Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic d...Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices.The conventional gas-phase growth techniques,however,are not compatible with direct patterning processes.Similarly,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high temperatures.Here,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated.It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases.Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes.The IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing window.However,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters.The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window.This unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.展开更多
This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3+-doped solid-state crystals mainly on cubic crystals with 99.99% puri...This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3+-doped solid-state crystals mainly on cubic crystals with 99.99% purity which could be extended to laser ceramics of the same composition.展开更多
A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical bran...A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical brancheshave been derived. It is found that the temperature-independent contributions are very important, especially at lowtemperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PSwithout EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theoryfor PS of energy spectra, the total PS of R1 line of tunable laser crystal GSGG:Cr3+ at 70 K as well as the ones of itsR1 line, R2 line and U band at 300 K will be successfully calculated and explained in this series of papers.展开更多
Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communi- cation, medicine, laser-range-finding, lidar, etc. Er3+ and Yb3+ co-doped crystal pumped by diode laser around 976 nm is an attractive...Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communi- cation, medicine, laser-range-finding, lidar, etc. Er3+ and Yb3+ co-doped crystal pumped by diode laser around 976 nm is an attractive method for obtaining 1.5～1.6 μm laser in compact device with high output beam quality. In this paper, the recent research and progress of several important Er3+ and Yb3+ co-doped laser crystals at 1.5～1.6 μm in authors’ lab are reported.展开更多
By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu...By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu3+ =Y2O3 and laser crystals Tb3+:=YAlO3 and Nd3+:YVO4, are investigated in detail. On the basis of three fitting Ω parameters and the effective reduced matrix elements, the spectral linestrengths, spontaneous emission probabilities, fluorescent branching ratios and lifetimeare calculated. The better agreement between theoretical results and experimental dataindicates the importance of J-mixing in the spectroscopic study of laser crystals.展开更多
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 c...A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.展开更多
By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 lin...By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 line,and U band of GSGG:Cr^3+ at 300 K have been calculated,respectively.The calcualted results are in good agreement with all the experimental data.Their physical origins have also been explained.It is found that the mixingdegree of t2^2(^3T1)e^4T2) and |t2^3 3E>base-wavefunctions in the wavefunctions of R1 level of GSGG:Cr^3+ at 300K is remarkable under normal pressure,and the mixing-degree rapidly decreases with increasing pressure.The change of the mixing-degree with pressure plays a key role not only for the pure electronic'PS of R1 line and R2 line but also the PS of R1 line and R2 line due to EPI.The pressure-dependent behaviors of the pure electronic 'PS of R1 line(or R2 line) and the PS of R1 line(or R2 line) due to EPI are quite different.It is the combined effect of them that gives rise to the total PS of R1 line(or R2 line).In the range of about 15 kar-45kbar,the mergence and /or order-reversal between t2^2(3T1)e^4T2 levels and t2^32T1 levels take place,which cause the fluctuation of the rate of PS for t2^2(3T1)e^4T2(or t2^32T1) with pressure,At 300K,both the temperature-dependent contribution to R1 line(Or R2 line or U band) from EPI and the temperature-independent one are important.展开更多
With the strong-field scheme and trigonal bases, the complete d3 energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunct...With the strong-field scheme and trigonal bases, the complete d3 energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunctions of GSGG:Cr3+ at 70 K and 300 K have been calculated without the electron-phonon interaction (EPI), respectively. Further, the contributions to energy spectra from EPI at two temperatures have also been calculated, where temperatureindependent terms of EPI are found to be dominant. The sum of aforementioned two parts gives rise to the total energy spectrum. The calculated results are in good agreement with all the optical-spectral experimental data and the experimental results of g||(R1) and g⊥(R1). It is found that the contribution from EPI to R1 line of GSGG:Cr3+ with taking into account spin-orbit interaction (Hso) and trigonal field (Vtrig) is much larger than the one with neglecting Hso and Vtrig, and accordingly it is essential for the calculation of the EPI effect to take first into account Hso and Vtrig. The admixture of base-wavefunctions, |t32 2E) and |t22(3T1)e4T2 ), the average energy separation △＝ E[t22 (3T1)e4T2]-E[t32 2E] and their variations with temperature have been calculated and discussed.展开更多
