Numerical simulation is employed to investigate the initial state of avalanche in polydisperse particle systems.Nucleation and propagation processes are illustrated for pentadisperse and triadisperse particle systems,...Numerical simulation is employed to investigate the initial state of avalanche in polydisperse particle systems.Nucleation and propagation processes are illustrated for pentadisperse and triadisperse particle systems,respectively.In these processes,particles involved in the avalanche grow slowly in the early stage and explosively in the later stage,which is clearly different from the continuous and steady growth trend in the monodisperse system.By examining the avalanche propagation,the number growth of particles involved in the avalanche and the slope of the number growth,the initial state can be divided into three stages:T1(nucleation stage),T2(propagation stage),T3(overall avalanche stage).We focus on the characteristics of the avalanche in the T2 stage,and find that propagation distances increase almost linearly in both axial and radial directions in polydisperse systems.We also consider the distribution characteristics of the average coordination number and average velocity for the moving particles.The results support that the polydisperse particle systems are more stable in the T2 stage.展开更多
Rock avalanches are generally difficult to prevent and control due to their high velocities and the extensive destruction they cause.However,barrier structures constructed along the path of a rock avalanche can partia...Rock avalanches are generally difficult to prevent and control due to their high velocities and the extensive destruction they cause.However,barrier structures constructed along the path of a rock avalanche can partially mitigate the magnitudes and consequences of such catastrophic events.We selected a rock avalanche in Nayong County,Guizhou Province,China as a case to study the effect of the location and height of a retaining wall on the dynamic characteristics of rock avalanche by using both actual terrain-based laboratory-model tests and coupled PFC3D-FLAC3D numerical simulations.Our findings demonstrate that a retaining wall can largely block a rock avalanche and its protective efficacy is significantly influenced by the integrity of the retaining wall.Coupled numerical simulation can serve as a powerful tool for analyzing the interaction between a rock avalanche and a retaining wall,facilitating precise observations of its deformation and destruction.The impact-curve characteristics of the retaining wall depend upon whether or not the rock avalanche-induced destruction is taken into account.The location of the retaining wall exerts a greater influence on the outcome compared to the height and materials of the retaining wall,while implementing a stepped retaining-wall pattern in accordance with the terrain demonstrates optimal efficacy in controlling rock avalanche.展开更多
In mountainous areas,snow avalanches could be triggered by the shaking produced by earthquakes.The forces induced by the earthquake can cause an irregular increase of shear strength load down the slope,for the presenc...In mountainous areas,snow avalanches could be triggered by the shaking produced by earthquakes.The forces induced by the earthquake can cause an irregular increase of shear strength load down the slope,for the presence of complex surface and buried morphologies.Topographic irregularities generate maximum effects of waves amplification linked to wavelengths comparable to the horizontal dimension of the topographic feature.For this reason,the selected time-histories represent an appropriate input for the two-dimensional numerical response analyses when a dynamic phenomenon produce the resonant motion of a whole mountain.This represents an important earthquake-induced hazard in snow-covered mountain areas with high probability of seismic events.Some valleys are located in regions with scare ground motion data and investments on infrastructures are not always accompanied by adequate protection against earthquake-induced avalanches.The paper points out a simple deterministic approach for selecting a set of real accelerograms applied to a real case of Siella Mountain(Central Italy)where a large avalanche destroying a tourist facility of Rigopiano resort on 18 January 2017.The selected time histories were used as input for the two-dimensional numerical model of the subsoil to evaluate the topographic seismic amplification in ridge and compare it with the results of other authors.These methods suggest that morphology-related inertial effects should be considered as an overload action on snow layers when controlling multi-hazard studies and spatial planning.展开更多
A massive rock and ice avalanche occurred on the western slope of the Ronti Gad valley in the northern part of Chamoli,Indian Himalaya,on 7 February 7,2021.The avalanche on the high mountain slope at an elevation of 5...A massive rock and ice avalanche occurred on the western slope of the Ronti Gad valley in the northern part of Chamoli,Indian Himalaya,on 7 February 7,2021.The avalanche on the high mountain slope at an elevation of 5600 m above sea level triggered a long runout disaster chain,including rock mass avalanche,debris avalanche,and flood.The disaster chain had a horizontal travel distance of larger than 17,600 m and an elevation difference of 4300 m.In this study,the disaster characteristics and dynamic process were analyzed by multitemporal satellite imagery.The results show that the massive rock and ice avalanche was caused by four large expanding discontinuity planes.The disaster chain