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Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes
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作者 Maojiu Luo Yourun Zhang +5 位作者 Yucheng Wang Hang Chen Rong Zhou Zhi Wang Chao Lu Bo Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第10期458-464,共7页
A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of ... A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices. 展开更多
关键词 4H-SiC JBS diode heavy ion irradiation single event effect single event leakage current degradation
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Suppressing Leakage Currents and Improving Performance of Indoor Organic Photovoltaic Devices
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作者 WANG Xiang GAO Jiaxin +2 位作者 LI Zheng WANG Ming TANG Zheng 《Journal of Donghua University(English Edition)》 CAS 2024年第4期388-397,共10页
Organic photovoltaic(OPV) devices hold great promise for indoor light harvesting,offering a theoretical upper limit of power conversion efficiency that surpasses that of other photovoltaic technologies.However,the pre... Organic photovoltaic(OPV) devices hold great promise for indoor light harvesting,offering a theoretical upper limit of power conversion efficiency that surpasses that of other photovoltaic technologies.However,the presence of high leakage currents in OPV devices commonly constrains their effective performance under indoor conditions.In this study,we identified that the origin of the high leakage currents in OPV devices lay in pinhole defects present within the active layer(AL).By integrating an automated spin-coating strategy with sequential deposition processes,we achieved the compactness of the AL and minimized the occurrence of pinhole defects therein.Experimental findings demonstrated that with an increase in the number of deposition cycles,the density of pinhole defects in the AL underwent a marked reduction.Consequently,the leakage current experienced a substantial decrease by several orders of magnitude which achieved through well-calibrated AL deposition procedures.This enabled a twofold enhancement in the power conversion efficiency(PCE) of the OPV devices under conditions of indoor illumination. 展开更多
关键词 organic photovoltaic(OPV) indoor light harvesting pinhole defect leakage current shunt resistance
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NiO/β-Ga_(2)O_(3)heterojunction diodes with ultra-low leakage current below 10^(-10)A and high thermostability
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作者 黄义 杨稳 +5 位作者 王琦 高升 陈伟中 唐孝生 张红升 刘斌 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期530-534,共5页
The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a h... The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a high breakdown voltage of 465 V,a specific on-resistance(Ron,sp)of 3.39 mΩ·cm^(2),and a turn-on voltage(V on)of 1.85 V,yielding a static Baliga's figure of merit(FOM)of 256 MW/cm^(2).Also,the HJDs have a low turn-on voltage,which reduces conduction loss dramatically,and a rectification ratio of up to 108.Meanwhile,the HJDs'reverse leakage current is essentially unaffected at temperatures below 170?C,and their leakage level may be controlled below 10^(-10)A.This indicates that p-NiO/β-Ga_(2)O_(3)HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performanceβ-Ga_(2)O_(3)power devices. 展开更多
关键词 NiO/β-Ga_(2)O_(3)p-n heterojunction diodes Baliga's figure of merit reverse leakage current β-Ga_(2)O_(3)power devices
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Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy
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作者 Dongfei Lu Guoqiang Xi +5 位作者 Hangren Li Jie Tu Xiuqiao Liu Xudong Liu Jianjun Tian Linxing Zhang 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2024年第10期2263-2273,共11页
BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric p... BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric properties.Herein,the sol-gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates,and the effects of the substitution of the elements Co,Cu,Mn(B-site)and Sm,Eu,La(A-site)on the crystal structure,ferroelectricity,and leakage current of the BFO-based thin films were invest-igated.Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films.Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure,while La is biased toward pseudo-tet-ragonal.Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180°can be realized through the prepared films.The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows:Cu>Co>Mn(B-site),Sm>La>Eu(A-site).The current density voltage curves indicated that the order for leakage contribution is as follows:Mn<Cu<Co(B-site),La<Eu<Sm(A-site).Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains,and the grain size distribution statistics proved that La element promotes the reduction of grain size,leading to the increase of grain boundaries and the reduction of leakage.Finally,a Bi_(0.985)Sm_(0.045)La_(0.03)Fe_(0.96)Co_(0.02)Cu_(0.02)O_(3)(SmLa-CoCu)thin film with a qualitative leap in the remnant polarization from 25.5(Bi_(0.985)Sm_(0.075)FeO_(3))to 98.8µC/cm^(2)(SmLa-CoCu)was prepared through the syner-gistic action of Sm,La,Co,and Cu elements.The leakage current is also drastically reduced from 160 to 8.4 mA/cm^(2)at a field strength of 150 kV/cm.Thus,based on the increasing entropy strategy of chemical engineering,this study focuses on enhancing ferroelectricity and decreasing leakage current,providing a promising path for the advancement of ferroelectric devices. 展开更多