By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts ofenergy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of...By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts ofenergy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R1 line ofGSGG:Cr3+ at 70 K have been calculated, respectively. Their physical origins have been revealed. It is found that theremarkable under the normal pressure, and the degree of the admixture rapidly decreases with increasing pressure. Thechange of the degree of the admixture with the pressure plays a key role for not only the pure electronic PS of R1 line butalso the PS ofR1 line due to EPL The detailed calculations and analyses show that the pressure-dependent behaviors ofthe pure electronic PS of R1 line and the PS of R1 line due to EPI are quite different. It is the combined effect of themthat gives rise to the total PS of R1 line, which has satisfactorily explained the experimental data (including a reversal ofPS of R1 line). In contributions to PS of R1 line due to EPI at 70 K, the temperature-independent contribution is muchlarger than the temperature-dependent contribution. The former results from the interaction between the zero-pointvibration of the lattice and localized electronic state.展开更多
We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is clo...We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is close to zero in the 968 nm pumping and 2.7-3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr:GYSGG composite crystal before and after the gammaray irradiation. These results suggest that Er,Pr:GYSGG crystal as a laser gain medium possesses a distinguished antiradiation ability for application in space and radiant environments.展开更多
Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface inte...Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent polishing process,thus reducing the manufacturing cost.The development of cost-effective grinding technologies for those crystals requires an in-depth understanding of their deformation and removal mechanisms.As a result,a great deal of research efforts were directed towards studying this topic in the past two or three decades.In this review,we aimed to summarize the deformation and removal characteristics of representative semiconductor and laser single crystals in accordance with the scale of mechanical loading,especially at extremely small scales.Their removal mechanisms were critically examined based on the evidence obtained from highresolution TEM analyses.The relationships between machining conditions and removal behaviors were discussed to provide a guidance for further advancing of the grinding technologies for those crystals.展开更多
The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows: the pulling rate was 0.16 mm/h; the rotation speed was...The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows: the pulling rate was 0.16 mm/h; the rotation speed was 3 rpm; the cooling rate was 15 °C/h. The result of XRD curve showed that as-grown Tm,Ho:LiYF4 laser crystal belonged to the monoclinic system with scheelite-type structure and space group I41/a. The cell parameters calculated were: a=0.52160 nm, c=1.09841 nm and Z=4. Absorption and fluorescence spectra of Tm,Ho:LiYF4 laser crystal at room temperature were measured and analysed. The absorption cross section, FWHM and absorption coefficient at 779.3 nm calculated were 7.44×10-21 cm2, 8.7 nm and 2.23 cm-1, respectively. An intensive fluorescence emission peak appeared near 2045 nm. The emission cross section and fluorescence lifetime were 0.87×10-20 cm2 and 10.8 ms, respectively. The ratio of Tm-Ho transfer to its back-transfer process was 10.6.展开更多
Single crystal of Yb x Y 1- x Al 3(BO 3) 4 (Yb∶YAB) was grown by using flux method based on the potassium trimolybdate. 160 mW efficient continuous wave green output was obtained from a fibre coupled 976 nm laser dio...Single crystal of Yb x Y 1- x Al 3(BO 3) 4 (Yb∶YAB) was grown by using flux method based on the potassium trimolybdate. 160 mW efficient continuous wave green output was obtained from a fibre coupled 976 nm laser diode. The conversion efficiency is larger than 11 3%, and the electrical input green conversion efficiency is 3 9%. Tunable green output from 513 0 to 545 8 nm is also demonstrated with a quartz birefringent filter. By enhancing the incident pump power, 1 1 W cw green output can be reached.展开更多
Raman lasers based on potassium gadolinium tungstate and lead tungstate crystals pumped by a≈120 ps Nd: YAG laser at 1.064/μm were developed. High reflection mirrors for the Stokes wavelength have been used to gener...Raman lasers based on potassium gadolinium tungstate and lead tungstate crystals pumped by a≈120 ps Nd: YAG laser at 1.064/μm were developed. High reflection mirrors for the Stokes wavelength have been used to generate near-infrared and eye safe spectral region of 1.15 - 1.32/μm. Second harmonic generation of the generated Raman lasers was observed. Eifficient multiple Stokes and anti-Stokes picosecond generation in 64 crystals have been shown to exhibit stimulated Raman scattering on about 700 lines covering the whole visible and near-infrared spectrum. All stimulated Raman scattering (SRS) wavelengths in the visible and near-infrared spectrum are identified and attributed to the SRS-active vibration modes of these crystals.展开更多
This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz.For a linearly polarized...This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz.For a linearly polarized femtosecond laser,the periodic nanograting structure on the ablation crater surface was promoted.The period of self-organization structures is about 180 nm.The grating orientation is adjusted by the laser polarization direction.A long range Bragglike grating is formed by moving the sample at a speed of 10 μm/s.For a circularly polarized laser beam,uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal.展开更多
