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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_(0.18) Al_(0.82) N/AlN/GaN heterostructure field-effect transistors
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作者 于英霞 林兆军 +4 位作者 栾崇彪 吕元杰 冯志红 杨铭 王玉堂 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第4期517-520,共4页
By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (l-V) characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are sim... By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (l-V) characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher. 展开更多
关键词 in0.18a10.82n/ain/gan heterostructure field-effect transistors channel electric field distribution polarization Coulomb field scattering two-dimensional electron gas mobility
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