A chemical vapour deposition (CVD) diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection ef...A chemical vapour deposition (CVD) diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo (MC) simulation result. Its plasma time for a pulse with 4.85×10 5 protons is 11.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10 13 cm -2 . All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.展开更多
A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radical...A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radicals on the growing surface in simulating the evolution of the morphology and microstructure. The calculation of configuration energy is used to determine the orientation of adsorbed growth radicals. The effect of processing variables such as nucleation density and substrate temperature on the morphology and microstructure is discussed. It is found that competitive characteristic and coarsening effect exist in the simulation results, which agree with the experimental observations.展开更多
Dynamic friction polishing (DFP) is one of the most promising methods appropriate for polishing CVD diamond film with high effciency and low cost. By this method CVD diamond film is polished through being simply press...Dynamic friction polishing (DFP) is one of the most promising methods appropriate for polishing CVD diamond film with high effciency and low cost. By this method CVD diamond film is polished through being simply pressed against a metal disc rotating at a high speed utilizing the thermochemical reaction occurring as a result of dynamic friction between them in the atmosphere. However, the relatively soft materials such as stainless steel, cast iron and nickel alloy widely used for polishing CVD diamond film are easy to wear and adhere to diamond film surface, which may further lead to low effciency and poor polishing quality. In this paper, FeNiCr matrix-TiC composite used as grinding wheel for polishing CVD diamond film was obtained by combination of mechanical alloying (MA) and spark plasma sintering (SPS). The process of ball milling, composition, density, hardness, high-temperature oxidation resistance and wear resistance of the sintered piece were analyzed. The results show that TiC was introduced in MA-SPS process and had good combination with FeNiCr matrix and even distribution in the matrix. The density of composite can be improved by mechanical alloying. The FeNiCr matrix-TiC composite obtained at 1273 K was found to be superior to at 1173 K sintering in hardness, high-temperature oxidation resistance and wearability. These properties are more favorable than SUS304 for the preparation of high-performance grinding wheel for polishing CVD diamond film.展开更多
Recently,with the rapid development of chemical vapor deposition(CVD)technology,large area free-standing CVD diamond films have been produced successfully.However,the coarse grain size on the surface and the non-unifo...Recently,with the rapid development of chemical vapor deposition(CVD)technology,large area free-standing CVD diamond films have been produced successfully.However,the coarse grain size on the surface and the non-uniform thickness of unprocessed CVD diamond films make it difficult to meet the application requirement.The current study evaluates several existing polishing methods for CVD diamond films,including mechanical polishing,chemical mechanical polishing and tribochemical polishing technology.展开更多
As a cutting tool,diamond films made by chemical vapor deposition(CVD) outperformed polycrystalline diamond(PCD) sintered under ultrahigh pressure.For example,the longevity of the CVD tools may be 2～5 times that of P...As a cutting tool,diamond films made by chemical vapor deposition(CVD) outperformed polycrystalline diamond(PCD) sintered under ultrahigh pressure.For example,the longevity of the CVD tools may be 2～5 times that of PCD inserts.In addition,the former cutting paths are strainghter with less chipping on the edge.However,there have been no report on CVD diamond films that were used as a roller scriber for splitting large glass panels.Our research demonstrated that the CVD diamond film could concentrate the energy in a smaller area(about 1/4),so the glass compressed by the tip of the diamond film was under a larger tensile stress in perpendicular to the direction of compression.The tensile stress then initiated the microcracks that were more in line with the direction of the compression. The reason that CVD diamond film could concentrate the compressive stress was due to its 100%diamond content.The high diamond content could allow the tip to be polished sharper.In contrast,the PCD cutting tip contained micro grains of cobalt that were softer than glass.As a result,the compressional stress was spreading out due to the larger area of contact.Consequently,the microcracks initiated at the PCD tip were random and they might not propagate along the direction of cutting.展开更多
The growth of {100} oriented CVD( Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) un...The growth of {100} oriented CVD( Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe's model are influenced intensively by temperature(Ts) and not evident bymass fraction Wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.展开更多
