Organic light-emitting materials have attracted considerable attention because of their promising applications in diverse areas.Most fluorophores emit brightly in either dilute solutions or aggregate states;the former...Organic light-emitting materials have attracted considerable attention because of their promising applications in diverse areas.Most fluorophores emit brightly in either dilute solutions or aggregate states;the former generally suffer from aggregation-caused quenching problem,and the latter encounter intensity loss at low concentrations.Herein,we propose a new strategy to overcome these dilemmas by balancing the planar and distorted structures of terphenyl-based luminogens and obtain three luminogens,2PB-AC,2Me2PB-AC,and 2T2PB-AC,with bright emission in both solution and aggregate states.Among them,2PB-AC shows absolute photoluminescence quantum yields(ФPL)higher than 90%in both tetrahydrofuran solution(90.2%)and aggregate states(92.7%for powder and 95.3%for crystal).Thus,2PB-AC could be an efficient probe to realize dual-channel explosive detection in both solution and aggregate states.Moreover,it could be used to image live-cell lipid droplets at a wide range of concentrations.In addition,benefiting from its thermodynamically favorable intersystem crossing process,2Me2PB-AC could be doped in polymethyl methacrylate matrix to provide efficient room-temperature phosphorescence.Thus,this work provides a feasible strategy for the design of luminogens with highly efficient emission in both solution and aggregate states,greatly facilitating and broadening their practical applications.展开更多
With one-and two-dimensional particle-in-cell(PIC)codes,we simulate the generation of high power terahertz(THz)emission from the interaction of ultrashort intense lasers with tenuous plasma and gas targets.By driving ...With one-and two-dimensional particle-in-cell(PIC)codes,we simulate the generation of high power terahertz(THz)emission from the interaction of ultrashort intense lasers with tenuous plasma and gas targets.By driving high-amplitude electron plasma waves either with a laser wakefield or the beatwave of two laser pulses,powerful THz electromagnetic pulses can be produced by linear mode conversion in inhomogeneous plasma or by the transient current induced at the surfaces of a thin plasma layer of few plasma wavelengths.Even with incident lasers at moderate intensity such as 1017W/cm2,the produced emission can be at the level of tens of MW in power and capable of affording field strengths of a few MV/cm,suitable for the studies of THz nonlinear physics.With field ionization included in the PIC codes,THz emission from laser interaction with tenuous gas targets is simulated.It is found that the transient transverse current formed during the ionization processes is responsible for the THz emission.With this mechanism,onemay also obtain THz fields ofMV/cm at lower laser intensity as compared with the schemes of plasma-wave excitation.展开更多
Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional ...Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.展开更多
As no complete and comprehensive studies have been previously reported for La-doped nanocrystalline SrZrO_(3)(SZO),we researched herein a detailed investigation for pure and La-doped samples.A modified solid-state rea...As no complete and comprehensive studies have been previously reported for La-doped nanocrystalline SrZrO_(3)(SZO),we researched herein a detailed investigation for pure and La-doped samples.A modified solid-state reaction process,including successive cycles of milling and sintering at high temperature,was followed to produce SZO and Sr_(0.9)La_(0.1)ZrO_(3)(SLZO)powdered ingots.Rietveld analysis of X-ray diffractometer data predicts that the two samples exhibit orthorhombic structure with an increase in crystallite size by~25%for doped sample.A great reduction in Raman modes intensity(~60%)and an annihilation of several vibration modes were detected using Raman spectroscopy.The degree of ordering on the B-site was recorded to be higher in La-doped sample.According to ultraviolet-visible(UV-Vis)absorption,a decrease in the optical gap width(E_(g))from 4.40 eV to 4.21 eV was achieved by La incorporation due to the presence of additional defect states such as oxygen and Sr vacancies at the band edge.The process of electron-hole recombination was studied using photoluminescence(PL)spectroscopy.Deconvolution of PL spectra yielded four emission bands:one green band,one blue band,and two violet bands.Highly intense violet emission atλ=393 nm approximately five times greater than that detected for pure SZO is realized as La^(3+)substitutes for Sr^(2+).Such property nominates SLZO for technological applications requiring highly intense violet emission,e.g.,light-emitting diodes.展开更多
基金This work was financially supported by the National Natural Science Foundation of China(grant no.21788102)the Natural Science Foundation of Guangdong Province(grant nos.2019B030301003 and 2016A030312002)the Innovation and Technology Commission of Hong Kong(grant no.ITC-CNERC14S01).
