The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical pro...The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.展开更多
The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coa...The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.展开更多
We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an...We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.展开更多
Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance s...Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.展开更多
A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,0...A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.展开更多
GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated.The ITO surface was textured by inductively coupled plasma (ICP) etching tec...GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated.The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask.The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer.In addition,the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics.The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface,and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.展开更多
All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Here...All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Herein,we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr_(3) QDs by using 2-hexyldecanoic acid(DA)as a ligand to replace the regular oleic acid(OA)ligand.Thanks to the strong binding energy between DA ligand and QDs,the modified QDs not only show a high photoluminescence quantum yield(PLQY)of 96%but also exhibit high stability against ethanol and water.Thereby warm white light-emitting diodes(WLEDs)are constructed by combining lig-and modified CsPbBr_(3) QDs with red AgInZnS QDs on blue emitting InGaN chips,exhibiting a color rendering index of 93,a power efficiency of 64.8 lm/W,a CIE coordinate of(0.44,0.42)and correlated color temperature value of 3018 K.In ad-dition,WLEDs based on ligand modified CsPbBr_(3) QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr_(3) QDs.The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr_(3) QDs are ideal for WLEDs application.展开更多
The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material.In particular,nanocrystals(NCs)of inorganic perovskites have demonstrated excellen...The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material.In particular,nanocrystals(NCs)of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications.However,the presence of surface defects on the NCs negatively impacts their performance in devices.Herein,we report a compatible facial post-treatment of CsPbI_(3) nanocrystals using guanidinium iodide(GuI).It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation.As a consequence,the film of treated CsPbI_(3) nanocrystals exhibited significantly enhanced luminescence and charge transport properties,leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8%with high brightness(peak luminance of 7039 cd m^(−2) and a peak current density of 10.8 cd A^(−1)).The EQE is over threefold higher than performance of untreated device(EQE:3.8%).The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min(at current density of 25 mA cm^(−2)),outperforming the untreated devices(T50~6 min).展开更多
In order to reduce the Schottky barrier height and sheet resistance between graphene(Gr) and the p-GaN layers in GaN-based light-emitting diodes(LEDs), conductive transparent thin films with large work function are re...In order to reduce the Schottky barrier height and sheet resistance between graphene(Gr) and the p-GaN layers in GaN-based light-emitting diodes(LEDs), conductive transparent thin films with large work function are required to be inserted between Gr and p-GaN layers. In the present work, three kinds of transparent conductive oxide(TCO) zinc oxide(ZnO) films, Al-, Ga-, and In-doped ZnO(AZO, GZO, and IZO), are introduced as a bridge layer between Gr and p-GaN,respectively. The influence of different combinations of Gr/ZnO hybrid transparent conducting layers(TCLs) on the optical and thermal characteristics of the GaN-LED was investigated by the finite element method through COMSOL software. It is found that both the TCL transmittance and the surface temperature of the LED chip reduce with the increase in Gr and ZnO thickness. In order to get the transmittance of the Gr/ZnO hybrid TCL higher than 80%, the appropriate combination of Gr/ZnO compound electrode should be a single layer of Gr with ZnO no thicker than 400 nm(1 L Gr/400-nm ZnO),2 L Gr/300-nm ZnO, 3 L Gr/200-nm ZnO, or 4 L Gr/100-nm ZnO. The LEDs with hybrid TCLs consisting of 1 L Gr/300-nm AZO, 2 L Gr/300-nm GZO, and 2 L Gr/300-nm IZO have good performance, among which the one with 1 L Gr/300-nm GZO has the best thermal property. Typically, the temperature of LEDs with 1 L Gr/300-nm GZO hybrid TCLs will drop by about 7 K compared with that of the LEDs with a TCL without ZnO film.展开更多