The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale,The results were compared both in Cl-conta...The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale,The results were compared both in Cl-containing systems and in C-H system as follows:(1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness;(2) Aomic Cl takes an active role for the growth of diamond film at low temperatues;(3){100}-oriented diamond film cannot deposit under single carbon insertion mechanism,which disagrees with the predictions before;(4) The explanation of the exact role of atomic Cl is not provided in the simulation results.展开更多
In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition(CVD) over a wide range of experimental parameters. The effects of the microwave power,CH_4/H_2...In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition(CVD) over a wide range of experimental parameters. The effects of the microwave power,CH_4/H_2 ratio and gas pressure on the morphology, growth rate, composition, and quality of diamond films were investigated by means of scanning electron microscope(SEM), X-ray diffraction(XRD), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS). A rise of microwave power can lead to an increasing pyrolysis of hydrogen and methane, so that the microcrystalline diamond film could be synthesized at low CH_4/H_2 levels. Gas pressure has similar effect in changing the morphology of diamond films, and high gas pressure also results in dramatically increased grain size. However,diamond film is deteriorated at high CH_4/H_2 ratio due to the abundant graphite content including in the films. Under an extreme condition of high microwave power of 10 kW and high CH_4 concentration, a hybrid film composed of diamond/graphite was successfully formed in the absence of N_2 or Ar,which is different from other reports. This composite structure has an excellent measured sheet resistance of 10-100 Ω/Sqr. which allows it to be utilized as field electron emitter. The diamond/graphite hybrid nanostructure displays excellent electron field emission(EFE) properties with a low turn-on field of 2.17 V/μm and β= 3160, therefore it could be a promising alternative in field emission applications.展开更多
The wide application of high pressure laminated (HPL) flooring has an insistent need for cutting tools with an excellent performance and fine cutting quality. Chemical vapor deposition (CVD) thick film diamond is a pr...The wide application of high pressure laminated (HPL) flooring has an insistent need for cutting tools with an excellent performance and fine cutting quality. Chemical vapor deposition (CVD) thick film diamond is a promising material for the machining of HPL flooring. In the present work, CVD thick film diamond tools were used to mill the wear resistance layer of HPL flooring. Wear volumes of flank face were examined by optical microscopy, and micro wear morphologies were observed by scanning electron microscopy (SEM). The experiments revealed that the predominant wear characteristics of CVD diamond tools were transgranular cleavage wear and intergranular peeling of the CVD diamond. Experimental results also showed that twin characteristic, cavity defect, micro crack and grain size of CVD thick film diamond contributed greatly to the wear process of CVD thick film diamond tools. The effects caused by the factors were also analyzed in detail in the paper.展开更多
Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition.Needle tip scraped lines were used to grow diamond films.Scanning elec...Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition.Needle tip scraped lines were used to grow diamond films.Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced.The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process.Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching,the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.展开更多
1.IntroductionRecently,progress of vapour phasegrowth of diamond fihn under non-equilib-rium reaction condition has shown theprospect of its commercial production in re-spect of effectiveness and economy.Theprocess pr...1.IntroductionRecently,progress of vapour phasegrowth of diamond fihn under non-equilib-rium reaction condition has shown theprospect of its commercial production in re-spect of effectiveness and economy.Theprocess proceeds in the展开更多
In this study, growth of mirror-like ultra-nanocrystalline diamond(UNCD) films by a facile hybrid CVD approach was presented. The nucleation and deposition of UNCD films were conducted in microwave plasma CVD(MPCVD) a...In this study, growth of mirror-like ultra-nanocrystalline diamond(UNCD) films by a facile hybrid CVD approach was presented. The nucleation and deposition of UNCD films were conducted in microwave plasma CVD(MPCVD) and direct current glow discharge CVD(DC GD CVD) on silicon substrates, respectively. A very high nucleation density(about 1?×?10^(11) nuclei cm^(-2)) was obtained after plasma pretreatment. Furthermore, large area mirrorlike UNCD films of Φ 50 mm were synthesized by DC GD CVD. The thickness and grain size of the UNCD films are 24 μm and 7.1 nm, respectively. In addition, the deposition mechanism of the UNCD films was discussed.展开更多
