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Research on Silicon Carbide Dispersion-Reinforced Hypereutectic Aluminum-Silicon Electronic Packaging Materials
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作者 Ruixi Guo Yunhao Hua Tianze Jia 《Journal of Electronic Research and Application》 2024年第2期86-94,共9页
The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon elect... The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon electronic packaging materials to meet the needs of aviation,aerospace,and electronic packaging fields.We used the powder metallurgy method and high-temperature hot pressing technology to prepare SiC/Al-Si composite materials with different SiC contents(5vol%,10vol%,15vol%,and 20vol%).The results showed that as the SiC content increased,the tensile strength of the composite material first increased and then decreased.The tensile strength was the highest when the SiC content was 15%;the sintering temperature significantly affected the composite material’s structural density and mechanical properties.Findings indicated 700℃was the optimal sintering and the optimal SiC content of SiC/Al-Si composite materials was between 10%and 15%.Besides,the sintering temperature should be strictly controlled to improve the material’s structural density and mechanical properties. 展开更多
关键词 Silicon carbide electronic packaging materials Powder metallurgy Mechanical properties Composite materials
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Literature Review of Electronic Packaging Technology and Residual Stress
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作者 Wenji Ai Shanshui Zheng +1 位作者 Xianfeng Zeng Huibing Cheng 《Open Journal of Applied Sciences》 2023年第11期2172-2182,共11页
The rapid development of the electronic information industry brings to the irreplaceable role of electronic components, therefore the search of a more reliable packaging material has become increasingly important. In ... The rapid development of the electronic information industry brings to the irreplaceable role of electronic components, therefore the search of a more reliable packaging material has become increasingly important. In the electronic packaging system, the failure phenomenon caused by residual stress is one of the key factors restricting the development of electronic packaging technology. In order to use the in-situ characterization technology to explore the residual stress inducing mechanism and failure mechanism of epoxy-based advanced packaging materials, this paper gives a review of related previous research, and lays a theoretical foundation for the upcoming research. The classification and generation mechanism of residual stress are clarified in this paper, which provides data support for future related research. 展开更多
关键词 electronic packaging Material Residual Stress EPOXY Failure Mechanisms
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Al-50 wt%Si Alloy by Spark Plasma Sintering(SPS)for Electronic Packaging Materials 被引量:1
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作者 高冲 牛立斌 +5 位作者 MA Jun AN Yujiao HU Yuyang YANG Lei CHEN Guofang WANG Yannian 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2022年第3期500-506,共7页
A hypereutectic Al-50 wt%Si alloy for electronic packaging was prepared by spark plasma sintering(SPS)technology using gas-atomized Al-50 wt%Si powder.The effect of sintering parameters on alloy phase composition,micr... A hypereutectic Al-50 wt%Si alloy for electronic packaging was prepared by spark plasma sintering(SPS)technology using gas-atomized Al-50 wt%Si powder.The effect of sintering parameters on alloy phase composition,microstructure,thermal performance and the tensile strength at different temperatures was investigated.The experimental results show that the alloy can obey the diffraction peaks of silicon and aluminum without other peaks appearing.The primary silicon in the prepared alloy can be evenly distributed in the aluminum matrix.The coefficient of thermal expansion(CTE)and thermal conductivity(TC)of the alloy will improve with the increase of sintering temperature,but they will decrease after sintering for a long time,which is caused by the large difference of coefficient of thermal expansion between silicon and aluminum.The tensile properties of the alloy at room temperature will increase with the increase of sintering temperature,but higher test temperatures will inhibit the tensile properties except the elongation.The morphology and fracture mode of the tensile fracture are also analyzed to determine the good bonding strength of the alloy. 展开更多
关键词 Al-50 wt%Si spark plasma sintering electronic packaging mechanical properties
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A supersaturated Cu-Ag nanoalloy joint with ultrahigh shear strength and ultrafine nanoprecipitates for power electronic packaging