was divided into five zones by satellite images and field observation,including source zone,transition zone,dynamic entrainment zone,flow deposition zone,and flood zone.The entrainment effect and melting water were recognized as the main causes of the long-runout distance.Based on the seismic wave records and field videos,the time progress of the disaster was analyzed and the velocity of frontal debris at different stages was calculated.The total analyzed disaster duration was 1247 s,and the frontal debris velocity colliding with the second hydropower station was approximately 23 m/s.This study also carried out the numerical simulation of the disaster by rapid mass movement simulation(RAMMS).The numerical results reproduced the dynamic process of the debris avalanche,and the mechanism of long-runout avalanche was further verified by parametric study.Furthermore,this study discussed the potential causes of disaster and flood and the roles of satellite images and seismic networks in the monitoring and early-warning.展开更多
This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(S...This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(SACM)with top-illuminated.Computational simulations demonstrate how edge breakdown effect is suppressed in the guardringfree structure.The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth(GB)product.The dark current is 3 nA at 0.9Vb r,and the unit responsivity is 0.4 A/W.The maximum3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55μm.展开更多
The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopt...The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopted for the device samples,which is much more practical and important for high-temperature applications.The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures.As the temperature increases from room temperature to 425 K,the dark current at 95%of the breakdown voltage increases slightly and remains lower than40 pA.In Geiger mode,our 4H-SiC APDs can be self-quenched in a passive-quenching circuit,which is expected for highspeed detection systems.Moreover,an interesting phenomenon is observed for the first time:the single-photon detection efficiency shows a non-monotonic variation as a function of temperature.The physical mechanism of the variation in hightemperature performance is further analyzed.The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.展开更多
This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage met...This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions,and the photocapacitance exhibits frequency-dependent characteristics.Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process,this study attributes the above results to the interfacial traps formed by Si-SiO_(2),and the illumination can effectively reduce the interfacial trap lifetime,leading to changes in the junction capacitance inside the SPAD.Accordingly,an equivalent circuit model considering the photocapacitance effect is also proposed in this paper.Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.展开更多
A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure...A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure TCAD physical model,which is revised by repeated comparison with the experimental data from the literature.Since both Ga_(2)O_(3)and diamond are ultra-wide bandgap semiconductor materials,the Ga_(2)O_(3)/diamond SAM-APD shows good solar-blind detection ability,and the corresponding cutoff wavelength is about 263 nm.The doping distribution and the electric field distribution of the SAM-APD are discussed,and the simulation results show that the gain of the designed device can reach 5×10^(4)and the peak responsivity can reach a value as high as 78 A/W.展开更多
Snow avalanches are a common natural hazard in many countries with seasonally snow-covered mountains.The avalanche hazard varies with snow avalanche type in different snow climate regions and at different times.The ab...Snow avalanches are a common natural hazard in many countries with seasonally snow-covered mountains.The avalanche hazard varies with snow avalanche type in different snow climate regions and at different times.The ability to understand the characteristics of avalanche activity and hazards of different snow avalanche types is a prerequisite for improving avalanche disaster management in the mid-altitude region of the Central Tianshan Mountains.In this study,we collected data related to avalanche,snowpack,and meteorology during four snow seasons(from 2015 to 2019),and analysed the characteristics and hazards of different types of avalanches.The snow climate of the mid-altitude region of the Central Tianshan Mountains was examined using a snow climate classification scheme,and the results showed that the mountain range has a continental snow climate.To quantify the hazards of different types of avalanches and describe their situation over time in the continental snow climate region,this study used the avalanche hazard degree to assess the hazards of four types of avalanches,i.e.,full-depth dry snow avalanches,full-depth wet snow avalanches,surface-layer dry snow avalanches,and surface-layer wet snow avalanches.The results indicated that surface-layer dry snow avalanches were characterized by large sizes and high release frequencies,which made them having the highest avalanche hazard degree in the Central Tianshan Mountains with a continental snow climate.The overall avalanche hazard showed a single peak pattern over time during the snow season,and the greatest hazard occurred in the second half of February when the snowpack was deep and the temperature increased.This study can help the disaster and emergency management departments rationally arrange avalanche relief resources and develop avalanche prevention strategies.展开更多