We have investigated the factors affecting the current spreading length(CSL) in GaN-based light-emitting diodes(LEDs) by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,t...We have investigated the factors affecting the current spreading length(CSL) in GaN-based light-emitting diodes(LEDs) by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide(ITO) and n-GaN are taken into account for the first time,and a new Q factor is introduced to explain the effects of different current flow paths on the CSL.The calculations and simulations show that the CSL can be enhanced by increasing the thickness of the ITO layer and resistivity of the n-GaN layer,or by reducing the resistivity of the ITO layer and thickness of the n-GaN layer.The results provide theoretical support for calculating the CSL clearly and directly.For vertical-structure LEDs,the effects of resistivity and thickness of the CSL on the internal quantum efficiency(IQE) have been analyzed.The theoretical expression relating current density and the parameters(resistivity and thickness)of the CSL is obtained,and the results are then verified by simulation.The IQE under different current injection conditions is discussed.The effects of CSL resistivity play a key role at high current injection,and there is an optimal thickness for the largest IQE only at a low current injection.展开更多
The interlayer(IL) plays a vital role in hybrid white organic light-emitting diodes(WOLEDs); however,only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time,has be...The interlayer(IL) plays a vital role in hybrid white organic light-emitting diodes(WOLEDs); however,only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time,has been demonstrated to achieve a high efficiency, high color rendering index(CRI), and low voltage trade-off.The device exhibits a maximum total efficiency of 41.5 lm W^(-1), the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs(80–88) at practical luminances(C1000 cd m^(-2)) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V([1 cd m^(-2)), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs.展开更多
An increase in luminance of a polymer light-emitting diode(PLED) was obtained by fabricating a graded doping structure using a vacuum spray method. The small electron transport molecule, Tris(8-hydroxyquinolinato) alu...An increase in luminance of a polymer light-emitting diode(PLED) was obtained by fabricating a graded doping structure using a vacuum spray method. The small electron transport molecule, Tris(8-hydroxyquinolinato) aluminum(III)(Alq3), was graded dispersed along the film in the direction of growth in the hole transport polymer poly(3-hexylthiophene-2,5-diyl)(P3HT, regiorandom) layer of the PLED, despite being dissolved in the same organic solvent as the polymer. The PLED reported here, which is composed of a graded structure, emitted brighter light than PLEDs composed of pure polymer or of a blend of active layers prepared by spin coating and/or vacuum spray methods.展开更多
Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm^2V^(-1)s^(-1), demonstrating great potential for high-performance, l...Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm^2V^(-1)s^(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm^2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm^2V^(-1)s^(-1)(average mobility 1.2 cm^2V^(-1)s^(-1)) and 3.0 cm^2V^(-1)s^(-1)(average mobility2.0 cm^2V^(-1)s^(-1)), respectively. They both have a high on/off ratio(I_(on)/I_(off))>10~9. The performance can well satisfy the requirements for light-emitting diodes driving.展开更多
The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes(LEDs) is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths...The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes(LEDs) is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current,which results from the Mg-dopant-related polarization screening.The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region.Light outputs follow the power law L ∝ I^m,with smaller parameter m in the LEDs with less Mg back-diffusion,indicating a lower density of trap states.The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region.Furthermore,the forward current-voltage characteristics are improved.展开更多
The transport mechanisms of the reverse leakage current in the UV light-emitting diodes(380 nm) are investigated by the temperature-dependent current-voltage measurement first.Three possible transport mechanisms,the s...The transport mechanisms of the reverse leakage current in the UV light-emitting diodes(380 nm) are investigated by the temperature-dependent current-voltage measurement first.Three possible transport mechanisms,the space-limited-charge conduction,the variable-range hopping and the Poole-Frenkel emission,are proposed to explain the transport process of the reverse leakage current above 295 K,respectively.With the in-depth investigation,the former two transport mechanisms are excluded.It is found that the experimental data agree well with the Poole-Frenkel emission model.Furthermore,the activation energies of the traps that cause the reverse leakage current are extracted,which are 0.05 eV,0.09 eV,and O.lleV,respectively.This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.展开更多