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作者 Wenwu Zhang Penghao Zhang +6 位作者 Dashi Lu Hao Pan Xiangli Liu Chengyan Xu Jun Wei Mingyu Li Hongjun Ji 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2023年第14期56-65,共10页
Ag-Cu bimetallic nanoalloy,integrating the advantages of reducing migration and cost of nano-Ag and alleviating oxidation of nano-Cu,is a prospective bonding material for power electronic packaging.The Ag-coated Cu na... Ag-Cu bimetallic nanoalloy,integrating the advantages of reducing migration and cost of nano-Ag and alleviating oxidation of nano-Cu,is a prospective bonding material for power electronic packaging.The Ag-coated Cu nanoparticles(Cu@Ag NPs)paste can execute bonding with high quality at 250℃,and the achieved supersaturated Ag-Cu nanoalloy joint with ultrahigh shear strength(152 MPa)dramatically exceeds most nano-paste joints.The interstitial solid solutions with atomic-level metallurgical bonds at the interface dominantly promoted the shear strength.Besides,the numerous ultrafine nanograin,high proportion of low angle grain boundaries(7.44%)without deformation,and the Cu nanoprecipitates in the joint would improve subordinately.Furthermore,the high content(16.8%)of∑3 twin boundaries would contribute to the electrical and thermal conductivity.Thus,the multiple strengthening mechanisms with the solid solution,the second precipitated phase,and ultrafine nanograin can dramatically enhance shear strength and electro-thermal conductivity of joints for high-temperature device packaging. 展开更多
关键词 Supersaturated Ag-Cu solid solution Cu nanoparticle precipitates Ultrafine nanograin Strengthening mechanism electronic packaging
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Advanced hermetic electronic packaging based on lightweight silicon/aluminum composite produced by powder metallurgy technique 被引量:5
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作者 Yan-Qiang Liu Jian-Zhong Fan +5 位作者 Xin-Xiang Hao Shao-Hua Wei Jun-Hui Nie Zi-Li Ma Ming-Kun Liu Ya-Bao Wang 《Rare Metals》 SCIE EI CAS CSCD 2020年第11期1307-1313,共7页
Silicon/aluminum(Si/Al)composite is a kind of lightweight electronic packaging material that received a lot of attention in the past 20 years.In this paper,a series of Si/Al composites with lowered coefficient of ther... Silicon/aluminum(Si/Al)composite is a kind of lightweight electronic packaging material that received a lot of attention in the past 20 years.In this paper,a series of Si/Al composites with lowered coefficient of thermal expansion(CTE)and high thermal conductivity were produced by powder metallurgy(PM).The Si/Al composites are fully dense and have fine Si particles uniquely distributed within pure Al matrix.Three 50%Si/Al composites were designed to have strength in the range of 185-290 MPa to meet different demands,while the other properties keep invariable.Fracture toughness of the composites is measured to be 9-10 MPa·m^(1/2).The composites were machined to 50%Si/Al housings and 27%Si/Al lids.Both the hermeticities of housings before and after laser-beam-welding sealing are determined.The measured leak rate of composites and sealed housings is in magnitude order of 1×10^(-10)and 1×10^(-9)Pa·m^(3)·s^(-1),respectively,suggesting high hermeticity.The good hermeticity is attributed to the full dense materials,good weldability,and extremely low weld porosity.The present Si/Al composites are expected to be extensively used in highly hermetic electronic packages. 展开更多
关键词 Si/Al composite electronic packaging STRENGTH Hermetic Powder metallurgy
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Discharge Characteristics of Bubbles at Interface Between AIN Ceramic and FC-72 Liquid
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作者 Shenyang Mo Xuebao Li +1 位作者 Zhibin Zhao Xiang Cui 《CSEE Journal of Power and Energy Systems》 SCIE EI CSCD 2024年第1期371-380,共10页
In order to evaluate the insulation of two-phase immersion cooling in the HV power electronic package,the insulation degradation of the dielectric interface induced by bubbles is investigated.In this paper,a test stra... In order to evaluate the insulation of two-phase immersion cooling in the HV power electronic package,the insulation degradation of the dielectric interface induced by bubbles is investigated.In this paper,a test strategy with 50 Hz unipolar DC and AC combined voltage for partial discharge(PD)at boiling interface of AlN ceramic is proposed.The insulation threshold of an AlN ceramic surface is acquired in several dielectric environments,such as air,FC-72 liquid(FC-72,a Fluorinert^(TM) from 3^(TM)),FC-72 vapor,and boiling state of FC72.This reveals the deterioration of boiling on the insulation of the surface immersed in the dielectric refrigerant.To investigate the mechanism of the PD feature at the boiling interface,the PD patterns of the unrestricted bubble and the accumulated bubble are acquired and contrastively analyzed.Combined with the feature of the back discharge and the bubble behavior,the charged vapor-ceramic interface is relatively stable due to the accumulated vapor layer.This stability of the charged vaporceramic interface is broken if the bubble is unrestricted.Besides,it is discovered that the vapor-liquid interface inside the bubble may be another charged interface,which can also trigger a back discharge. 展开更多