Analyzing large prehistoric rock avalanches provides significant data for evaluating the disaster posed by these relatively infrequent but destructive geological events. This paper attempts to study the characteristic...Analyzing large prehistoric rock avalanches provides significant data for evaluating the disaster posed by these relatively infrequent but destructive geological events. This paper attempts to study the characteristics and dynamics of the Ganqiuchi granitic rock avalanche, in the middle of the northern margin of Qinling Mountains, 30 km to the south of Xi’an, Shaanxi Province, China. In plane view, this rock avalanche is characterized by source area, accumulation area and dammed lake area. Based on previous studies, historical records and regional geological data, the major trigger of the Ganqiuchi rock avalanche is considered to be a strong paleo-earthquake with tremendous energy. The in situ deposit block size distributions of the intact rock mass and the debris deposits are presented and analyzed by using a simple model for estimating the number of fragmentation cycles that the blocks underwent. The results show that the primary controlling factor of the fragmentation process is the pre-existing fractures, and there is a relationship between the potential energy and the fragmentation energy: the latter is approximately 20% of the former. Based on the dynamic discrete element technique, the study proposes a four-stage model for the dynamic course of the Ganqiuchi rock avalanche:(1) failing;(2) highspeed sliding;(3) collision with obstacles;(4) decelerated sliding, which has implication for hazard assessment of the potential rock avalanches in China and other countries with similar geological setting.展开更多
4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high qu...4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.展开更多
This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added ...This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.展开更多
Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon...Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.展开更多
Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed struct...Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed structures and well-con-trolled operational conditions,the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche pro-cess and the growth quality of InGaAs/InP materials.It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present.In this paper,we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer.The quantum efficiency of this device reaches 83.2%.We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinus-oidal pulse gating.The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination,and the detection of small avalanche pulse amplitude signal is realized.The maximum detection efficiency is 55.4%with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96×10^(−17 )W/Hz^(1/2) at 247 K.Compared with other reported detectors,this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.展开更多
Fusion energy from protons reacting with ^(11) B,HB11,is extremely difficult or impossible when using thermal ignition by laser irradiation.This changes radically when using picosecond laser pulses with powers above p...Fusion energy from protons reacting with ^(11) B,HB11,is extremely difficult or impossible when using thermal ignition by laser irradiation.This changes radically when using picosecond laser pulses with powers above petawatts dominated by nonlinear force driven ultrahigh ac-celeration of plasma blocks for a non-thermal initiation of igniting solid density HB11 fuel.For a cylindrical trapping of the reaction,laser produced ultrahigh magnetic fields above kiloTesla,have to be combined.The experimentally confirmed highly increased HB11 fusion gains due to avalanche reaction may lead to a scheme of an environmentally clean and economic power reactor.展开更多
The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. ...The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.展开更多
Arrays of baffles are usually installed in front of protection site to attenuate the flow energy of rock avalanches in mountainous areas. Optimization design is crucial for efficiency promotion in hazard energy dissip...Arrays of baffles are usually installed in front of protection site to attenuate the flow energy of rock avalanches in mountainous areas. Optimization design is crucial for efficiency promotion in hazard energy dissipation engineering. In this study, a deceleration strip was added in the baffles protection system to optimize the traditional baffles system. The effects of the "baffles-deceleration strip" hybrid protection system was discussed in detail with the nails number and nails angle. This study presents details of numerical experiments using the discreteelement method(DEM). The effect of the optimization of hybrid protection system(nail angle and nail number) were investigated specifically, especially the impact force that avalanches exerted on structures. The results show that the maximum impact forces and kinetic energy of the rock avalanches decreases with the increase of the number and angle of the nail. Moreover, the distance between the toe and the bearing structure(L_m) is also a key factor. The shorter the distance L_m(30 m) is, the higher the maximum impact force are. The longer the distance L_m(70 m) is, the lower the maximum impact force are. Under the same size of the nails, increasing the numbers can enhance the dissipation ability of the hybrid protection system. Meanwhile, increasing itsangle can also enhance the dissipation ability. There are three key ways for nails attenuate rock avalanches:(i) block the fine particles directly;(ii) form the particles bridge between nails and baffles;(iii) dissipate the coarse particles energy directly. The effect of segregation in rock avalanches is crucial for the energy dissipation mechanism, which is a key factor to optimize the traditional baffle system.展开更多