Perovskite materials show exciting potential for light-emitting diodes(LEDs)owing to their intrinsically high photoluminescence efficiency and color purity.The research focusing on perovskite light-emitting diodes(PeL...Perovskite materials show exciting potential for light-emitting diodes(LEDs)owing to their intrinsically high photoluminescence efficiency and color purity.The research focusing on perovskite light-emitting diodes(PeLEDs)has experienced an exponential growth in the past six years.The maximum external quantum efficiency of red,green,and blue PeLEDs has surpassed 20%,20%,and 10%,respectively.Nevertheless,the current PeLEDs are still in the laboratory stage,and the key for further development of PeLEDs is large-area fabrication.In this paper,we briefly discuss the similarities and differences between manufacturing high-quality and large-area PeLEDs and perovskite solar cells.Especially,the general technologies for fabricating large-area perovskite films are also introduced.The effect of charge transport layers and electrodes on large-area devices are discussed as well.Most importantly,we summarize the advances of large-area(active area≥30 mm^(2))PeLEDs reported since 2017,and describe the methods for optimizing large-area PeLEDs reported in the literature.Finally,the development perspective of PeLEDs is presented for the goal of highly efficient and large-area PeLED fabrication.It is of great significance for the application of PeLEDs in future display and lighting.展开更多
Organic light-emitting diode(OLED)is an electroluminescent technology that relies on charge-carrier dynamics and is a potential light source for variable environmental conditions.Here,by exploiting a self-developed lo...Organic light-emitting diode(OLED)is an electroluminescent technology that relies on charge-carrier dynamics and is a potential light source for variable environmental conditions.Here,by exploiting a self-developed low-temperature testing system,we investigated the characteristics of hole/electron transport,electro-optic conversion efficiency,and operation lifetime of OLEDs at low-temperature ranging from-40℃to 0℃and room temperature(25℃).Compared to devices operating at room temperature,the carrier transport capability is significantly decreased with reducing temperature,and especially the mobility of the hole-transporting material(HTM)and electron-transporting material(ETM)at-40℃decreases from 1.16×10-6 cm2/V·s and 2.60×10-4 cm2/V·s to 6.91×10-9 cm2/V·s and 1.44×10-5 cm2/V·s,respectively.Indeed,the temperature affects differently on the mobilities of HTM and ETM,which favors unbalanced charge-carrier transport and recombination in OLEDs,thereby leading to the maximum current efficiency decreased from 6.46 cd·A-1 at 25℃to 2.74 cd·A-1 at-40℃.In addition,blue fluorescent OLED at-20℃has an above 56%lifetime improvement(time to 80%of the initial luminance)over the reference device at room temperature,which is attributed to efficiently dissipating heat generated inside the device by the low-temperature environment.展开更多
Colloidal Pb Se nanocrystals(NCs)have gained considerable attention due to their efficient carrier multiplication and emissions across near-infrared and short-wavelength infrared spectral ranges.However,the fast degra...Colloidal Pb Se nanocrystals(NCs)have gained considerable attention due to their efficient carrier multiplication and emissions across near-infrared and short-wavelength infrared spectral ranges.However,the fast degradation of colloidal Pb Se NCs in ambient conditions hampers their widespread applications in infrared optoelectronics.It is well-known that the inorganic thick-shell over core improves the stability of NCs.Here,we present the synthesis of Pb Se/Pb S core/shell NCs showing wide spectral tunability,in which the molar ratio of lead(Pb)and sulfur(S)precursors,and the concentration of sulfur and Pb Se NCs in solvent have a significant effect on the efficient Pb S shell growth.The infrared light-emitting diodes(IR-LEDs)fabricated with the Pb Se/Pb S core/shell NCs exhibit an external quantum efficiency(EQE)of 1.3%at 1280 nm.The ligand exchange to optimize the distance between NCs and chloride treatment are important processes for achieving high performance on Pb Se/Pb S NC-LEDs.Our results provide evidence for the promising potential of Pb Se/Pb S NCs over the wide range of infrared optoelectronic applications.展开更多
GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spect...GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.展开更多
The photometric characteristics of high-power white light-emitting diode(LED)devices are investigated.A theoretical model for the luminous efficacy of high-power white LED devices and LED systems is proposed.With the ...The photometric characteristics of high-power white light-emitting diode(LED)devices are investigated.A theoretical model for the luminous efficacy of high-power white LED devices and LED systems is proposed.With the proposed theoretical model,the mechanism of the luminous efficacy decrease is explained.Meanwhile,the model can be used to estimate the luminous efficacy of LEDs under general operation conditions,such as different operation temperatures and injection currents.The wide validity of the luminous efficacy model is experimentally verified through the measurements of different types of LEDs.The experimental results demonstrate a high estimation accuracy.The proposed models not only can be applied to estimate the LED photometric performance,but also is helpful for reliability research of LEDs.展开更多
基金supported by the Science and Technology Program of Shenzhen(Grant Nos.SGDX20201103095607022 and JCYJ20210324095003011)supported by the Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province.
文摘The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.