Large advancement has been made in understanding the nucleation and growth of chemical vapor deposition (CVD) diamond, but the adhesion of CVD diamond to substrates is poor and there is no good method for quantitative...Large advancement has been made in understanding the nucleation and growth of chemical vapor deposition (CVD) diamond, but the adhesion of CVD diamond to substrates is poor and there is no good method for quantitative evaluation of the adhesive strength. The blister test is a potentially powerful tool for characterizing the mechanical properties of diamond films. In this test, pressure was applied on a thin membrane and the out-of-plane deflection of the membrane center was measured. The Young’s modulus, residual stress, and adhesive strength were simultaneously determined using the load-deflection behavior of a membrane. The free-standing window sample of diamond thin films was fabricated by means of photolithography and anisotropic wet etching. The research indicates that the adhesive strength of diamond thin films is 4.28±0.37 J/m2. This method uses a simple apparatus, and the fabrication of samples is very easy.展开更多
Diamond films have been synthesized by means of LCVD through combined effects of a XeCl ultraviolet laser and an infrared CO2 laser. A special apparatus has been developed. The conditions of synthesis and the roles pl...Diamond films have been synthesized by means of LCVD through combined effects of a XeCl ultraviolet laser and an infrared CO2 laser. A special apparatus has been developed. The conditions of synthesis and the roles played by both lasers were studied. High-purity diamond films were deposited on Si substrates at 340℃.展开更多
With the relentless densification of interconnected circuitry dictated by Moore’ s Law,the CMP manufacture of such delicate wafers requires the significant reduction of polishing pressure of integrated circuits,not o...With the relentless densification of interconnected circuitry dictated by Moore’ s Law,the CMP manufacture of such delicate wafers requires the significant reduction of polishing pressure of integrated circuits,not only globally,but also locally on every tip of the pad asperities.Conventional diamond disks used for dressing the polyurethane pads cannot produce asperities to achieve such uniformity.A new design of diamond disk was fabricated by casting diamond film on a silicon wafer that contains patterned etching pits. This silicon mold was subsequently removed by dissolution in a hydroxide solution.The diamond film followed the profile of the etching pits on silicon to form pyramids of identical in size and shape.The variation of their tip heights was in microns of single digit that was about one order of magnitude smaller than conventional diamond disks for CMP production.Moreover,the diamond film contained no metal that might contaminate the circuits on polished wafer during a CMP operation.The continuous diamond film could resist any corrosive attack by slurry of acid or base.Consequently,in-situ dressing during CMP is possible that may improve wafer uniformity and production throughput.This ideal diamond disk(IDD) is designed for the future manufacture of advanced semiconductor chips with node sizes of 32 nm or smaller.展开更多
Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron micros...Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron microscope (SEM) and Raman spectrum. The influence of substrate temperature on the nucleation behavior of diamond was discussed in detail and the optimized deposition condition has been obtained.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No 10675074)
文摘A chemical vapour deposition (CVD) diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo (MC) simulation result. Its plasma time for a pulse with 4.85×10 5 protons is 11.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10 13 cm -2 . All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.
文摘A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radicals on the growing surface in simulating the evolution of the morphology and microstructure. The calculation of configuration energy is used to determine the orientation of adsorbed growth radicals. The effect of processing variables such as nucleation density and substrate temperature on the morphology and microstructure is discussed. It is found that competitive characteristic and coarsening effect exist in the simulation results, which agree with the experimental observations.
基金supported by the National Natural Science Foundation of China under grant No. 50575034.
文摘Dynamic friction polishing (DFP) is one of the most promising methods appropriate for polishing CVD diamond film with high effciency and low cost. By this method CVD diamond film is polished through being simply pressed against a metal disc rotating at a high speed utilizing the thermochemical reaction occurring as a result of dynamic friction between them in the atmosphere. However, the relatively soft materials such as stainless steel, cast iron and nickel alloy widely used for polishing CVD diamond film are easy to wear and adhere to diamond film surface, which may further lead to low effciency and poor polishing quality. In this paper, FeNiCr matrix-TiC composite used as grinding wheel for polishing CVD diamond film was obtained by combination of mechanical alloying (MA) and spark plasma sintering (SPS). The process of ball milling, composition, density, hardness, high-temperature oxidation resistance and wear resistance of the sintered piece were analyzed. The results show that TiC was introduced in MA-SPS process and had good combination with FeNiCr matrix and even distribution in the matrix. The density of composite can be improved by mechanical alloying. The FeNiCr matrix-TiC composite obtained at 1273 K was found to be superior to at 1173 K sintering in hardness, high-temperature oxidation resistance and wearability. These properties are more favorable than SUS304 for the preparation of high-performance grinding wheel for polishing CVD diamond film.