We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is th...We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is that the p+nn-n+device possesses an additional middle-doped layer to separate the multiplication region from the absorption region.By properly controlling the electric field distribution in the p+nn-n+device,an electric field of 906 kV/cm has been achieved,which is 2.6 times higher than that in the p+n-n+device.At a reverse bias of-0.1 V at 77 K,both devices show a 100%cut-off wavelength of 2.25μm.The p+n-n+and p+nn-n+show a dark current density of 1.5×10^-7 A/cm^2 and 1.8×10^-8 A/cm^2,and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5μm,respectively.A maximum multiplication gain of 55 is achieved in the p+nn-n+device while the value is only less than 2 in the p+n-n+device.Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.展开更多
Supershort avalanche electron beam(SAEB)plays an important role in nanosecond-pulse discharges.This paper aims at reviewing ex-periments results on characteritics of SAEB and its spectra in different gases in nanoseco...Supershort avalanche electron beam(SAEB)plays an important role in nanosecond-pulse discharges.This paper aims at reviewing ex-periments results on characteritics of SAEB and its spectra in different gases in nanosecond-pulse discharges.All the joint experiments were carried in the Institute of High Current Electronics of the Russian Academy of Sciences and the Institute of Electrical Engineering of the Chinese Academy of Sciences.In these experiments,the generation of a SAEB in SF 6 in an inhomogeneous electric field was studied on three generators with pulse rise times of 0.3,0.5 and~2 ns.Firstly,the comparison of SAEB parameters in SF 6 with those obtained in other gases(air,nitrogen,argon,and krypton)is introduced.Secondly,the SAEB spectra in SF 6 and air at pressures of 10 kPa(75 torr),and 0.1 MPa(750 torr)are reviewed and discussed.Finally,1.5-D theoretical simulation of the supershort pulse of the fast electron beam in a coaxial diode filled with SF 6 at atmospheric pressure is described.The simulation was carried out in the framework of hybrid model for discharge and runaway electron kinetics.The above research progress can provide better understanding of the investigation into the mechanism of nanosecond-pulse discharges.展开更多
基金Project supported by the Qingdao National Laboratory for Marine Science and Technology(Grant No.2015ASKJ01)the National Natural Science Foundation of China(Grant Nos.11972212,12072200,and 12002213).
文摘Numerical simulation is employed to investigate the initial state of avalanche in polydisperse particle systems.Nucleation and propagation processes are illustrated for pentadisperse and triadisperse particle systems,respectively.In these processes,particles involved in the avalanche grow slowly in the early stage and explosively in the later stage,which is clearly different from the continuous and steady growth trend in the monodisperse system.By examining the avalanche propagation,the number growth of particles involved in the avalanche and the slope of the number growth,the initial state can be divided into three stages:T1(nucleation stage),T2(propagation stage),T3(overall avalanche stage).We focus on the characteristics of the avalanche in the T2 stage,and find that propagation distances increase almost linearly in both axial and radial directions in polydisperse systems.We also consider the distribution characteristics of the average coordination number and average velocity for the moving particles.The results support that the polydisperse particle systems are more stable in the T2 stage.
基金Hunan Provincial key Laboratory of key Technology on Hydropower Development Open Research Fund (PKLHD202203)
文摘Rock avalanches are generally difficult to prevent and control due to their high velocities and the extensive destruction they cause.However,barrier structures constructed along the path of a rock avalanche can partially mitigate the magnitudes and consequences of such catastrophic events.We selected a rock avalanche in Nayong County,Guizhou Province,China as a case to study the effect of the location and height of a retaining wall on the dynamic characteristics of rock avalanche by using both actual terrain-based laboratory-model tests and coupled PFC3D-FLAC3D numerical simulations.Our findings demonstrate that a retaining wall can largely block a rock avalanche and its protective efficacy is significantly influenced by the integrity of the retaining wall.Coupled numerical simulation can serve as a powerful tool for analyzing the interaction between a rock avalanche and a retaining wall,facilitating precise observations of its deformation and destruction.The impact-curve characteristics of the retaining wall depend upon whether or not the rock avalanche-induced destruction is taken into account.The location of the retaining wall exerts a greater influence on the outcome compared to the height and materials of the retaining wall,while implementing a stepped retaining-wall pattern in accordance with the terrain demonstrates optimal efficacy in controlling rock avalanche.
