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超高密度磁记录介质的研究进展 被引量:2
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作者 成洪甫 高召顺 +1 位作者 王栋樑 李晓航 《材料导报》 EI CAS CSCD 北大核心 2010年第13期35-39,48,共6页
总结了近年来超高密度磁记录介质的研究概况,着重介绍了垂直磁记录介质中L10相FePt薄膜的研究方法,并认为L10相FePt薄膜将会成为高密度磁盘记录介质的主流。倾斜磁记录、热辅助磁记录、图案记录等存储技术,目前处于实验室研究阶段,但是... 总结了近年来超高密度磁记录介质的研究概况,着重介绍了垂直磁记录介质中L10相FePt薄膜的研究方法,并认为L10相FePt薄膜将会成为高密度磁盘记录介质的主流。倾斜磁记录、热辅助磁记录、图案记录等存储技术,目前处于实验室研究阶段,但是有望突破垂直磁记录的超顺磁极限,实现超高密度磁记录。 展开更多
关键词 co合金薄膜 L10相FePt薄膜 倾斜磁记录 热辅助磁记录 图案记录
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Effect of deposition parameters on micro-and nano-crystalline diamond films growth on WC-Co substrates by HFCVD 被引量:4
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作者 张建国 王新昶 +1 位作者 沈彬 孙方宏 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2014年第10期3181-3188,共8页
The characteristics of hot filament chemical vapor deposition(HFCVD) diamond films are significantly influenced by the deposition parameters, such as the substrate temperature, total pressure and carbon concentratio... The characteristics of hot filament chemical vapor deposition(HFCVD) diamond films are significantly influenced by the deposition parameters, such as the substrate temperature, total pressure and carbon concentration. Orthogonal experiments were introduced to study the comprehensive effects of such three parameters on diamond films deposited on WC-Co substrates. Field emission scanning electron microscopy, atomic force microscopy and Raman spectrum were employed to analyze the morphology, growth rate and composition of as-deposited diamond films. The morphology varies from pyramidal to cluster features with temperature decreasing. It is found that the low total pressure is suitable for nano-crystalline diamond films growth. Moreover, the substrate temperature and total pressure have combined influence on the growth rate of the diamond films. 展开更多
关键词 hot filament chemical vapor deposition(HFCVD) diamond films WC-Co substrates deposition parameters
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