基金Science and technology plan project of Hebei Academy of Sciences(No.191408)Natural Science Foundation of Hebei Province(E2019302005)
文摘Recently,with the rapid development of chemical vapor deposition(CVD)technology,large area free-standing CVD diamond films have been produced successfully.However,the coarse grain size on the surface and the non-uniform thickness of unprocessed CVD diamond films make it difficult to meet the application requirement.The current study evaluates several existing polishing methods for CVD diamond films,including mechanical polishing,chemical mechanical polishing and tribochemical polishing technology.
文摘As a cutting tool,diamond films made by chemical vapor deposition(CVD) outperformed polycrystalline diamond(PCD) sintered under ultrahigh pressure.For example,the longevity of the CVD tools may be 2～5 times that of PCD inserts.In addition,the former cutting paths are strainghter with less chipping on the edge.However,there have been no report on CVD diamond films that were used as a roller scriber for splitting large glass panels.Our research demonstrated that the CVD diamond film could concentrate the energy in a smaller area(about 1/4),so the glass compressed by the tip of the diamond film was under a larger tensile stress in perpendicular to the direction of compression.The tensile stress then initiated the microcracks that were more in line with the direction of the compression. The reason that CVD diamond film could concentrate the compressive stress was due to its 100%diamond content.The high diamond content could allow the tip to be polished sharper.In contrast,the PCD cutting tip contained micro grains of cobalt that were softer than glass.As a result,the compressional stress was spreading out due to the larger area of contact.Consequently,the microcracks initiated at the PCD tip were random and they might not propagate along the direction of cutting.
基金[This work was financially supported by National Natural Science Founds of China (No. 59872003).]
文摘The growth of {100} oriented CVD( Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe's model are influenced intensively by temperature(Ts) and not evident bymass fraction Wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.
基金This project was supported by National Natural Science Foundation of China (No.59872003).]
文摘The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale,The results were compared both in Cl-containing systems and in C-H system as follows:(1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness;(2) Aomic Cl takes an active role for the growth of diamond film at low temperatues;(3){100}-oriented diamond film cannot deposit under single carbon insertion mechanism,which disagrees with the predictions before;(4) The explanation of the exact role of atomic Cl is not provided in the simulation results.
基金financial support from the Project supported by the National Natural Science Foundation of China(Grant No.51202257)Shenyang Double-Hundreds Project(Z17-7-027,Z18-0-025)
文摘In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition(CVD) over a wide range of experimental parameters. The effects of the microwave power,CH_4/H_2 ratio and gas pressure on the morphology, growth rate, composition, and quality of diamond films were investigated by means of scanning electron microscope(SEM), X-ray diffraction(XRD), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS). A rise of microwave power can lead to an increasing pyrolysis of hydrogen and methane, so that the microcrystalline diamond film could be synthesized at low CH_4/H_2 levels. Gas pressure has similar effect in changing the morphology of diamond films, and high gas pressure also results in dramatically increased grain size. However,diamond film is deteriorated at high CH_4/H_2 ratio due to the abundant graphite content including in the films. Under an extreme condition of high microwave power of 10 kW and high CH_4 concentration, a hybrid film composed of diamond/graphite was successfully formed in the absence of N_2 or Ar,which is different from other reports. This composite structure has an excellent measured sheet resistance of 10-100 Ω/Sqr. which allows it to be utilized as field electron emitter. The diamond/graphite hybrid nanostructure displays excellent electron field emission(EFE) properties with a low turn-on field of 2.17 V/μm and β= 3160, therefore it could be a promising alternative in field emission applications.
