To reduce the coercive field of Na_(0.5)Bi_(0.5)TiO_(3),Ba TiO_(3)were added as dopant materials.Then the(1-x)Na_(0.5)Bi_(0.5)TiO_(3)-xBaTiO_(3)ceramic samples were produced in solid synthetic way.The optimum preparat...To reduce the coercive field of Na_(0.5)Bi_(0.5)TiO_(3),Ba TiO_(3)were added as dopant materials.Then the(1-x)Na_(0.5)Bi_(0.5)TiO_(3)-xBaTiO_(3)ceramic samples were produced in solid synthetic way.The optimum preparation condition and piezoelectric properties of the samples were investigated.The XRD results show that the fabric transites from rhombohedral to tetragonal gradually with the substitution of the Ba^(2+).The morphotropic phase boundaries(MPB)exists in the composition range of 0.06.展开更多
用化学法制备了(1-xmol%)BaTiO_(3)-xmol%(Bi_(0.5)Na_(0.5))TiO_(3)(BBNTx,x=1,2,3,4,5)高温无铅正温度系数电阻(positive temperature coefficient of resistivity, PTCR)陶瓷。XRD表明所有的BBNTx陶瓷形成了单相的ABO_(3)四方钙钛矿...用化学法制备了(1-xmol%)BaTiO_(3)-xmol%(Bi_(0.5)Na_(0.5))TiO_(3)(BBNTx,x=1,2,3,4,5)高温无铅正温度系数电阻(positive temperature coefficient of resistivity, PTCR)陶瓷。XRD表明所有的BBNTx陶瓷形成了单相的ABO_(3)四方钙钛矿结构。电阻温度特性表明空气中烧结的所有BBNTx陶瓷都能够半导化,具有明显的PTC特性。其中0.2 mol%Y掺杂BBNT1陶瓷,室温电阻率大约为500Ω·cm,电阻突跳比(最大电阻/最小电阻)在2.7个数量级左右,电阻突变温度约130℃。材料的电阻突变温度会随着BNT的增加而略有增加。但BNT的增加会导致室温电阻率明显增大,并且PTC效应也会降低。BBNT5陶瓷的电阻突变温度能够增加到145℃左右,但室温电阻率超过105Ω·cm,电阻突跳只有1个数量级。展开更多
基金Funded by the National Natural Science Foundation of China (No.61704113)the Shenzhen Science and Technology Program (No.GJHZ20210705141805015)the Scientific Research Project in School-level (SZIIT2019KJ026)。
文摘To reduce the coercive field of Na_(0.5)Bi_(0.5)TiO_(3),Ba TiO_(3)were added as dopant materials.Then the(1-x)Na_(0.5)Bi_(0.5)TiO_(3)-xBaTiO_(3)ceramic samples were produced in solid synthetic way.The optimum preparation condition and piezoelectric properties of the samples were investigated.The XRD results show that the fabric transites from rhombohedral to tetragonal gradually with the substitution of the Ba^(2+).The morphotropic phase boundaries(MPB)exists in the composition range of 0.06.
文摘用化学法制备了(1-xmol%)BaTiO_(3)-xmol%(Bi_(0.5)Na_(0.5))TiO_(3)(BBNTx,x=1,2,3,4,5)高温无铅正温度系数电阻(positive temperature coefficient of resistivity, PTCR)陶瓷。XRD表明所有的BBNTx陶瓷形成了单相的ABO_(3)四方钙钛矿结构。电阻温度特性表明空气中烧结的所有BBNTx陶瓷都能够半导化,具有明显的PTC特性。其中0.2 mol%Y掺杂BBNT1陶瓷,室温电阻率大约为500Ω·cm,电阻突跳比(最大电阻/最小电阻)在2.7个数量级左右,电阻突变温度约130℃。材料的电阻突变温度会随着BNT的增加而略有增加。但BNT的增加会导致室温电阻率明显增大,并且PTC效应也会降低。BBNT5陶瓷的电阻突变温度能够增加到145℃左右,但室温电阻率超过105Ω·cm,电阻突跳只有1个数量级。
