_(2)ratio and pressures on the discharge characteristics of Ar/O_(2)plasma.At a fixed Ar/O_(2)gas ratio,with the increasing pressure,higher ion densities,as well as a slight increase in electron density in the bulk region can be observed.The discharge remains dominated by the drift-ambipolar(DA)mode,and the flux of O(3P)at the electrode increases with the increasing pressure due to higher background gas density,while the fluxes of O(1D)and Ardecrease due to the pronounced loss rate.With the increasing proportion of O_(2),a change in the dominant discharge mode from a mode to DA mode can be detected,and the O_(2)-associated charged particle densities are significantly increased.However,Ar+density shows a trend of increasing and then decreasing,while for neutral fluxes at the electrode,Arflux decreases,and O(3P)flux increases with the reduced Ar gas proportion,while trends in O(1D)flux show slight differences.The evolution of the densities of the charged particle and the neutral fluxes under different discharge parameters are discussed in detail using the ionization characteristics as well as the transport properties.Hopefully,more comprehensive understanding of Ar/O_(2)discharge characteristics in this work will provide a valuable reference for the industry.
文摘In the present paper,the electron beam irradiation was used to improve gas sensing properties of ZnGa_2O_4 gas sensors.The effects of electron beam irradiation on the performance of ZnGa_2O_4 gas sensors were reported.Results show that the sensitivity of ZnGa_2O_4 gas sensors to various gases increased after electron beam irradiation,and the optimal working temperature decreased.The effect of irradiation dose and the reaction mechanism were discussed.
基金supported in part by the Grainger Center for Electric Machinery and Electromechanics of the University of Illinois
文摘We theoretically present the intrinsic limits to electron mobility in the modulation-doped AIGaN/GaN two-dimensional electron gas （2DEG） due to effects including acoustic deformation potential （DP） scattering, piezoelectric scattering （PE）, and polar-optic phonon scattering （POP）. We find that DE and PE are the more significant limiting factors at intermediate temperatures of 40 K to 250 K, while POP becomes dominant as room temperature is approached. Detailed numerical results are presented for the change of electron mobility with respect to temperature and carrier density. We conclude that these three types of phonon scattering, which are generally determined by the material properties but not the technical processing, are hard limits to the 2DEG mobility.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076)
文摘In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.
基金supported by the National Basic Research Program of China(Grant No.2013CB632506)the National Natural Science Foundation of China(Grant Nos.11374186,51231007,51202132,and 51102153)the Independent Innovation Foundation of Shandong University,China(Grant No.2012TS027)
文摘The first-principles calculations are employed to investigate the electrical properties of polar MgO/BaTiO3（110）interfaces. Both n-type and p-type polar interfaces show a two-dimensional metallic behavior. For the n-type polar interface,the interface Ti3d electrons are the origin of the metallic and magnetic properties. Varying the thickness of Ba TiO3 may induce an insulator–metal transition, and the critical thickness is 4 unit cells. For the p-type polar interface, holes preferentially occupy the interface O 2p y state, resulting in a conducting interface. The unbalance of the spin splitting of the O 2p states in the interface Mg O layer leads to a magnetic moment of about 0.25μB per O atom at the interface.These results further demonstrate that other polar interfaces, besides LaAlO3/SrTiO3, can show a two-dimensional metallic behavior. It is helpful to fully understand the role of polar discontinuity on the properties of the interface, which widens the field of polar-nonpolar interfaces.
文摘Consequences of an exceedingly strong electric field (E field) on the ground state energetics and transport properties of a 2D spinless electron gas in a perpendicular magnetic field (a Quantum Hall Effect (QHE) configuration) are investigated to all orders in the fields. For a conventional semiconductor, we find fractional values of the Hall conductivity and some magnetoelectric coefficients for certain values of E and B fields that do not result from interactions or impurities, but are a pure consequence of a strong enough in-plane E field. We also determine analytically the ground state energy, and response properties such as magnetization and polarization as functions of the electromagnetic field in the strong E field limit. In the case of Graphene, we obtain more complex behaviors leading to the possibility of irrational Hall values. The results are also qualitatively discussed in connection to various mechanisms for the QHE-breakdown.
基金supported by National Natural Science Foundation of China(No.10875093)
文摘We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field strengths are decided by a balance of electron generation and loss based on chemical reactions estimated by the electron energy distribution function （EEDF）, which employs the Boltzmann equation method with two-term expanding approximation in the steady-state Townsend （SST） condition. During the insulation recovery phase, the hot CF3I/CO2 gas mixtures have maximum dielectric strength at a temperature of about 1500 K. At room temperature 300 K, the electric strength after arc extinction （90.3 Td, 1 Td=10-21 V.m2） is only 38% of the original value before arc （234.9 Td）. The adverse insulation recovery ability of CF3I/CO2 gas mixtures in arc extinction hinders its application in electric circuit breakers and other switchgears as an arc quenching and insulating medium.