An electrically driven, single-longitudinal-mode GaAs based photonic crystal (PC) ridge waveguide (RWG) laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved b...An electrically driven, single-longitudinal-mode GaAs based photonic crystal (PC) ridge waveguide (RWG) laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma (ICP) etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.展开更多
The effect of laser energy density on the crystallization of hydrogenated intrinsic amorphous silicon(a-Si:H) thin films was studied both theoretically and experimentally. The thin films were irritated by a frequency-...The effect of laser energy density on the crystallization of hydrogenated intrinsic amorphous silicon(a-Si:H) thin films was studied both theoretically and experimentally. The thin films were irritated by a frequency-doubled(λ = 532 nm)Nd:YAG pulsed nanosecond laser. An effective density functional theory model was built to reveal the variation of bandgap energy influenced by thermal stress after laser irradiation. Experimental results establish correlation between the thermal stress and the shift of transverse optical peak in Raman spectroscopy and suggest that the relatively greater shift of the transverse optical(TO) peak can produce higher stress. The highest crystalline fraction(84.5%) is obtained in the optimized laser energy density(1000 mJ/cm2) with a considerable stress release. The absorption edge energy measured by the UVvisible spectra is in fairly good agreement with the bandgap energy in the density functional theory(DFT) simulation.展开更多
A new method DV-X<sub>α</sub>-HF is proposed. The DV-X<sub>α</sub>-HF study of the cluster （BeCrO<sub>6</sub>）<sup>7</sup>-is reported for the first time. The single...A new method DV-X<sub>α</sub>-HF is proposed. The DV-X<sub>α</sub>-HF study of the cluster （BeCrO<sub>6</sub>）<sup>7</sup>-is reported for the first time. The single-electron energy eigenvalues, the crystal field sep-aration parameter 10D<sub>q</sub> and charge transfer transition energy are given. The DV-X<sub>α</sub>-HFmethod is also generalized to the multiplet calculation and configuration mixture. The calcu-lated values are in good agreement with the absorption spectrum experiments of laser crystalalexandrite. It is obvious that the combination of DV-X<sub>α</sub> wavefunction and double-electronoperator will probably provide a simple and effective method for the multiplet calculationof clusters.展开更多
基金This work is supported by the Intermural Grant Program(IGP)at Auburn University.
文摘Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices.The conventional gas-phase growth techniques,however,are not compatible with direct patterning processes.Similarly,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high temperatures.Here,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated.It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases.Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes.The IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing window.However,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters.The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window.This unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.
文摘This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3+-doped solid-state crystals mainly on cubic crystals with 99.99% purity which could be extended to laser ceramics of the same composition.
基金Project supported by the National High Technology Development Program of China （Grant No 2002AA303250） and by the National Natural Science Foundation of China （Grant No 60576056）.
文摘A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical brancheshave been derived. It is found that the temperature-independent contributions are very important, especially at lowtemperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PSwithout EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theoryfor PS of energy spectra, the total PS of R1 line of tunable laser crystal GSGG:Cr3+ at 70 K as well as the ones of itsR1 line, R2 line and U band at 300 K will be successfully calculated and explained in this series of papers.
基金Supported by the National Natural Science Foundation of China (No. 50590405 and 50802094)the Major Programs of the Chinese Academy of Sciences (No. SZD08001-1)+1 种基金the Natural Science Foundation of Fujian Province (No. 2008J0173)the Knowledge Innovation Program of the Chinese Academy of Sciences
文摘Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communi- cation, medicine, laser-range-finding, lidar, etc. Er3+ and Yb3+ co-doped crystal pumped by diode laser around 976 nm is an attractive method for obtaining 1.5～1.6 μm laser in compact device with high output beam quality. In this paper, the recent research and progress of several important Er3+ and Yb3+ co-doped laser crystals at 1.5～1.6 μm in authors’ lab are reported.
文摘By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu3+ =Y2O3 and laser crystals Tb3+:=YAlO3 and Nd3+:YVO4, are investigated in detail. On the basis of three fitting Ω parameters and the effective reduced matrix elements, the spectral linestrengths, spontaneous emission probabilities, fluorescent branching ratios and lifetimeare calculated. The better agreement between theoretical results and experimental dataindicates the importance of J-mixing in the spectroscopic study of laser crystals.
文摘A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.
