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High quality AlGaN grown on a high temperature AlN template by MOCVD 被引量:1
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作者 闫建昌 王军喜 +3 位作者 刘乃鑫 刘喆 阮军 李晋闽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第10期13-16,共4页
A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spe... A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction(XRD)characterization both proved the high quality of the AlN template.The XRD(002)rocking curve full width at half maximum(FWHM)was about 53.7 arcsec and(102)FWHM was about 625 arcsec.The densities of screw threading dislocations(TDs)and edge TDs wereestimated to be - 6 × 10^6 cm^-2 and - 4.7 ×10^9 cm^-2. AlGaN of Al composition 80.2% was further grown on the AlN template. The RMS of the surface roughness was about 0.51 nm. XRD reciprocal space mapping was carried out to accurately determine the Al composition and relaxation status in the AlGaN epilayer. The XRD (002) rocking curve FWHM of the AIGaN epilayer was about 140 arcsec and (102) FWHM was about 537 arcsec. The density of screw TDs was estimated to be - 4 × 10^7 cm^-2 and that of edge TDs was - 3.3 × 10^9 cm^-2. These values all prove the high quality of the AlN template and AlGaN epilayer. 展开更多
关键词 aln template high temperature ALGAN MOCVD XRD
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Introducing voids around the interlayer of AlN by high temperature annealing 被引量:1
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作者 Jianwei Ben Jiangliu Luo +3 位作者 Zhichen Lin Xiaojuan Sun Xinke Liu Xiaohua Li 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第7期448-453,共6页
Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging.In this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic che... Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging.In this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition.Then,the AlN template was annealed at 1700℃for an hour to introduce the voids.It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer.Meanwhile,the dislocation density of the AlN template decreased from 5.26×10^(9)cm^(-2)to 5.10×10^(8)cm^(-2).This work provides a possible method to introduce voids into AlN layer at a designated height,which will benefit the design of AlN-based devices. 展开更多
关键词 aln template aln interlayer voids high-temperature annealing
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