The loss mechanisms of different passive devices （on-chip inductors and capacitors） on different substrates are analyzed and compared. OPS （oxidized porous silicon） and HR （high-resistivity） substrates are used ...The loss mechanisms of different passive devices （on-chip inductors and capacitors） on different substrates are analyzed and compared. OPS （oxidized porous silicon） and HR （high-resistivity） substrates are used as low-loss substrates for on-chip planar LPF （low pass filter） fabrication. For the study of substrate loss, a planar coil inductor is also designed. Simulation results show that Q （the quality factor） of the inductor on both substrates is over 20. Measurements of the LPF on OPS substrate give a - 3dB bandwidth of 2.9GHz and a midband insertion loss of 0.87dB at 500MHz. The LPF on HR substrate gives a - 3dB bandwidth of 2.3GHz and a midband insertion loss of 0.42dB at 500MHz.展开更多
文摘The loss mechanisms of different passive devices （on-chip inductors and capacitors） on different substrates are analyzed and compared. OPS （oxidized porous silicon） and HR （high-resistivity） substrates are used as low-loss substrates for on-chip planar LPF （low pass filter） fabrication. For the study of substrate loss, a planar coil inductor is also designed. Simulation results show that Q （the quality factor） of the inductor on both substrates is over 20. Measurements of the LPF on OPS substrate give a - 3dB bandwidth of 2.9GHz and a midband insertion loss of 0.87dB at 500MHz. The LPF on HR substrate gives a - 3dB bandwidth of 2.3GHz and a midband insertion loss of 0.42dB at 500MHz.