文摘In mountainous areas,snow avalanches could be triggered by the shaking produced by earthquakes.The forces induced by the earthquake can cause an irregular increase of shear strength load down the slope,for the presence of complex surface and buried morphologies.Topographic irregularities generate maximum effects of waves amplification linked to wavelengths comparable to the horizontal dimension of the topographic feature.For this reason,the selected time-histories represent an appropriate input for the two-dimensional numerical response analyses when a dynamic phenomenon produce the resonant motion of a whole mountain.This represents an important earthquake-induced hazard in snow-covered mountain areas with high probability of seismic events.Some valleys are located in regions with scare ground motion data and investments on infrastructures are not always accompanied by adequate protection against earthquake-induced avalanches.The paper points out a simple deterministic approach for selecting a set of real accelerograms applied to a real case of Siella Mountain(Central Italy)where a large avalanche destroying a tourist facility of Rigopiano resort on 18 January 2017.The selected time histories were used as input for the two-dimensional numerical model of the subsoil to evaluate the topographic seismic amplification in ridge and compare it with the results of other authors.These methods suggest that morphology-related inertial effects should be considered as an overload action on snow layers when controlling multi-hazard studies and spatial planning.
文摘A massive rock and ice avalanche occurred on the western slope of the Ronti Gad valley in the northern part of Chamoli,Indian Himalaya,on 7 February 7,2021.The avalanche on the high mountain slope at an elevation of 5600 m above sea level triggered a long runout disaster chain,including rock mass avalanche,debris avalanche,and flood.The disaster chain had a horizontal travel distance of larger than 17,600 m and an elevation difference of 4300 m.In this study,the disaster characteristics and dynamic process were analyzed by multitemporal satellite imagery.The results show that the massive rock and ice avalanche was caused by four large expanding discontinuity planes.The disaster chain was divided into five zones by satellite images and field observation,including source zone,transition zone,dynamic entrainment zone,flow deposition zone,and flood zone.The entrainment effect and melting water were recognized as the main causes of the long-runout distance.Based on the seismic wave records and field videos,the time progress of the disaster was analyzed and the velocity of frontal debris at different stages was calculated.The total analyzed disaster duration was 1247 s,and the frontal debris velocity colliding with the second hydropower station was approximately 23 m/s.This study also carried out the numerical simulation of the disaster by rapid mass movement simulation(RAMMS).The numerical results reproduced the dynamic process of the debris avalanche,and the mechanism of long-runout avalanche was further verified by parametric study.Furthermore,this study discussed the potential causes of disaster and flood and the roles of satellite images and seismic networks in the monitoring and early-warning.
基金the National Key R&D Program of China(Grant No.2020YFB1805701)the National Natural Foundation of China(Grant No.61934003)。
文摘This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(SACM)with top-illuminated.Computational simulations demonstrate how edge breakdown effect is suppressed in the guardringfree structure.The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth(GB)product.The dark current is 3 nA at 0.9Vb r,and the unit responsivity is 0.4 A/W.The maximum3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55μm.
基金the National Natural Science Foundation of China(Grant No.61974134)Hebei Province Outstanding Youth Fund(Grant No.F2021516001).
文摘The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopted for the device samples,which is much more practical and important for high-temperature applications.The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures.As the temperature increases from room temperature to 425 K,the dark current at 95%of the breakdown voltage increases slightly and remains lower than40 pA.In Geiger mode,our 4H-SiC APDs can be self-quenched in a passive-quenching circuit,which is expected for highspeed detection systems.Moreover,an interesting phenomenon is observed for the first time:the single-photon detection efficiency shows a non-monotonic variation as a function of temperature.The physical mechanism of the variation in hightemperature performance is further analyzed.The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62174052 and 61827812)Hunan Science and Technology Department Huxiang High-level Talent Gathering Project(Grant No.2019RS1037)+1 种基金Innovation Project of Science and Technology Department of Hunan Province(Grant No.2020GK2018)Postgraduate Scientific Research Innovation Project of Hunan Province(Grant No.QL20210131).
文摘This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions,and the photocapacitance exhibits frequency-dependent characteristics.Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process,this study attributes the above results to the interfacial traps formed by Si-SiO_(2),and the illumination can effectively reduce the interfacial trap lifetime,leading to changes in the junction capacitance inside the SPAD.Accordingly,an equivalent circuit model considering the photocapacitance effect is also proposed in this paper.Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3608602)the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009)the National Natural Science Foundation of China(Grant No.61927806)。
文摘A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure TCAD physical model,which is revised by repeated comparison with the experimental data from the literature.Since both Ga_(2)O_(3)and diamond are ultra-wide bandgap semiconductor materials,the Ga_(2)O_(3)/diamond SAM-APD shows good solar-blind detection ability,and the corresponding cutoff wavelength is about 263 nm.The doping distribution and the electric field distribution of the SAM-APD are discussed,and the simulation results show that the gain of the designed device can reach 5×10^(4)and the peak responsivity can reach a value as high as 78 A/W.
