A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-...A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.展开更多
本文采用量子力学理论,计算了半导体量子阱中磁极化子的能量和波函数以及声子出现的几率,以 GaAs 为例,探讨了磁场和阱宽对磁极化子的能量和声子出现几率的影响.结果表明:磁极化子有α、β两态,这两种态中,能量和声子出现一个纵光学(LO...本文采用量子力学理论,计算了半导体量子阱中磁极化子的能量和波函数以及声子出现的几率,以 GaAs 为例,探讨了磁场和阱宽对磁极化子的能量和声子出现几率的影响.结果表明:磁极化子有α、β两态,这两种态中,能量和声子出现一个纵光学(LO)声子的几率随磁场和阱宽的变化而不同;在α态中,磁极化子的能量随磁场增大而线性减小,随阱宽的增大而非线性减小,出现一个 LO 声子的几率随磁场的增大而减小,随阱宽的增大而增大,而在β态中则相反;系统出现一个 LO 声子的几率非常的小(不到万分之一).展开更多
文摘A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.
文摘本文采用量子力学理论,计算了半导体量子阱中磁极化子的能量和波函数以及声子出现的几率,以 GaAs 为例,探讨了磁场和阱宽对磁极化子的能量和声子出现几率的影响.结果表明:磁极化子有α、β两态,这两种态中,能量和声子出现一个纵光学(LO)声子的几率随磁场和阱宽的变化而不同;在α态中,磁极化子的能量随磁场增大而线性减小,随阱宽的增大而非线性减小,出现一个 LO 声子的几率随磁场的增大而减小,随阱宽的增大而增大,而在β态中则相反;系统出现一个 LO 声子的几率非常的小(不到万分之一).