文摘By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 line,and U band of GSGG:Cr^3+ at 300 K have been calculated,respectively.The calcualted results are in good agreement with all the experimental data.Their physical origins have also been explained.It is found that the mixingdegree of t2^2(^3T1)e^4T2) and |t2^3 3E>base-wavefunctions in the wavefunctions of R1 level of GSGG:Cr^3+ at 300K is remarkable under normal pressure,and the mixing-degree rapidly decreases with increasing pressure.The change of the mixing-degree with pressure plays a key role not only for the pure electronic'PS of R1 line and R2 line but also the PS of R1 line and R2 line due to EPI.The pressure-dependent behaviors of the pure electronic 'PS of R1 line(or R2 line) and the PS of R1 line(or R2 line) due to EPI are quite different.It is the combined effect of them that gives rise to the total PS of R1 line(or R2 line).In the range of about 15 kar-45kbar,the mergence and /or order-reversal between t2^2(3T1)e^4T2 levels and t2^32T1 levels take place,which cause the fluctuation of the rate of PS for t2^2(3T1)e^4T2(or t2^32T1) with pressure,At 300K,both the temperature-dependent contribution to R1 line(Or R2 line or U band) from EPI and the temperature-independent one are important.
文摘With the strong-field scheme and trigonal bases, the complete d3 energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunctions of GSGG:Cr3+ at 70 K and 300 K have been calculated without the electron-phonon interaction (EPI), respectively. Further, the contributions to energy spectra from EPI at two temperatures have also been calculated, where temperatureindependent terms of EPI are found to be dominant. The sum of aforementioned two parts gives rise to the total energy spectrum. The calculated results are in good agreement with all the optical-spectral experimental data and the experimental results of g||(R1) and g⊥(R1). It is found that the contribution from EPI to R1 line of GSGG:Cr3+ with taking into account spin-orbit interaction (Hso) and trigonal field (Vtrig) is much larger than the one with neglecting Hso and Vtrig, and accordingly it is essential for the calculation of the EPI effect to take first into account Hso and Vtrig. The admixture of base-wavefunctions, |t32 2E) and |t22(3T1)e4T2 ), the average energy separation △＝ E[t22 (3T1)e4T2]-E[t32 2E] and their variations with temperature have been calculated and discussed.
文摘By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts ofenergy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R1 line ofGSGG:Cr3+ at 70 K have been calculated, respectively. Their physical origins have been revealed. It is found that theremarkable under the normal pressure, and the degree of the admixture rapidly decreases with increasing pressure. Thechange of the degree of the admixture with the pressure plays a key role for not only the pure electronic PS of R1 line butalso the PS ofR1 line due to EPL The detailed calculations and analyses show that the pressure-dependent behaviors ofthe pure electronic PS of R1 line and the PS of R1 line due to EPI are quite different. It is the combined effect of themthat gives rise to the total PS of R1 line, which has satisfactorily explained the experimental data (including a reversal ofPS of R1 line). In contributions to PS of R1 line due to EPI at 70 K, the temperature-independent contribution is muchlarger than the temperature-dependent contribution. The former results from the interaction between the zero-pointvibration of the lattice and localized electronic state.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB1102301)the National Natural Science Foundation of China(Grant Nos.51272254,61405206,and 51502292)the Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology,Electronic Engineering Institute,China(Grant No.SKL2015KF01)
文摘We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is close to zero in the 968 nm pumping and 2.7-3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr:GYSGG composite crystal before and after the gammaray irradiation. These results suggest that Er,Pr:GYSGG crystal as a laser gain medium possesses a distinguished antiradiation ability for application in space and radiant environments.
基金The authors would like to acknowledge the financial supports from Australia Research Council(ARC)under Discovery Projects program(DP180103275)It is also supported by the Scientific Research Funds of Huaqiao University(605-50Y19022)Certain images in this publication have been obtained by the author(s)from the Wikipedia/Wikimedia website,where they were made available under a Creative Commons licence or stated to be in the public domain.Please see individual captions in this publications for details.To the extent that the law allows,IOP Publishing disclaim any liability that any person may suffer as a result of accessing,using or forwarding the image(s).Any reuse rights should be checked and permission should be sought if necessary from the Wikipedia/Wikimedia and/or the copyright owner(as appropriate)before using or forwarding the image(s).
文摘Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent polishing process,thus reducing the manufacturing cost.The development of cost-effective grinding technologies for those crystals requires an in-depth understanding of their deformation and removal mechanisms.As a result,a great deal of research efforts were directed towards studying this topic in the past two or three decades.In this review,we aimed to summarize the deformation and removal characteristics of representative semiconductor and laser single crystals in accordance with the scale of mechanical loading,especially at extremely small scales.Their removal mechanisms were critically examined based on the evidence obtained from highresolution TEM analyses.The relationships between machining conditions and removal behaviors were discussed to provide a guidance for further advancing of the grinding technologies for those crystals.
