AlxOy films by DC reactive magnetron sputtering were annealed in air ambient at 500 ℃for 1 h with different heating rates of 5,15,and 25 ℃/min.Then heat treatments at 900 ℃ were carried out on these 500 ℃-annealed...AlxOy films by DC reactive magnetron sputtering were annealed in air ambient at 500 ℃for 1 h with different heating rates of 5,15,and 25 ℃/min.Then heat treatments at 900 ℃ were carried out on these 500 ℃-annealed films to simulate the high-temperature application environment.Effects of the annealing heating rate on structure and properties of both 500 ℃-annealed and 900 ℃-heated films were investigated systematically.It was found that distinct γ-Al2O3 crystallization was observed in the 900 ℃-heated films only when the annealing heating rates are 15 and 25 ℃/min.The 500 ℃-annealed film possessed the most compact surface morphology in the case of 25 ℃/min.The highest microhardness of both 500 ℃-annealed and 900℃-heated films were obtained when the annealing heating rate was 15 ℃/min.展开更多
The interaction of oxide film with molten flux during aluminum brazing has been studied by means of X-ray powder diffraction. The following conclusions have been deduced: The swell- ing of aluminum oxide film is cause...The interaction of oxide film with molten flux during aluminum brazing has been studied by means of X-ray powder diffraction. The following conclusions have been deduced: The swell- ing of aluminum oxide film is caused by Li^+ inserting into the vacancies of octahedral or tetrahedral structure of 0 atom skeleton in у-Al_2O_3 . The strength of oxide film decreases as the crytallinity increases by the treating of flux containing LiF.展开更多
Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we ex...Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.展开更多
文摘AlxOy films by DC reactive magnetron sputtering were annealed in air ambient at 500 ℃for 1 h with different heating rates of 5,15,and 25 ℃/min.Then heat treatments at 900 ℃ were carried out on these 500 ℃-annealed films to simulate the high-temperature application environment.Effects of the annealing heating rate on structure and properties of both 500 ℃-annealed and 900 ℃-heated films were investigated systematically.It was found that distinct γ-Al2O3 crystallization was observed in the 900 ℃-heated films only when the annealing heating rates are 15 and 25 ℃/min.The 500 ℃-annealed film possessed the most compact surface morphology in the case of 25 ℃/min.The highest microhardness of both 500 ℃-annealed and 900℃-heated films were obtained when the annealing heating rate was 15 ℃/min.
文摘The interaction of oxide film with molten flux during aluminum brazing has been studied by means of X-ray powder diffraction. The following conclusions have been deduced: The swell- ing of aluminum oxide film is caused by Li^+ inserting into the vacancies of octahedral or tetrahedral structure of 0 atom skeleton in у-Al_2O_3 . The strength of oxide film decreases as the crytallinity increases by the treating of flux containing LiF.
基金Supported by the National Natural Science Foundation of China under Grant No 61574048the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2015B090901048the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172
文摘Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.