基金supported by the Open Project of the Xinjiang Uygur Autonomous Region Key Laboratory(2017D04010).
文摘Snow avalanches are a common natural hazard in many countries with seasonally snow-covered mountains.The avalanche hazard varies with snow avalanche type in different snow climate regions and at different times.The ability to understand the characteristics of avalanche activity and hazards of different snow avalanche types is a prerequisite for improving avalanche disaster management in the mid-altitude region of the Central Tianshan Mountains.In this study,we collected data related to avalanche,snowpack,and meteorology during four snow seasons(from 2015 to 2019),and analysed the characteristics and hazards of different types of avalanches.The snow climate of the mid-altitude region of the Central Tianshan Mountains was examined using a snow climate classification scheme,and the results showed that the mountain range has a continental snow climate.To quantify the hazards of different types of avalanches and describe their situation over time in the continental snow climate region,this study used the avalanche hazard degree to assess the hazards of four types of avalanches,i.e.,full-depth dry snow avalanches,full-depth wet snow avalanches,surface-layer dry snow avalanches,and surface-layer wet snow avalanches.The results indicated that surface-layer dry snow avalanches were characterized by large sizes and high release frequencies,which made them having the highest avalanche hazard degree in the Central Tianshan Mountains with a continental snow climate.The overall avalanche hazard showed a single peak pattern over time during the snow season,and the greatest hazard occurred in the second half of February when the snowpack was deep and the temperature increased.This study can help the disaster and emergency management departments rationally arrange avalanche relief resources and develop avalanche prevention strategies.
基金financially supported by the National Natural Science Foundation of China(grant numbers 4167020392)the State Key Laboratory Foundation of Geohazard Prevention and Geoenvironment Protection(SKLGP2018K015)the Geological Investigation Project fromChina Geological Survey(DD20160336)
文摘Analyzing large prehistoric rock avalanches provides significant data for evaluating the disaster posed by these relatively infrequent but destructive geological events. This paper attempts to study the characteristics and dynamics of the Ganqiuchi granitic rock avalanche, in the middle of the northern margin of Qinling Mountains, 30 km to the south of Xi’an, Shaanxi Province, China. In plane view, this rock avalanche is characterized by source area, accumulation area and dammed lake area. Based on previous studies, historical records and regional geological data, the major trigger of the Ganqiuchi rock avalanche is considered to be a strong paleo-earthquake with tremendous energy. The in situ deposit block size distributions of the intact rock mass and the debris deposits are presented and analyzed by using a simple model for estimating the number of fragmentation cycles that the blocks underwent. The results show that the primary controlling factor of the fragmentation process is the pre-existing fractures, and there is a relationship between the potential energy and the fragmentation energy: the latter is approximately 20% of the former. Based on the dynamic discrete element technique, the study proposes a four-stage model for the dynamic course of the Ganqiuchi rock avalanche:(1) failing;(2) highspeed sliding;(3) collision with obstacles;(4) decelerated sliding, which has implication for hazard assessment of the potential rock avalanches in China and other countries with similar geological setting.
基金supported in part by National Key R&D Program of China under Grant No. 2016YFB0400902in part by the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.
文摘This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.
文摘Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.
基金jointly supported by the National Key Research and Development Program of China (2019YFB22-05202)National Natural Science Foundation of China(61774152)
文摘Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed structures and well-con-trolled operational conditions,the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche pro-cess and the growth quality of InGaAs/InP materials.It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present.In this paper,we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer.The quantum efficiency of this device reaches 83.2%.We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinus-oidal pulse gating.The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination,and the detection of small avalanche pulse amplitude signal is realized.The maximum detection efficiency is 55.4%with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96×10^(−17 )W/Hz^(1/2) at 247 K.Compared with other reported detectors,this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.
文摘Fusion energy from protons reacting with ^(11) B,HB11,is extremely difficult or impossible when using thermal ignition by laser irradiation.This changes radically when using picosecond laser pulses with powers above petawatts dominated by nonlinear force driven ultrahigh ac-celeration of plasma blocks for a non-thermal initiation of igniting solid density HB11 fuel.For a cylindrical trapping of the reaction,laser produced ultrahigh magnetic fields above kiloTesla,have to be combined.The experimentally confirmed highly increased HB11 fusion gains due to avalanche reaction may lead to a scheme of an environmentally clean and economic power reactor.