关键词 increasing entropy SYNERGISTIC ferroelectric film remnant polarization leakage current
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Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage 被引量:1
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作者 Lijun Liu Chenyi Zhao +2 位作者 Li Ding Lianmao Peng Zhiyong Zhang 《Nano Research》 SCIE EI CAS CSCD 2020年第7期1875-1881,共7页
A small bandgap and light carrier effective mass(mo)lead to obv ous ambipolar transport behavior in carbon nanotube(CNT)fild-effect transistors(FE Ts),including a high off-state current and severe degradation of the s... A small bandgap and light carrier effective mass(mo)lead to obv ous ambipolar transport behavior in carbon nanotube(CNT)fild-effect transistors(FE Ts),including a high off-state current and severe degradation of the subthreshold swing(SS)with increasing drain bias voltage.We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μum channel length,i.e.,suppressing the ambipolar behavion while maintaining high on-state performance by adopting a feedback gate(FBG)structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current.Sub-400-nm-channel-length FETs with a FBG structure statistially present a high on/off ratio of up to 10*and a sub-200 mV/dec SS under a high drain bias of up to-2 V whle maintaining a high on-state current of 0.2 mA/μm or a peak transconductance of 0.2 mS/um.By lowering the supply voltage to 1.5 V,FBG CNT-fim FETs can meet the requirement of standard-pertormance ultra large scale integrated circuits(ULSICs).Therefore,the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property. 展开更多
关键词 carbon nanotube field-effect transistor current leakage subthreshold swing small bandgap semiconductor
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A Novel Multi-Functional Leakage Current Protector IC Design
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作者 韩雁 王泽 +1 位作者 俞宏 谢俊杰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第8期1537-1542,共6页
A novel type of leakage current protector chip,implemented in the mixed-signal 0.6μm CMOS process,is presented. This chip has the advantages of low power dissipation (10mW), accurate protection control based on dig... A novel type of leakage current protector chip,implemented in the mixed-signal 0.6μm CMOS process,is presented. This chip has the advantages of low power dissipation (10mW), accurate protection control based on digital response delay time and integration of multi-functions such as leakage current/over-voltage/over-load detection and protection,auto switch-on and so forth. Additionally, the chip is programmable to suit different three-level protection applications with a high anti-interference ability. 展开更多
关键词 leakage current protector IC design programmable IC
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Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET
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作者 张贺秋 许铭真 谭长华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第3期257-261,共5页
A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage stress.The experimental results show the stress induced leakage curre... A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage stress.The experimental results show the stress induced leakage current(SILC) includes two parts.One is due to the interface trap-assisted tunneling.The other is owing to the oxide trap-assisted tunneling. 展开更多
关键词 stress induce leakage current ULTRATHIN MOSFET TRAP
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The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses 被引量:1
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作者 王彦刚 许铭真 +2 位作者 谭长华 Zhang J. F 段小蓉 《Chinese Physics B》 SCIE EI CAS CSCD 2005年第9期1886-1891,共6页
The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation res... The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated. 展开更多
关键词 stress induced leakage current oxygen-related donor-like defects trap-assisted tunnelling ultra-thin gate oxide
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation 被引量:1
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作者 郑雪峰 范爽 +8 位作者 陈永和 康迪 张建坤 王冲 默江辉 李亮 马晓华 张进成 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第2期376-381,共6页
The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this p... The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping(2D-VRH) model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. 展开更多
关键词 AlGaN/GaN HEMTs reverse surface leakage current transport mechanism 2D-VRH
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Study of Leakage Current Behaviour on Artificially Polluted Surface of Ceramic Insulator 被引量:1
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作者 B.SubbaReddy G.R.Nagabhushana 《Plasma Science and Technology》 SCIE EI CAS CSCD 2003年第4期1921-1926,共6页
