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高频电介质新材料Ba_2Ti_3Nb_4O_(18)陶瓷 被引量:5
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作者 童盛 凌志远 +1 位作者 郭栋 胡星 《电子元件与材料》 CAS CSCD 北大核心 2007年第7期42-45,共4页
采用氧化物固相反应法制备了理论密度达96、8%以上的Ba2Ti3Nb4O18高频电介质陶瓷。XRD和SEM分析表明:该陶瓷为两相混合结构,主晶相为单斜Ba2Ti3Nb4O18相,次晶相为六方Ba2Ti3Nb4O21相。1250℃/2h烧结瓷体Ba2Ti4Nb4O21相的体积分数为... 采用氧化物固相反应法制备了理论密度达96、8%以上的Ba2Ti3Nb4O18高频电介质陶瓷。XRD和SEM分析表明:该陶瓷为两相混合结构,主晶相为单斜Ba2Ti3Nb4O18相,次晶相为六方Ba2Ti3Nb4O21相。1250℃/2h烧结瓷体Ba2Ti4Nb4O21相的体积分数为5%-8%,1MHz下的介电性能为:εt约为38,tanδ约为1,6×10^-4,ac约为-8.51×10^-6/℃。 展开更多
关键词 无机非金属材料 高频电介质陶瓷 ba2ti3nb4o18 介电特性
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Low-Temperature Sintering and Microwave DielectricProperties of Ba_2Ti_3Nb_4O_(18) Ceramics
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作者 胡云香 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2011年第5期847-851,共5页
The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO ( 〈1 wt%) con... The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO ( 〈1 wt%) considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 ( 〈3.5 wt%) remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.Ba2Ti3Nb4O18 ceramics sintered at 1 050 ℃ for 4 h with the addition of 1.0 wt% CuO and 3.5 wt% H3BO3 exhibited good microwave dielectric properties:er=33.74,Q?f=13 812 GHz,and tf=-5.35 ppm/°C at about 5.0 GHz. 展开更多
关键词 ba2ti3nb4o18 ceramics microwave dielectric properties low-temperature sintering CuO and H3BO3 additions
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