基金supported by the National Natural Science Foundation of China(No.61404132)the Fundamental Research Funds for the Central Universities(Nos.lzujbky-2015-302,lzujbky-2017-171,and lzujbky-2016-119)
文摘The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.
基金supported by the Major Program of the National Natural Science Foundation of China(Grant No.41790433 Grant No.41772312+4 种基金 Grant No.41472325)the NSFC-ICIMOD Collaborative Project(Grant No.41661144041)Key Research and Development Projects of Sichuan Province(2017SZ0041)Scientific Research Foundation of Graduate School of Southeast University(YBJJ 1844)Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX17_0130)
文摘Arrays of baffles are usually installed in front of protection site to attenuate the flow energy of rock avalanches in mountainous areas. Optimization design is crucial for efficiency promotion in hazard energy dissipation engineering. In this study, a deceleration strip was added in the baffles protection system to optimize the traditional baffles system. The effects of the "baffles-deceleration strip" hybrid protection system was discussed in detail with the nails number and nails angle. This study presents details of numerical experiments using the discreteelement method(DEM). The effect of the optimization of hybrid protection system(nail angle and nail number) were investigated specifically, especially the impact force that avalanches exerted on structures. The results show that the maximum impact forces and kinetic energy of the rock avalanches decreases with the increase of the number and angle of the nail. Moreover, the distance between the toe and the bearing structure(L_m) is also a key factor. The shorter the distance L_m(30 m) is, the higher the maximum impact force are. The longer the distance L_m(70 m) is, the lower the maximum impact force are. Under the same size of the nails, increasing the numbers can enhance the dissipation ability of the hybrid protection system. Meanwhile, increasing itsangle can also enhance the dissipation ability. There are three key ways for nails attenuate rock avalanches:(i) block the fine particles directly;(ii) form the particles bridge between nails and baffles;(iii) dissipate the coarse particles energy directly. The effect of segregation in rock avalanches is crucial for the energy dissipation mechanism, which is a key factor to optimize the traditional baffle system.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874179,61804161,and 61975121)the National Key Research and Development Program of China(Grant No.2019YFB2203400).
文摘We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is that the p+nn-n+device possesses an additional middle-doped layer to separate the multiplication region from the absorption region.By properly controlling the electric field distribution in the p+nn-n+device,an electric field of 906 kV/cm has been achieved,which is 2.6 times higher than that in the p+n-n+device.At a reverse bias of-0.1 V at 77 K,both devices show a 100%cut-off wavelength of 2.25μm.The p+n-n+and p+nn-n+show a dark current density of 1.5×10^-7 A/cm^2 and 1.8×10^-8 A/cm^2,and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5μm,respectively.A maximum multiplication gain of 55 is achieved in the p+nn-n+device while the value is only less than 2 in the p+n-n+device.Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.
基金The work on the experimental setup#1 and#2 was sup-ported by grants RFBR#15-58-53031_ГФЕН_аThe work on the experimental setup#3 was supported by the National Natural Science Foundation of China under Contract#51511130040.
文摘Supershort avalanche electron beam(SAEB)plays an important role in nanosecond-pulse discharges.This paper aims at reviewing ex-periments results on characteritics of SAEB and its spectra in different gases in nanosecond-pulse discharges.All the joint experiments were carried in the Institute of High Current Electronics of the Russian Academy of Sciences and the Institute of Electrical Engineering of the Chinese Academy of Sciences.In these experiments,the generation of a SAEB in SF 6 in an inhomogeneous electric field was studied on three generators with pulse rise times of 0.3,0.5 and~2 ns.Firstly,the comparison of SAEB parameters in SF 6 with those obtained in other gases(air,nitrogen,argon,and krypton)is introduced.Secondly,the SAEB spectra in SF 6 and air at pressures of 10 kPa(75 torr),and 0.1 MPa(750 torr)are reviewed and discussed.Finally,1.5-D theoretical simulation of the supershort pulse of the fast electron beam in a coaxial diode filled with SF 6 at atmospheric pressure is described.The simulation was carried out in the framework of hybrid model for discharge and runaway electron kinetics.The above research progress can provide better understanding of the investigation into the mechanism of nanosecond-pulse discharges.