文摘Organic light-emitting materials have attracted considerable attention because of their promising applications in diverse areas.Most fluorophores emit brightly in either dilute solutions or aggregate states;the former generally suffer from aggregation-caused quenching problem,and the latter encounter intensity loss at low concentrations.Herein,we propose a new strategy to overcome these dilemmas by balancing the planar and distorted structures of terphenyl-based luminogens and obtain three luminogens,2PB-AC,2Me2PB-AC,and 2T2PB-AC,with bright emission in both solution and aggregate states.Among them,2PB-AC shows absolute photoluminescence quantum yields(ФPL)higher than 90%in both tetrahydrofuran solution(90.2%)and aggregate states(92.7%for powder and 95.3%for crystal).Thus,2PB-AC could be an efficient probe to realize dual-channel explosive detection in both solution and aggregate states.Moreover,it could be used to image live-cell lipid droplets at a wide range of concentrations.In addition,benefiting from its thermodynamically favorable intersystem crossing process,2Me2PB-AC could be doped in polymethyl methacrylate matrix to provide efficient room-temperature phosphorescence.Thus,this work provides a feasible strategy for the design of luminogens with highly efficient emission in both solution and aggregate states,greatly facilitating and broadening their practical applications.
基金This workwas supported in part by theNationalNatural Science Foundation of China(Grants No.10425416,10335020,10674175,60621063)the National High-Tech ICF Committee in China,and the National Basic Research Program of China(Grant No.2007CB310406).
文摘With one-and two-dimensional particle-in-cell(PIC)codes,we simulate the generation of high power terahertz(THz)emission from the interaction of ultrashort intense lasers with tenuous plasma and gas targets.By driving high-amplitude electron plasma waves either with a laser wakefield or the beatwave of two laser pulses,powerful THz electromagnetic pulses can be produced by linear mode conversion in inhomogeneous plasma or by the transient current induced at the surfaces of a thin plasma layer of few plasma wavelengths.Even with incident lasers at moderate intensity such as 1017W/cm2,the produced emission can be at the level of tens of MW in power and capable of affording field strengths of a few MV/cm,suitable for the studies of THz nonlinear physics.With field ionization included in the PIC codes,THz emission from laser interaction with tenuous gas targets is simulated.It is found that the transient transverse current formed during the ionization processes is responsible for the THz emission.With this mechanism,onemay also obtain THz fields ofMV/cm at lower laser intensity as compared with the schemes of plasma-wave excitation.
基金financially supported by the National Natural Science Foundation of China (Nos. 62074018 and 61704011)the China Postdoctoral Science Foundation Funded Project (Nos. 2019M652176 and 2019M661680)+4 种基金the Developing Project of Science and Technology of Jilin Province (Nos. 20200301052RQ, 20200201266JC, 20190701029GH, 20180519017JH and 20180520177JH)the Project of Education Department of Jilin Province (No. JJKH20210831KJ)the Natural Science Foundation of Guangdong Province (No. 2020A1515010868)Shenzhen Fundamental Research Fund (No. JCYJ20180307151538972)supported by R&D project of Collighter Co., Ltd。
文摘Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.
基金the Grants Commission of Al-Azhar University,Cairo,Egypt for supporting this work。
文摘As no complete and comprehensive studies have been previously reported for La-doped nanocrystalline SrZrO_(3)(SZO),we researched herein a detailed investigation for pure and La-doped samples.A modified solid-state reaction process,including successive cycles of milling and sintering at high temperature,was followed to produce SZO and Sr_(0.9)La_(0.1)ZrO_(3)(SLZO)powdered ingots.Rietveld analysis of X-ray diffractometer data predicts that the two samples exhibit orthorhombic structure with an increase in crystallite size by~25%for doped sample.A great reduction in Raman modes intensity(~60%)and an annihilation of several vibration modes were detected using Raman spectroscopy.The degree of ordering on the B-site was recorded to be higher in La-doped sample.According to ultraviolet-visible(UV-Vis)absorption,a decrease in the optical gap width(E_(g))from 4.40 eV to 4.21 eV was achieved by La incorporation due to the presence of additional defect states such as oxygen and Sr vacancies at the band edge.The process of electron-hole recombination was studied using photoluminescence(PL)spectroscopy.Deconvolution of PL spectra yielded four emission bands:one green band,one blue band,and two violet bands.Highly intense violet emission atλ=393 nm approximately five times greater than that detected for pure SZO is realized as La^(3+)substitutes for Sr^(2+).Such property nominates SLZO for technological applications requiring highly intense violet emission,e.g.,light-emitting diodes.