This paper presents the results of the study concerning to the leakagecurrent behaviour on artificially polluted ceramic insulator surface. From the present study it wasobserved that there is a reasonably well-defined... This paper presents the results of the study concerning to the leakagecurrent behaviour on artificially polluted ceramic insulator surface. From the present study it wasobserved that there is a reasonably well-defined inception of current i.e. scintillations at afinite voltage, The corresponding voltages for extinction of the current are in the range of 0.8 kVto 2.1 kV. Obviously, the dry band formed in the immediate vicinity of the pin prevents smoothcurrent flow as the voltage rises from zero. Only when the voltage is adequate it causes a flashoverof the dry band and current starts flowing. As is common in similar current extinction phenomena,here also, the extinction voltages are significantly lower than the inception voltages. Further, thevoltage-current curves invariably show hysteresis - the leakage currents are lower in the reducingportion of the voltage. This is obviously due to drying of the wet pollutant layer therebyincreasing its resistance. It is believed that this is the first time that such a directquantitative evidence of drying in individual half cycles is experimentally visualized. 展开更多
关键词 leakage current behaviour artificially polluted surface ceramic insulator
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Local leakage current behaviours of BiFeO_3 films 被引量:1
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作者 邹成 陈斌 +5 位作者 朱小健 左正笏 刘宜伟 陈远富 詹清峰 李润伟 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第11期493-498,共6页
The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathway... The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeOa films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films. 展开更多
关键词 polycrystalline BiFeO3 thin films local leakage current conductive atomic force microscopy
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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases 被引量:1
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作者 Yong Lei Jing Su +2 位作者 Hong-Yan Wu Cui-Hong Yang Wei-Feng Rao 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期403-405,共3页
In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage(I–V –T) characteristics of a Schottky barrier diode fabricated on free... In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage(I–V –T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained. 展开更多
关键词 homoepitaxial GaN Schottky contact leakage current tunneling dislocations ideality factor
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Modified model of gate leakage currents in AlGaN/GaN HEMTs
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作者 王元刚 冯志红 +4 位作者 吕元杰 谭鑫 敦少博 房玉龙 蔡树军 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第10期345-349,共5页
It has been reported that the gate leakage currents are described by the Frenkel-Poole emission(FPE) model,at temperatures higher than 250 K.However,the gate leakage currents of our passivated devices do not accord wi... It has been reported that the gate leakage currents are described by the Frenkel-Poole emission(FPE) model,at temperatures higher than 250 K.However,the gate leakage currents of our passivated devices do not accord with the FPE model.Therefore,a modified FPE model is developed in which an additional leakage current,besides the gate(ⅠⅡ),is added.Based on the samples with different passivations,the ⅠⅡcaused by a large number of surface traps is separated from total gate currents,and is found to be linear with respect to(φB-Vg)0.5.Compared with these from the FPE model,the calculated results from the modified model agree well with the Ig-Vgmeasurements at temperatures ranging from 295 K to 475 K. 展开更多
关键词 gate leakage currents FPE model additional leakage current surface traps
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The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes
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作者 戴峰 郑雪峰 +5 位作者 李培咸 侯晓慧 王颖哲 曹艳荣 马晓华 郝跃 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第11期92-95,共4页
The transport mechanisms of the reverse leakage current in the UV light-emitting diodes (380nm) are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms,... The transport mechanisms of the reverse leakage current in the UV light-emitting diodes (380nm) are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs. 展开更多
关键词 LEDS UV IS of The Transport Mechanisms of Reverse leakage current in Ultraviolet Light-Emitting Diodes INGAN in
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
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作者 王良吉 张书明 +6 位作者 朱继红 朱建军 赵德刚 刘宗顺 江德生 王玉田 杨辉 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第1期501-504,共4页
To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology o... To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes. 展开更多
关键词 GAN light emitting diode surface treatment leakage current
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Remarkable Improvement of Ferroelectric Properties and Leakage Current in BiFeO_3 Thin Films by Nd Modification
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作者 韩冬 王华 +2 位作者 XU Jiwen ZHANG Xiaowen YANG Ling 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2018年第1期64-67,共4页
Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped(x=0.05-0.20) BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface m... Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped(x=0.05-0.20) BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface morphology, leakage current, ferroelectric properties, and optical properties of BiFeO3-based thin films were investigated. The substitution of Nd^3+ ions for the Bi^3+ site converts the structure from rhombohedral to coexisting tetragonal and orthorhombic. Nd doping improves the crystallinity of BiFeO3 thin films. The leakage current of Nd-doped BiFeO3 decreases by two to three orders of magnitude compared with that of pure BiFeO3. Among the samples, 15% Nd-doped BiFeO3 exhibits the strongest ferroelectric polarization of 17.96 μC/cm^2. Furthermore, the absorption edges of Bi1-xNdxFeO3 thin films show a slight red-shift after Nd doping. 展开更多