基金Project supported by Changchun Science and Technology Bureau (2009110)Jilin Provincial Education Department (2009JYT15)Jilin Pro-vincial Science and Technology Department (20100556)
文摘The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows: the pulling rate was 0.16 mm/h; the rotation speed was 3 rpm; the cooling rate was 15 °C/h. The result of XRD curve showed that as-grown Tm,Ho:LiYF4 laser crystal belonged to the monoclinic system with scheelite-type structure and space group I41/a. The cell parameters calculated were: a=0.52160 nm, c=1.09841 nm and Z=4. Absorption and fluorescence spectra of Tm,Ho:LiYF4 laser crystal at room temperature were measured and analysed. The absorption cross section, FWHM and absorption coefficient at 779.3 nm calculated were 7.44×10-21 cm2, 8.7 nm and 2.23 cm-1, respectively. An intensive fluorescence emission peak appeared near 2045 nm. The emission cross section and fluorescence lifetime were 0.87×10-20 cm2 and 10.8 ms, respectively. The ratio of Tm-Ho transfer to its back-transfer process was 10.6.
文摘Single crystal of Yb x Y 1- x Al 3(BO 3) 4 (Yb∶YAB) was grown by using flux method based on the potassium trimolybdate. 160 mW efficient continuous wave green output was obtained from a fibre coupled 976 nm laser diode. The conversion efficiency is larger than 11 3%, and the electrical input green conversion efficiency is 3 9%. Tunable green output from 513 0 to 545 8 nm is also demonstrated with a quartz birefringent filter. By enhancing the incident pump power, 1 1 W cw green output can be reached.
文摘Raman lasers based on potassium gadolinium tungstate and lead tungstate crystals pumped by a≈120 ps Nd: YAG laser at 1.064/μm were developed. High reflection mirrors for the Stokes wavelength have been used to generate near-infrared and eye safe spectral region of 1.15 - 1.32/μm. Second harmonic generation of the generated Raman lasers was observed. Eifficient multiple Stokes and anti-Stokes picosecond generation in 64 crystals have been shown to exhibit stimulated Raman scattering on about 700 lines covering the whole visible and near-infrared spectrum. All stimulated Raman scattering (SRS) wavelengths in the visible and near-infrared spectrum are identified and attributed to the SRS-active vibration modes of these crystals.
基金Project supported by the Shanghai Leading Academic Discipline Project (Grant No T0104)the Shanghai Nano-technology Promotion Center and Science & Technology of Shanghai Municipality (Grant No 0652nm005)Innovation Fund of Shanghai University,China
文摘This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz.For a linearly polarized femtosecond laser,the periodic nanograting structure on the ablation crater surface was promoted.The period of self-organization structures is about 180 nm.The grating orientation is adjusted by the laser polarization direction.A long range Bragglike grating is formed by moving the sample at a speed of 10 μm/s.For a circularly polarized laser beam,uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal.
基金Project supported by the National Natural Science Foundation of China (Grant No. 91121019)the National Basic Research Program of China (Grant No. 2013CB632105)
文摘An electrically driven, single-longitudinal-mode GaAs based photonic crystal (PC) ridge waveguide (RWG) laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma (ICP) etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.
基金Project supported by the Shanghai Leading Academic Disciplines,China(Grant No.S30107)
文摘The effect of laser energy density on the crystallization of hydrogenated intrinsic amorphous silicon(a-Si:H) thin films was studied both theoretically and experimentally. The thin films were irritated by a frequency-doubled(λ = 532 nm)Nd:YAG pulsed nanosecond laser. An effective density functional theory model was built to reveal the variation of bandgap energy influenced by thermal stress after laser irradiation. Experimental results establish correlation between the thermal stress and the shift of transverse optical peak in Raman spectroscopy and suggest that the relatively greater shift of the transverse optical(TO) peak can produce higher stress. The highest crystalline fraction(84.5%) is obtained in the optimized laser energy density(1000 mJ/cm2) with a considerable stress release. The absorption edge energy measured by the UVvisible spectra is in fairly good agreement with the bandgap energy in the density functional theory(DFT) simulation.
文摘A new method DV-X<sub>α</sub>-HF is proposed. The DV-X<sub>α</sub>-HF study of the cluster （BeCrO<sub>6</sub>）<sup>7</sup>-is reported for the first time. The single-electron energy eigenvalues, the crystal field sep-aration parameter 10D<sub>q</sub> and charge transfer transition energy are given. The DV-X<sub>α</sub>-HFmethod is also generalized to the multiplet calculation and configuration mixture. The calcu-lated values are in good agreement with the absorption spectrum experiments of laser crystalalexandrite. It is obvious that the combination of DV-X<sub>α</sub> wavefunction and double-electronoperator will probably provide a simple and effective method for the multiplet calculationof clusters.