关键词 Biased AC voltage BUBBLE FC-72 partial discharge power electronic package surface discharge twophase cooling
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Conductive microsphere monolayers enabling highly conductive pressure-sensitive adhesive tapes for electromagnetic interference shielding
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作者 Xi Lu Jin-Ming He +5 位作者 Ya-Dong Xu Jian-Hong Wei Jian-Hui Li Hao-Hui Long You-Gen Hu Rong Sun 《Advances in Manufacturing》 SCIE EI CAS CSCD 2023年第2期212-221,共10页
Conductive adhesive tape is one kind of electromagnetic interference(EMI)shielding materials for electronic packaging.However,the inferior conductivity of the pressure-sensitive adhesive(PSA)layer results in serious e... Conductive adhesive tape is one kind of electromagnetic interference(EMI)shielding materials for electronic packaging.However,the inferior conductivity of the pressure-sensitive adhesive(PSA)layer results in serious electromagnetic leakage at the conjunctions between the conductive tapes and target objects.Adding conductive fillers is a traditional method for highly conductive adhesive tapes.However,the content of conductive fillers is needed to reach the percolation threshold,which is usually as high as tens of percent.High-content fillers result in significant loss of adhesive property and high fabrication cost.Herein,we introduce a rational architecture of conductive microsphere monolayer(CMM)in the PSA layer.The CMM connects the top and bottom surfaces of the PSA layer and improves its conductivity in the z-direction.Importantly,low contents of conductive microspheres(≤5%(mass fraction,w))can achieve the target of conductivity improvement,but not result in the serious loss of the adhesive property.Therefore,the strategy of CMMs can balance the tradeoff between the conductivity and the adhesive property of conductive PSA tapes.Finally,we demonstrate the superior EMI shielding performance of as-made conductive adhesive tapes,indicating their potential applications as the advanced EMI shielding materials in the electronic packaging. 展开更多
关键词 Microsphere monolayer Pressure-sensitive adhesive(PSA) Conductive tapes electronic packaging Electromagnetic interference(EMI)shielding
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On numerical investigation of nonuniformity in cooling characteristic for different materials of target surfaces being exposed to impingement of air jet
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作者 Siddique Mohd Umair Nitin Parashram Gulhane 《International Journal of Modeling, Simulation, and Scientific Computing》 EI 2017年第3期93-111,共19页
Heat transfer using air jet impingement technique is one of the conspicuous tasks in the looming world of electronic packaging system.Here,the material selection of heat sink becomes one of the prior and important ass... Heat transfer using air jet impingement technique is one of the conspicuous tasks in the looming world of electronic packaging system.Here,the material selection of heat sink becomes one of the prior and important assignments to construct a heat sink with desired characteristic cooling rate.In order to study the material effect of heat sink over the cooling characteristic,the present work takes an initiative in plotting the Nusselt magnitude over the radial distance for different material of heat sink.This is done by computing the flow regime and heat transfer characteristic of a 2D axis symmetric geometry in commercial simulating software,ANSYS CFX.The computation of cooling characteristic in form of Nusselt profile is done using SST+Gamma–theta turbulence model.Since the prediction of heat interaction due to the intermediacy and transition in the flow regime is a unique issue of this problem.The results for Nusselt curve signifies a tangible elevation in local Nusselt value(nonuniformity)with decrease in thermal diffusivity of target surface.Also the nonuniformity is observed to vanish above a critical range(66.76mm2/s)of thermal diffusivity.This happens due to presences of abnormal turbulence of heat flow which occurs inside the target surface.Since the variation in thermal diffusivity causes some imbalance competition between the heat storage and dissipation capabilities.Above all the target surface carrying thermal diffusivity less than 66.76mm2/s possesses a dominating heat storage capability,on behalf of which some heat transfer occurring in near jet and far jet regions are being restricted.These are transferred towards stagnation region in radial direction. 展开更多
关键词 electronic packaging thermal diffusivity Nusselt number heat sink air jet
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