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磁性隧道结Fe/MgO/Fe(001)的磁性及界面电子结构
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作者 童六牛 李泰 +2 位作者 夏爱林 胡锦莲 李赞揆 《金属学报》 SCIE EI CAS CSCD 北大核心 2007年第11期1166-1170,共5页
采用分子束外延技术在GaAs(001)-4×6衬底上外延出Fe/MgO/Fe(001)单晶磁性隧道结.原位表面磁光Kerr效应(SMOKE)测量表明:当外磁场沿[1(?)0]方向时,隧道结的SMOKE回线具有典型的双矫顽力特性.下电极Fe层的矫顽力(约为20mT)约是上电... 采用分子束外延技术在GaAs(001)-4×6衬底上外延出Fe/MgO/Fe(001)单晶磁性隧道结.原位表面磁光Kerr效应(SMOKE)测量表明:当外磁场沿[1(?)0]方向时,隧道结的SMOKE回线具有典型的双矫顽力特性.下电极Fe层的矫顽力(约为20mT)约是上电极Fe层矫顽力(约为1mT)的20倍.矫顽力的增强主要被归结为MgO/Fe(001)界面对下电极铁磁层的钉扎作用.自旋分辨的光电子能谱测量表明:在MgO覆盖到Fe(001)表面后,Fe(001)Fermi面的自旋极化率P由负值转变为正值.P值符号的改变被归结为MgO/Fe(001)界面电子自旋结构的改变. 展开更多
关键词 fe/mgo/fe 外延生长 磁性隧道结 矫顽力 自旋极化率
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Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction
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作者 YANG Fan BI Xiao-fang 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2006年第B12期151-155,共5页
The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of diffe... The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses: Fe(3)MgO(t)Fe(3) (t-=1,3,5,7) and with Fe of varied thicknesses: Fe(t)MgO(3)Fe(t) (t=3,4,5,6,7) were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The mag- netic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance (TMR) ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers. 展开更多
关键词 fe/mgo/fe electronic structure tunnel magnetoresistance thicknesses
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