A novel dual direction silicon-controlled rectifier(DDSCR)with an additional P-type doping and gate(APGDDSCR)is proposed and demonstrated.Compared with the conventional low-voltage trigger DDSCR(LVTDDSCR)that has posi...A novel dual direction silicon-controlled rectifier(DDSCR)with an additional P-type doping and gate(APGDDSCR)is proposed and demonstrated.Compared with the conventional low-voltage trigger DDSCR(LVTDDSCR)that has positive and negative holding voltages of 13.371 V and 14.038 V,respectively,the new DDSCR has high positive and negative holding voltages of 18.781 V and 18.912 V in a single finger device,respectively,and it exhibits suitable enough positive and negative holding voltages of 14.60 V and 14.319 V in a four-finger device for±12-V application.The failure current of APGDDSCR is almost the same as that of LVT-DDSCR in the single finger device,and the four-finger APGDDSCR can achieve positive and negative human-body model(HBM)protection capabilities of 22.281 kV and 23.45 kV,respectively,under 40-V voltage of core circuit failure,benefitting from the additional structure.The new structure can generate a snapback voltage on gate A to increase the current gain of the parasitic PNP in holding voltage.Thus,a sufficiently high holding voltage increased by the structure can ensure that a multi-finger device can also reach a sufficient holding voltage,it is equivalent to solving the non-uniform triggering problem of multi-finger device.The operating mechanism and the gate voltage are both discussed and verified in two-dimensional(2D)simulation and experiemnt.展开更多
A new dual directional silicon-controlled rectifier based electrostatic discharge (ESD) protection device suitable for 12-V applications is proposed in this paper. The proposed device (NPEMDDSCR) is based on the embed...A new dual directional silicon-controlled rectifier based electrostatic discharge (ESD) protection device suitable for 12-V applications is proposed in this paper. The proposed device (NPEMDDSCR) is based on the embedded DDSCR (EMDDSCR) structure, in which the P+ electrode and P+ injection are removed from the inner finger. Compared with the conventional modified DDSCR (MDDSCR), its high holding voltage meets the requirements for applications. Compared with the embedded DDSCR (EMDDSCR), it has good conduction uniformity. The MDDSCR, EMDDSCR, and NPEMDDSCR are fabricated with an identical width in a 0.5-μm CDMOS process. In order to verify and predict the characteristics of the proposed ESD protection device, a transmission line pulse (TLP) testing system and a two-dimensional device simulation platform are used in this work. The measurements demonstrate that the NPEMDDSCR provides improved reliability and higher area efficiency for 12 V or similar applications. The measurement results also show that the NPEMDDSCR provides higher robustness and better latch-up immunity capability.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774129,61827812,and 61704145)the Huxiang High-level Talent Gathering Project from the Hunan Science and Technology Department,China(Grant No.2019RS1037)the Changsha Science and Technology Plan Key Projects,China(Grant Nos.kq1801035 and kq1703001).
文摘A novel dual direction silicon-controlled rectifier(DDSCR)with an additional P-type doping and gate(APGDDSCR)is proposed and demonstrated.Compared with the conventional low-voltage trigger DDSCR(LVTDDSCR)that has positive and negative holding voltages of 13.371 V and 14.038 V,respectively,the new DDSCR has high positive and negative holding voltages of 18.781 V and 18.912 V in a single finger device,respectively,and it exhibits suitable enough positive and negative holding voltages of 14.60 V and 14.319 V in a four-finger device for±12-V application.The failure current of APGDDSCR is almost the same as that of LVT-DDSCR in the single finger device,and the four-finger APGDDSCR can achieve positive and negative human-body model(HBM)protection capabilities of 22.281 kV and 23.45 kV,respectively,under 40-V voltage of core circuit failure,benefitting from the additional structure.The new structure can generate a snapback voltage on gate A to increase the current gain of the parasitic PNP in holding voltage.Thus,a sufficiently high holding voltage increased by the structure can ensure that a multi-finger device can also reach a sufficient holding voltage,it is equivalent to solving the non-uniform triggering problem of multi-finger device.The operating mechanism and the gate voltage are both discussed and verified in two-dimensional(2D)simulation and experiemnt.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61704145,61774129,and 61827812)the Natural Science Foundation of Hunan Province,China(Grant No.2019JJ50609)the Key Technology Program of Changsha City,China(Grant No.kq1902042).
文摘A new dual directional silicon-controlled rectifier based electrostatic discharge (ESD) protection device suitable for 12-V applications is proposed in this paper. The proposed device (NPEMDDSCR) is based on the embedded DDSCR (EMDDSCR) structure, in which the P+ electrode and P+ injection are removed from the inner finger. Compared with the conventional modified DDSCR (MDDSCR), its high holding voltage meets the requirements for applications. Compared with the embedded DDSCR (EMDDSCR), it has good conduction uniformity. The MDDSCR, EMDDSCR, and NPEMDDSCR are fabricated with an identical width in a 0.5-μm CDMOS process. In order to verify and predict the characteristics of the proposed ESD protection device, a transmission line pulse (TLP) testing system and a two-dimensional device simulation platform are used in this work. The measurements demonstrate that the NPEMDDSCR provides improved reliability and higher area efficiency for 12 V or similar applications. The measurement results also show that the NPEMDDSCR provides higher robustness and better latch-up immunity capability.
