An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper i...An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.展开更多
针对传统车载HID灯电子镇流器工作效率低的问题,提出并研究了一种新型车载HID灯电子镇流器准谐振拓扑。与传统车载HID灯电子镇流器拓扑相比,该新型车载HID灯电子镇流器准谐振拓扑的开关管工作于零电压导通(Zero Voltage switching,ZVS)...针对传统车载HID灯电子镇流器工作效率低的问题,提出并研究了一种新型车载HID灯电子镇流器准谐振拓扑。与传统车载HID灯电子镇流器拓扑相比,该新型车载HID灯电子镇流器准谐振拓扑的开关管工作于零电压导通(Zero Voltage switching,ZVS)状态,二极管工作于零电流关断(Zero Current switching,ZCS)状态,实现了高效率功率变换。同时,该新型车载HID灯电子镇流器准谐振拓扑能够快速响应负载变化,简化了DC-DC变换器设计。详细分析了这种新型车载HID灯电子镇流器准谐振拓扑的工作原理及关键参数的设计原则,最后通过实验验证了理论分析的正确性。展开更多
为解决HID灯的老化及灯的伏安特性变化引起的功率漂移问题,基于Buck降压变换器的平均电流控制模式,设计并制作了一款具有恒功率控制能力的数字控制电子镇流器驱动电路,包含两个控制环路:内电流环路用于维持稳定驱动,外功率环路用于维持...为解决HID灯的老化及灯的伏安特性变化引起的功率漂移问题,基于Buck降压变换器的平均电流控制模式,设计并制作了一款具有恒功率控制能力的数字控制电子镇流器驱动电路,包含两个控制环路:内电流环路用于维持稳定驱动,外功率环路用于维持灯在其使用期间的功率恒定,并根据Buck降压变换器DCM模式下的小信号模型,以PI算法作为数字补偿器,完成补偿环路设计,保证电路输出稳定性。为抑制声共振,该电路结构采用三级式结构的电子镇流器,以低频方波驱动。设计和测试结果表明,该电子镇流器驱动电路可实现450 W的恒功率控制,误差值小于3%。该电子镇流器驱动电路结构简单,可靠性高,可适用于450 W HID灯驱动。展开更多
文摘An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.
文摘针对传统车载HID灯电子镇流器工作效率低的问题,提出并研究了一种新型车载HID灯电子镇流器准谐振拓扑。与传统车载HID灯电子镇流器拓扑相比,该新型车载HID灯电子镇流器准谐振拓扑的开关管工作于零电压导通(Zero Voltage switching,ZVS)状态,二极管工作于零电流关断(Zero Current switching,ZCS)状态,实现了高效率功率变换。同时,该新型车载HID灯电子镇流器准谐振拓扑能够快速响应负载变化,简化了DC-DC变换器设计。详细分析了这种新型车载HID灯电子镇流器准谐振拓扑的工作原理及关键参数的设计原则,最后通过实验验证了理论分析的正确性。
文摘为解决HID灯的老化及灯的伏安特性变化引起的功率漂移问题,基于Buck降压变换器的平均电流控制模式,设计并制作了一款具有恒功率控制能力的数字控制电子镇流器驱动电路,包含两个控制环路:内电流环路用于维持稳定驱动,外功率环路用于维持灯在其使用期间的功率恒定,并根据Buck降压变换器DCM模式下的小信号模型,以PI算法作为数字补偿器,完成补偿环路设计,保证电路输出稳定性。为抑制声共振,该电路结构采用三级式结构的电子镇流器,以低频方波驱动。设计和测试结果表明,该电子镇流器驱动电路可实现450 W的恒功率控制,误差值小于3%。该电子镇流器驱动电路结构简单,可靠性高,可适用于450 W HID灯驱动。