基金supported by the National Key Research and Development Program of China(Nos.2021YFB3602703,2022YFB3606504,and 2022YFB3602903)National Natural Science Foundation of China(No.62122034)+3 种基金Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting(No.2017KSYS007)Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting(No.ZDSYS201707281632549)Shenzhen Science and Technology Program(No.JCYJ20220818100411025)Shenzhen Development and Reform Commission Project(No.XMHT20220114005)。
文摘The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.
基金the National Natural Science Foundation of China(Grant No.62104085)the Innovation/Entrepreneurship Program of Jiangsu Province,China(Grant No.JSSCTD202146)。
文摘We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.
基金supported by National Key Research and Development Program of China(Nos.2021YFB3602703,2022YFB3606504,and 2022YFB3602903)Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting(No.ZDSYS201707281632549)Shenzhen Science and Technology Program(No.JCYJ20220818100411025)。
文摘Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.
基金the National Natural Science Foundation of China (Grant Nos.61204087, 61306099)the Guangdong Natural Science Foundation (Grant No. S2012040007003)+2 种基金China Postdoctoral Science Foundation (2013M531841)the Fundamental Research Funds for the Central Universities (2014ZM0003, 2014ZM0034, 2014ZM0037, 2014ZZ0028)the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20120172120008)
文摘A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.
基金Project supported by the Production and Research Program of Guangdong Province and Ministry of Education (Grant No.2009B090300338)Guangdong Natural Science Foundation of China (Grant No.8251063101000007)+1 种基金Guangdong Science and Technology Plan of China (Grant No.2008B010200004)the Student Research Project of South China Normal University (Grant No.09XXKC03)
文摘GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated.The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask.The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer.In addition,the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics.The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface,and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.
基金supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.11974063,11904156)Postdoctoral Science Foundation of China(No.2019M653336).The calcu-lations were done at the Center for Computational Science and Engineering of Southern University of Science and Technology(SUSTech).
文摘All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Herein,we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr_(3) QDs by using 2-hexyldecanoic acid(DA)as a ligand to replace the regular oleic acid(OA)ligand.Thanks to the strong binding energy between DA ligand and QDs,the modified QDs not only show a high photoluminescence quantum yield(PLQY)of 96%but also exhibit high stability against ethanol and water.Thereby warm white light-emitting diodes(WLEDs)are constructed by combining lig-and modified CsPbBr_(3) QDs with red AgInZnS QDs on blue emitting InGaN chips,exhibiting a color rendering index of 93,a power efficiency of 64.8 lm/W,a CIE coordinate of(0.44,0.42)and correlated color temperature value of 3018 K.In ad-dition,WLEDs based on ligand modified CsPbBr_(3) QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr_(3) QDs.The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr_(3) QDs are ideal for WLEDs application.
基金supported by Australian Research Council Discovery Project(DP190102252).
文摘The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material.In particular,nanocrystals(NCs)of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications.However,the presence of surface defects on the NCs negatively impacts their performance in devices.Herein,we report a compatible facial post-treatment of CsPbI_(3) nanocrystals using guanidinium iodide(GuI).It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation.As a consequence,the film of treated CsPbI_(3) nanocrystals exhibited significantly enhanced luminescence and charge transport properties,leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8%with high brightness(peak luminance of 7039 cd m^(−2) and a peak current density of 10.8 cd A^(−1)).The EQE is over threefold higher than performance of untreated device(EQE:3.8%).The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min(at current density of 25 mA cm^(−2)),outperforming the untreated devices(T50~6 min).