关键词 BIFEO3 thin film FERROELECTRIC leakage current SOL-GEL
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Effect of SiN:H_x passivation layer on the reverse gate leakage current in GaN HEMTs
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作者 Sheng Zhang Ke Wei +9 位作者 Yang Xiao Xiao-Hua Ma Yi-Chuan Zhang Guo-Guo Liu Tian-Min Lei Ying-Kui Zheng Sen Huang Ning Wang Muhammad Asif Xin-Yu Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第9期540-544,共5页
This paper concentrates on the impact of SiN passivation layer deposited by plasma-enhanced chemical vapor deposition(PECVD) on the Schottky characteristics in GaN high electron mobility transistors(HEMTs). Three ... This paper concentrates on the impact of SiN passivation layer deposited by plasma-enhanced chemical vapor deposition(PECVD) on the Schottky characteristics in GaN high electron mobility transistors(HEMTs). Three types of SiN layers with different deposition conditions were deposited on GaN HEMTs. Atomic force microscope(AFM), capacitance-voltage(C-V), and Fourier transform infrared(FTIR) measurement were used to analyze the surface morphology, the electrical characterization, and the chemical bonding of SiN thin films, respectively. The better surface morphology was achieved from the device with lower gate leakage current. The fixed positive charge Qf was extracted from C-V curves of Al/SiN/Si structures and quite different density of trap states(in the order of magnitude of 1011-1012 cm^(-2)) was observed.It was found that the least trap states were in accordance with the lowest gate leakage current. Furthermore, the chemical bonds and the %H in Si-H and N-H were figured from FTIR measurement, demonstrating an increase in the density of Qf with the increasing %H in N-H. It reveals that the effect of SiN passivation can be improved in GaN-based HEMTs by modulating %H in Si-H and N-H, thus achieving a better Schottky characteristics. 展开更多
关键词 SiN passivation the gate leakage current QF FTIR
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Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_(0.18)Al_(0.82)N/GaN heterostructures
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作者 林芳 沈波 +3 位作者 卢励吾 许福军 刘新宇 魏珂 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第3期493-497,共5页
By using temperature-dependent current-voltage, variable-frequency capacitance-voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-ma... By using temperature-dependent current-voltage, variable-frequency capacitance-voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched Ino.18Alo.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magni- tude is observed after the thermal oxidation of the Ino.18Alo.82N/GaN heterostructures at 700 ℃. It is confirmed that the reverse leakage current is dominated by the Frenkel-Poole emission, and the main origin of the leakage current is the emis- sion of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAll-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAll-xN surface, which increases the electron emission barrier height. 展开更多
关键词 leakage current thermal oxidation Frenkel-Poole emission
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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al_(0.245)Ga_(0.755)N/GaN heterostructure and Ni/Au Schottky contact
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作者 刘芳 王涛 +6 位作者 沈波 黄森 林芳 马楠 许福军 王鹏 姚建铨 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第4期1614-1617,共4页
This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the tem... This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25 350℃. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer. 展开更多
关键词 gate leakage current interface states tunnelling current thermionic field emission current
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Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes
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作者 SUN Xinli GUO Hui +3 位作者 ZHANG Yuming GUO Bingjian LI Xingpeng CAO Zhen 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2021年第4期472-477,共6页
The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the elec... The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the electrical properties,anisotropic preferred etching by means of optical microscopy,Fourier transform infrared spectroscopy and transmission electron microscopy.It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration.Furtherly,we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode.It is shown that the oxygen precipitations present in an "S" curve with increasing initial oxygen concentration after high temperature diffusion.The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF),which are mainly dislocations,and a small amount of rod stacking faults.The density of B-OSF increases with the increasing initial oxygen concentration.The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode. 展开更多
关键词 oxygen concentration PIN rectifier diode induced defect reverse leakage current
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