Al/Ni reactive multilayer foil(RMF)possesses excellent comprehensive properties as a promising substitute for traditional Cu bridge.A theoretical resistivity model of Al/Ni RMF was developed to guide the optimization ...Al/Ni reactive multilayer foil(RMF)possesses excellent comprehensive properties as a promising substitute for traditional Cu bridge.A theoretical resistivity model of Al/Ni RMF was developed to guide the optimization of EFIs.Al/Ni RMF with different bilayer thicknesses and bridge dimensions were prepared by MEMS technology and electrical explosion tests were carried out.According to physical and chemical reactions in bridge,the electrical explosion process was divided into 5 stages:heating of condensed bridge,vaporization and diffusion of Al layers,intermetallic combination reaction,intrinsic explosion,ionization of metal gases,which are obviously shown in measured voltage curve.Effects of interface and grain boundary scattering on the resistivity of film metal were considered.Focusing on variations of substance and state,the resistivity was developed as a function of temperature at each stage.Electrical explosion curves were calculated by this model at different bilayer thicknesses,bridge dimensions and capacitor voltages,which showed an excellent agreement with experimental ones.展开更多
以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜...以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。展开更多
基金National Natural Science Foundation of China(Grant No.11872013)for supporting this project.
文摘Al/Ni reactive multilayer foil(RMF)possesses excellent comprehensive properties as a promising substitute for traditional Cu bridge.A theoretical resistivity model of Al/Ni RMF was developed to guide the optimization of EFIs.Al/Ni RMF with different bilayer thicknesses and bridge dimensions were prepared by MEMS technology and electrical explosion tests were carried out.According to physical and chemical reactions in bridge,the electrical explosion process was divided into 5 stages:heating of condensed bridge,vaporization and diffusion of Al layers,intermetallic combination reaction,intrinsic explosion,ionization of metal gases,which are obviously shown in measured voltage curve.Effects of interface and grain boundary scattering on the resistivity of film metal were considered.Focusing on variations of substance and state,the resistivity was developed as a function of temperature at each stage.Electrical explosion curves were calculated by this model at different bilayer thicknesses,bridge dimensions and capacitor voltages,which showed an excellent agreement with experimental ones.
文摘以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。