基金This work is supported by the National Key Research and Development Program of China(Nos.2017YFA0303600 and 2020YFA0308800)the National Natural Science Foundation of China(Nos.11974364,11674367,U2032207,92163206,11974045,and 61725107)+2 种基金the Natural Science Foundation of Zhejiang,China(No.LZ18A040002)the Ningbo Science and Technology Bureau(No.2018B10060)S.L.H.would like also to acknowledge the Ningbo 3315 program.
文摘Two-dimensional(2D)honeycomb-like materials have been widely studied due to their fascinating properties.In particular,2D honeycomb-like transition metal monolayers,which are good 2D ferromagnet candidates,have attracted intense research interest.The honeycomb-like structure of hafnium,hafnene,has been successfully fabricated on the Ir(111)substrate.However,its electronic structure has not yet been directly elucidated.Here,we report the electronic structure of hafnene grown on the Ir(111)substrate using angle-resolved photoemission spectroscopy(ARPES).Our results indicate that the presence of spin-orbit coupling and Hubbard interaction suppresses the earlier predicted Dirac cones at the K points of the Brillouin zone.The observed band structure of hafnene near the Fermi level is very simple:an electron pocket centered at theΓpoint of the Brillouin zone.This electron pocket shows typical parabolic dispersion,and its estimated electron effective mass and electron density are approximately 1.8_(me)and 7×10^(14)cm^(-2),respectively.Our results demonstrate the existence of 2D electron gas in hafnene grown on the Ir(111)substrate and therefore provide key information for potential hafnene-based device applications.
基金supported by the National Natural Science Foundation of China(Nos.21903007,22072006,and 22275022)Young Thousand Talents Program(No.110532103)+2 种基金Beijing Normal University Startup funding(No.312232102)Beijing Municipal Science&Technology Commission(No.Z191100000819002)the Fundamental Research Funds for the Central Universities(No.310421109).
文摘Tattoo electronics has attracted intensive interest in recent years due to its comfortable wearing and imperceivable sensing,and has been broadly applied in wearable healthcare and human-machine interface.However,the tattoo electrodes are mostly composed of metal films and conductive polymers.Two-dimensional(2D)materials,which are superior in conductivity and stability,are barely studied for electronic tattoos.Herein,we reported a novel electronic tattoo based on large-area Mo_(2)C film grown by chemical vapor deposition(CVD),and applied it to accurately and imperceivably acquire on-body electrophysiological signals and interface with robotics.High-quality Mo_(2)C film was obtained via optimizing the distribution of gas flow during CVD growth.According to the finite element simulation(FES),bottom surface of Cu foil covers more stable gas flow than the top surface,thus leading to more uniform Mo_(2)C film.The resulting Mo_(2)C film was transferred onto tattoo paper,showing a total thickness of~3μm,sheet resistance of 60-150Ω/sq,and skin-electrode impedance of~5×10^(5)Ω.Such thin Mo_(2)C electronic tattoo(MCET in short)can form conformal contact with skin and accurately record electrophysiological signals,including electromyography(EMG),electrocardiogram(ECG),and electrooculogram(EOG).These body signals collected by MCET can not only reflect the health status but also be transformed to control the robotics for human-machine interface.
基金Project supported by the National Basic Research Program of China(Grant No.2013CB632506)the National Natural Science Foundation of China(Grant Nos.11374186,51231007,and 51202132)
文摘Density functional theory within the local density approximation is used to investigate the effect of the oxygen va- cancy on the LaGaO3/SrTiO3 （001） heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3rd layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO3 side. Compared with the heterojunction without introducing oxygen vacancy, the heterojunction with introducing the oxygen vacancy does not change the origin of the two-dimensional electron gas （2DEG）, that is, the 2DEG still originates from the dxy electrons, which are split from the t2g states of Ti atom at interface; however the oxygen vacancy is not beneficial to the confinement of the 2DEG. The extra electrons caused by the oxygen vacancy dominantly occupy the 3dx2-y2 orbitals of the Ti atom nearest to the oxygen vacancy, thus the density of carrier is enhanced by one order of magnitude due to the introduction of oxygen vacancy compared with the density of the ideal structure heterojunction.