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA034801)the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University,China(Grant Nos.SKLMT-ZZKT-2017M15 and SKLM-ZZKT-2015Z16)+3 种基金the National Natural Science Foundation of China(Grant Nos.11544010,11374359,11304405,and 1155305)the Natural Science Foundation of Chongqing,China(Grant Nos.cstc2015jcyjA50035 and cstc2015jcyjA1660)the Fundamental Research Funds for the Central Universities,China(Grant Nos.2018CDJDWL0011,106112017CDJQJ328839,106112016CDJZR288805,and 106112015CDJXY300002)the Sharing Fund of Large-Scale Equipment of Chongqing University,China(Grant Nos.201612150094,201712150005,201712150006,and 201712150010)
文摘In order to reduce the Schottky barrier height and sheet resistance between graphene(Gr) and the p-GaN layers in GaN-based light-emitting diodes(LEDs), conductive transparent thin films with large work function are required to be inserted between Gr and p-GaN layers. In the present work, three kinds of transparent conductive oxide(TCO) zinc oxide(ZnO) films, Al-, Ga-, and In-doped ZnO(AZO, GZO, and IZO), are introduced as a bridge layer between Gr and p-GaN,respectively. The influence of different combinations of Gr/ZnO hybrid transparent conducting layers(TCLs) on the optical and thermal characteristics of the GaN-LED was investigated by the finite element method through COMSOL software. It is found that both the TCL transmittance and the surface temperature of the LED chip reduce with the increase in Gr and ZnO thickness. In order to get the transmittance of the Gr/ZnO hybrid TCL higher than 80%, the appropriate combination of Gr/ZnO compound electrode should be a single layer of Gr with ZnO no thicker than 400 nm(1 L Gr/400-nm ZnO),2 L Gr/300-nm ZnO, 3 L Gr/200-nm ZnO, or 4 L Gr/100-nm ZnO. The LEDs with hybrid TCLs consisting of 1 L Gr/300-nm AZO, 2 L Gr/300-nm GZO, and 2 L Gr/300-nm IZO have good performance, among which the one with 1 L Gr/300-nm GZO has the best thermal property. Typically, the temperature of LEDs with 1 L Gr/300-nm GZO hybrid TCLs will drop by about 7 K compared with that of the LEDs with a TCL without ZnO film.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2014AA032608)the National Natural Science Foundation of China(Grant No.61404101)the China Postdoctoral Science Foundation(Grant No.2014M562415)
文摘We have investigated the factors affecting the current spreading length(CSL) in GaN-based light-emitting diodes(LEDs) by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide(ITO) and n-GaN are taken into account for the first time,and a new Q factor is introduced to explain the effects of different current flow paths on the CSL.The calculations and simulations show that the CSL can be enhanced by increasing the thickness of the ITO layer and resistivity of the n-GaN layer,or by reducing the resistivity of the ITO layer and thickness of the n-GaN layer.The results provide theoretical support for calculating the CSL clearly and directly.For vertical-structure LEDs,the effects of resistivity and thickness of the CSL on the internal quantum efficiency(IQE) have been analyzed.The theoretical expression relating current density and the parameters(resistivity and thickness)of the CSL is obtained,and the results are then verified by simulation.The IQE under different current injection conditions is discussed.The effects of CSL resistivity play a key role at high current injection,and there is an optimal thickness for the largest IQE only at a low current injection.
基金the National Key Research and Development Program of China (Grant No. 2016YFF02033604)the Guangdong Natural Science Foundation (Grant Nos. 2014A030310253, 2016A030310360)+2 种基金the Fundamental Research Funds for the Central Universities (Grant No. 2015ZM070)the National Natural Science Foundation of China (Grant No. 51602065)the Guangdong Science and Technology Plan (Grant Nos. 2016A040403037, 2016A010101026)
文摘The interlayer(IL) plays a vital role in hybrid white organic light-emitting diodes(WOLEDs); however,only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time,has been demonstrated to achieve a high efficiency, high color rendering index(CRI), and low voltage trade-off.The device exhibits a maximum total efficiency of 41.5 lm W^(-1), the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs(80–88) at practical luminances(C1000 cd m^(-2)) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V([1 cd m^(-2)), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs.
基金supported by the Industrial Technology Research Grant Program from the New Energy and Industrial Technology Development Organization(NEDO)of Japan
文摘An increase in luminance of a polymer light-emitting diode(PLED) was obtained by fabricating a graded doping structure using a vacuum spray method. The small electron transport molecule, Tris(8-hydroxyquinolinato) aluminum(III)(Alq3), was graded dispersed along the film in the direction of growth in the hole transport polymer poly(3-hexylthiophene-2,5-diyl)(P3HT, regiorandom) layer of the PLED, despite being dissolved in the same organic solvent as the polymer. The PLED reported here, which is composed of a graded structure, emitted brighter light than PLEDs composed of pure polymer or of a blend of active layers prepared by spin coating and/or vacuum spray methods.
