The group V–VI semiconductor material getchellite (crystalline AsSbS_(3)) has garnered extensive attention due to itswonderful electronic and optical properties. The pressure engineering is one of the most effective ...The group V–VI semiconductor material getchellite (crystalline AsSbS_(3)) has garnered extensive attention due to itswonderful electronic and optical properties. The pressure engineering is one of the most effective methods to modulatecrystal structure and physical properties of semiconductor materials. In this study, the structural behavior, optical and electricalproperties of AsSbS_(3) under high pressure have been investigated systematically by in situ high-pressure experimentsfor the first time. The monoclinic structure of AsSbS_(3) remains stable up to 47.0 GPa without phase transition. The graduallattice contraction with increasing pressure results in a continuous narrowing of the bandgap then leads to pressure-inducedmetallization of AsSbS_(3) at 31.5 GPa. Our research presents a high-pressure strategy for tuning the crystal structure andphysical properties of AsSbS_(3) to expand its potential applications in electronic and optoelectronic fields.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.42274123)the Special Construction Project Fund for Shandong Provincial Taishan Scholars.
文摘The group V–VI semiconductor material getchellite (crystalline AsSbS_(3)) has garnered extensive attention due to itswonderful electronic and optical properties. The pressure engineering is one of the most effective methods to modulatecrystal structure and physical properties of semiconductor materials. In this study, the structural behavior, optical and electricalproperties of AsSbS_(3) under high pressure have been investigated systematically by in situ high-pressure experimentsfor the first time. The monoclinic structure of AsSbS_(3) remains stable up to 47.0 GPa without phase transition. The graduallattice contraction with increasing pressure results in a continuous narrowing of the bandgap then leads to pressure-inducedmetallization of AsSbS_(3) at 31.5 GPa. Our research presents a high-pressure strategy for tuning the crystal structure andphysical properties of AsSbS_(3) to expand its potential applications in electronic and optoelectronic fields.
