A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultra...A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.展开更多
The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid inte...The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time. It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem. The temperature gradient and stress decreases significantly as the gas pressure increases. The convexity of the solid-liquid interface slightly increases when the gas pressure increases. Numerical analysis was used to optimize the hot zone design.展开更多
基金Project supported by National Key Research and Development Plan of China(Grant Nos.2016YFB0400600 and 2016YFB0400601)the National Natural Science Foundation of China(Grant Nos.61574026,11675198,61774072,and 11405017)+2 种基金the Natural Science Foundation of Liaoning Province,China(Grant Nos.201602453 and 201602176)China Postdoctoral Science Foundation Funded Project(Grant No.2016M591434)the Dalian Science and Technology Innovation Fund(Grant No.2018J12GX060)
文摘A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.
文摘The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time. It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem. The temperature gradient and stress decreases significantly as the gas pressure increases. The convexity of the solid-liquid interface slightly increases when the gas pressure increases. Numerical analysis was used to optimize the hot zone design.
