In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of su...In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.展开更多
In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with t...In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.展开更多
Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our wo...Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.展开更多
光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高...光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高,主要原因是单个电极的效率太低.本文介绍了几种提高光电极分解水性能的方法—减小光生载流子的体相复合、表面复合以及抑制背反应等,同时综述了国内外关于几种p型半导体光阴极的研究进展,如Si、In P、Cu In1-xGaxS(Se)2、Cu2Zn Sn S4等.通过总结,作者提出一种p-Cu2Zn Sn S4(Cu In1-xGaxS(Se)2)/n-Ta3N5(Fe2O3)组装方式,有望获得高效低成本叠层光电化学水分解电池.展开更多
基金the DFG research training group GRK 1896 at Erlangen University and from the Joint Project Helmholtz-Institute Erlangen-Nürnberg(HI-ERN)for Renewable Energy Production under Project DBF01253,respectivelyfinancial support through the“Aufbruch Bayern”initiative of the state of Bavaria(EnCN and Solar Factory of the Future)and the“Solar Factory of the Future”with the Energy Campus Nürnberg(EnCN).
文摘In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.
基金supported by Korea Research Institute of Standards and Science(KRISS–2019–GP2019-0014)。
文摘In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
文摘Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.
文摘光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高,主要原因是单个电极的效率太低.本文介绍了几种提高光电极分解水性能的方法—减小光生载流子的体相复合、表面复合以及抑制背反应等,同时综述了国内外关于几种p型半导体光阴极的研究进展,如Si、In P、Cu In1-xGaxS(Se)2、Cu2Zn Sn S4等.通过总结,作者提出一种p-Cu2Zn Sn S4(Cu In1-xGaxS(Se)2)/n-Ta3N5(Fe2O3)组装方式,有望获得高效低成本叠层光电化学水分解电池.
