期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Optimization and Application of SRAM in 90nm CMOS Technology
1
作者 周清军 刘红侠 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期883-888,共6页
This paper presents an optimized SRAM that is repairable and dissipates less power. To improve the yield of SRAMs per wafer,redundancy logic and an E-FUSE box are added to the SRAM and an SR SRAM is set up. In order t... This paper presents an optimized SRAM that is repairable and dissipates less power. To improve the yield of SRAMs per wafer,redundancy logic and an E-FUSE box are added to the SRAM and an SR SRAM is set up. In order to reduce power dissipation,power on/off states and isolation logic are introduced into the SR SRAM and an LPSR SRAM is constructed. The optimized LPSR SRAM64K × 32 is used in SoC and the testing method of the LPSR SRAM64K × 32 is also discussed. The SoC design is successfully implemented in the Chartered 90nm CMOS process. The SoC chip occupies 5. 6mm× 5. 6ram of die area and the power dissipation is 1997mW. The test results indicate that LPSR SRAM64K ×32 obtains 17. 301% power savings and the yield of the LPSR SRAM64K × 32s per wafer is improved by 13. 255%. 展开更多
关键词 OPTIMIZATION lpsr SRAM redundancy logic power on/off states
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部