文摘The wide application of high pressure laminated (HPL) flooring has an insistent need for cutting tools with an excellent performance and fine cutting quality. Chemical vapor deposition (CVD) thick film diamond is a promising material for the machining of HPL flooring. In the present work, CVD thick film diamond tools were used to mill the wear resistance layer of HPL flooring. Wear volumes of flank face were examined by optical microscopy, and micro wear morphologies were observed by scanning electron microscopy (SEM). The experiments revealed that the predominant wear characteristics of CVD diamond tools were transgranular cleavage wear and intergranular peeling of the CVD diamond. Experimental results also showed that twin characteristic, cavity defect, micro crack and grain size of CVD thick film diamond contributed greatly to the wear process of CVD thick film diamond tools. The effects caused by the factors were also analyzed in detail in the paper.
基金the Key Project of Chinese Academy of Sciences Knowledge Innovation Program (Grant No.KJCX3.SYW.N10)
文摘Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition.Needle tip scraped lines were used to grow diamond films.Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced.The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process.Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching,the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.
文摘1.IntroductionRecently,progress of vapour phasegrowth of diamond fihn under non-equilib-rium reaction condition has shown theprospect of its commercial production in re-spect of effectiveness and economy.Theprocess proceeds in the
基金supported by the program of international S&T cooperation(Agreement No.S2015ZR1100)
文摘In this study, growth of mirror-like ultra-nanocrystalline diamond(UNCD) films by a facile hybrid CVD approach was presented. The nucleation and deposition of UNCD films were conducted in microwave plasma CVD(MPCVD) and direct current glow discharge CVD(DC GD CVD) on silicon substrates, respectively. A very high nucleation density(about 1?×?10^(11) nuclei cm^(-2)) was obtained after plasma pretreatment. Furthermore, large area mirrorlike UNCD films of Φ 50 mm were synthesized by DC GD CVD. The thickness and grain size of the UNCD films are 24 μm and 7.1 nm, respectively. In addition, the deposition mechanism of the UNCD films was discussed.
文摘Large advancement has been made in understanding the nucleation and growth of chemical vapor deposition (CVD) diamond, but the adhesion of CVD diamond to substrates is poor and there is no good method for quantitative evaluation of the adhesive strength. The blister test is a potentially powerful tool for characterizing the mechanical properties of diamond films. In this test, pressure was applied on a thin membrane and the out-of-plane deflection of the membrane center was measured. The Young’s modulus, residual stress, and adhesive strength were simultaneously determined using the load-deflection behavior of a membrane. The free-standing window sample of diamond thin films was fabricated by means of photolithography and anisotropic wet etching. The research indicates that the adhesive strength of diamond thin films is 4.28±0.37 J/m2. This method uses a simple apparatus, and the fabrication of samples is very easy.
文摘Diamond films have been synthesized by means of LCVD through combined effects of a XeCl ultraviolet laser and an infrared CO2 laser. A special apparatus has been developed. The conditions of synthesis and the roles played by both lasers were studied. High-purity diamond films were deposited on Si substrates at 340℃.
文摘With the relentless densification of interconnected circuitry dictated by Moore’ s Law,the CMP manufacture of such delicate wafers requires the significant reduction of polishing pressure of integrated circuits,not only globally,but also locally on every tip of the pad asperities.Conventional diamond disks used for dressing the polyurethane pads cannot produce asperities to achieve such uniformity.A new design of diamond disk was fabricated by casting diamond film on a silicon wafer that contains patterned etching pits. This silicon mold was subsequently removed by dissolution in a hydroxide solution.The diamond film followed the profile of the etching pits on silicon to form pyramids of identical in size and shape.The variation of their tip heights was in microns of single digit that was about one order of magnitude smaller than conventional diamond disks for CMP production.Moreover,the diamond film contained no metal that might contaminate the circuits on polished wafer during a CMP operation.The continuous diamond film could resist any corrosive attack by slurry of acid or base.Consequently,in-situ dressing during CMP is possible that may improve wafer uniformity and production throughput.This ideal diamond disk(IDD) is designed for the future manufacture of advanced semiconductor chips with node sizes of 32 nm or smaller.
文摘Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron microscope (SEM) and Raman spectrum. The influence of substrate temperature on the nucleation behavior of diamond was discussed in detail and the optimized deposition condition has been obtained.