基金Fundamental Research Funds for the Central Universities,Sun Yat-sen University,Grant/Award Number:22lgqb17National Natural Science Foundation of China,Grant/Award Number:61801525Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2020A1515010693。
文摘To date,development of high-performance,stretchable gas sensors operating at and below room temperature(RT)remains a challenge in terms of traditional sensing materials.Herein,we report on a high-performance NO_(2) gas sensor based on a self-healable,recyclable,ultrastretchable,and stable polyvinyl alcohol–cellulose nanofibril double-network organohydrogel,which features ultrahigh sensitivity(372%/ppm),low limit of detection(2.23 ppb),relatively fast response and recovery time(41/144 s for 250 ppb NO_(2)),good selectivity against interfering gases(NH3,CO_(2),ethanol,and acetone),excellent reversibility,repeatability,and long-term stability at RT or even at−20°C.In particular,this sensor shows outstanding stability against large deformations and mechanical damages so that it works normally after rapid self-healing or remolding after undergoing mechanical damage without significant performance degradation,which has major advantages compared to state-of-the-art gas sensors.The high NO_(2) sensitivity and selectivity are attributed to the selective redox reactions at the threephase interface of gas,gel,and electrode,which is even boosted by applying tensile strain.With a specific electrical circuit design,a wireless NO_(2) alarm system based on this sensor is created to enable continuous,real-time,and wireless NO_(2) detection to avoid the risk of exposure to NO_(2) higher than threshold concentrations.
基金Project supported by Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2019B010132001 and 2019B010132003)the Joint Funding of the National Natural Science Foundation of China(NSFC)&the Macao Science and Technology Development Fund(FDCT)of China(Grant No.62061160368)+1 种基金the National Key Research and Development Program of China(Grant Nos.2016YFB0400105 and 2017YFB0403001)the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics,Sun Yat-sen University,China(Grant No.20167612042080001).
文摘We report an abnormal phenomenon that the source-drain current(I_(D))of AlGaN/GaN heterostructure devices decreases under visible light irradiation.When the incident light wavelength is 390 nm,the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of ID.Based on the UV light irradiation,a decrease of I_(D) can still be observed when turning on the visible light.We speculate that this abnormal phenomenon is related to the surface barrier height,the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level.For visible light,its photon energy is less than the surface barrier height of the AlGaN layer.The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN.The electrons trapped in ionized donor-like surface states show a long relaxation time,and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas(2DEG)channel at AlGaN/GaN interface,which causes the decrease of ID.For the UV light,when its photon energy is larger than the surface barrier height of the AlGaN layer,electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly,which cause the increase of ID.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61204018)
文摘Electrical properties of an AIlnN/GaN high-electron mobility transistor （HEMT） on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AIInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.
基金support from the Science Foundation of Chinese Academy of Inspection and Quarantine(2019JK004)the National Key Research and Development Program of China(2017YFF0210003)the high performance computing center of Qufu Normal University。
文摘As a powerful non-destructive and label-free detection technology,surface-enhanced Raman scattering(SERS)has been widely used in environmental-pollutant detection,biological-tissue sensing,molecular fingerprint analysis and so on.Different from the traditional SERS substrates represented by noble metals and semiconductors,herein,we report a new highly sensitive SERS substrate material with high stability,biocompatibility,and low cost,namely nucleusfree two-dimensional electron gas(2DEG)Ti3C2 monolayer nanosheets.The highly crystalline monolayer Ti3C2 nanosheets with clean surface are synthesized by an improved chemical exfoliation and microwave heating method.The unique structure of nucleus-free-2DEG in Ti3C2 monolayer provides an ideal transport channel without nuclear scattering,which makes the highly crystalline monolayer Ti3C2 nanosheets achieve a Raman enhanced factor of 3.82×108 and a 10-11 level detection limit for typical environmental pollutants such as azo dyes,trichlorophenol,and bisphenol A.Singlemolecule imaging is also realized on the surface of the Ti3C2 monolayers,which may be the first time that approximate single-molecule imaging has been achieved on a non-noblemetal SERS substrates.Preliminary toxicological experiments show that the cytotoxicity of this material is very low.Considering the facile synthesis,high biocompatibility,low cost and high chemical stability of carbide nanosheets,these Ti3C2 monolayer nanosheets show significant promise for the design and fabrication of flexible SERS substrates for the sensing of trace substances with ultrahigh sensitivity.
基金supported by the NKBRP(Grants 2006CB302705,2005CB321704)the NSFC(Grants 10701005,11011130029)sponsored by SRF for ROCS,SEM.
文摘We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation(MSBTE)for the two dimensional(2D)electron gas in double gate metal oxide semiconductor field effect transistors(MOSFETs)with flared out source/drain contacts.A realistic model with six-valleys of the conduction band of silicon and both intra-valley and inter-valley phonon-electron scattering is solved.We propose a second order finite volume method based on the positive and flux conservative(PFC)method to discretize the Boltzmann transport equations(BTEs).The transport part of the BTEs is split into two problems.One is a 1D transport problem in the position space,and the other is a 2D transport problem in the wavevector space.In order to reduce the splitting error,the 2D transport problem in the wavevector space is solved directly by using the PFC method instead of splitting into two 1D problems.The solver is applied to a nanoscale double gate MOSFET and the current-voltage characteristic is investigated.Comparison of the numerical results with ballistic solutions show that the scattering influence is not ignorable even when the size of a nanoscale semiconductor device goes to the scale of the electron mean free path.