基金supported by the National Basic Research Program of China(2013CB933500)National Natural Science Foundation of China(Grant Nos.61422403,51672180,51622306,21673151)+2 种基金Qing Lan ProjectCollaborative Innovation Center of Suzhou Nano Science and Technology(NANO-CIC)the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)
文摘Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm^2V^(-1)s^(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm^2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm^2V^(-1)s^(-1)(average mobility 1.2 cm^2V^(-1)s^(-1)) and 3.0 cm^2V^(-1)s^(-1)(average mobility2.0 cm^2V^(-1)s^(-1)), respectively. They both have a high on/off ratio(I_(on)/I_(off))>10~9. The performance can well satisfy the requirements for light-emitting diodes driving.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61505197 and 61334009the National High-Technology Research and Development Program of China under Grant No 2014AA032604
文摘The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes(LEDs) is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current,which results from the Mg-dopant-related polarization screening.The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region.Light outputs follow the power law L ∝ I^m,with smaller parameter m in the LEDs with less Mg back-diffusion,indicating a lower density of trap states.The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region.Furthermore,the forward current-voltage characteristics are improved.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61334002,61474091,61404097,61574110and 61574112the 111 Project of China under Grant No B12026the Scientific Research Foundation for the Returned Overseas Chinese Scholars of State Education Ministry of China under Grant No JY0600132501
文摘The transport mechanisms of the reverse leakage current in the UV light-emitting diodes(380 nm) are investigated by the temperature-dependent current-voltage measurement first.Three possible transport mechanisms,the space-limited-charge conduction,the variable-range hopping and the Poole-Frenkel emission,are proposed to explain the transport process of the reverse leakage current above 295 K,respectively.With the in-depth investigation,the former two transport mechanisms are excluded.It is found that the experimental data agree well with the Poole-Frenkel emission model.Furthermore,the activation energies of the traps that cause the reverse leakage current are extracted,which are 0.05 eV,0.09 eV,and O.lleV,respectively.This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.
基金Project supported by the Ningxia Key Project of Research and Development Plan(Grant No.2020BDE03013).
文摘Perovskite materials show exciting potential for light-emitting diodes(LEDs)owing to their intrinsically high photoluminescence efficiency and color purity.The research focusing on perovskite light-emitting diodes(PeLEDs)has experienced an exponential growth in the past six years.The maximum external quantum efficiency of red,green,and blue PeLEDs has surpassed 20%,20%,and 10%,respectively.Nevertheless,the current PeLEDs are still in the laboratory stage,and the key for further development of PeLEDs is large-area fabrication.In this paper,we briefly discuss the similarities and differences between manufacturing high-quality and large-area PeLEDs and perovskite solar cells.Especially,the general technologies for fabricating large-area perovskite films are also introduced.The effect of charge transport layers and electrodes on large-area devices are discussed as well.Most importantly,we summarize the advances of large-area(active area≥30 mm^(2))PeLEDs reported since 2017,and describe the methods for optimizing large-area PeLEDs reported in the literature.Finally,the development perspective of PeLEDs is presented for the goal of highly efficient and large-area PeLED fabrication.It is of great significance for the application of PeLEDs in future display and lighting.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61775130 and 11974236)the Science and Technology Commission of Shanghai Municipality Program,China(Grant Nos.19DZ2281000 and 17DZ2281000)the Research Innovation Program for College Graduates of Jiangsu Province,China(Grant Nos.KYCX202545 and KYCX202549)。
文摘Organic light-emitting diode(OLED)is an electroluminescent technology that relies on charge-carrier dynamics and is a potential light source for variable environmental conditions.Here,by exploiting a self-developed low-temperature testing system,we investigated the characteristics of hole/electron transport,electro-optic conversion efficiency,and operation lifetime of OLEDs at low-temperature ranging from-40℃to 0℃and room temperature(25℃).Compared to devices operating at room temperature,the carrier transport capability is significantly decreased with reducing temperature,and especially the mobility of the hole-transporting material(HTM)and electron-transporting material(ETM)at-40℃decreases from 1.16×10-6 cm2/V·s and 2.60×10-4 cm2/V·s to 6.91×10-9 cm2/V·s and 1.44×10-5 cm2/V·s,respectively.Indeed,the temperature affects differently on the mobilities of HTM and ETM,which favors unbalanced charge-carrier transport and recombination in OLEDs,thereby leading to the maximum current efficiency decreased from 6.46 cd·A-1 at 25℃to 2.74 cd·A-1 at-40℃.In addition,blue fluorescent OLED at-20℃has an above 56%lifetime improvement(time to 80%of the initial luminance)over the reference device at room temperature,which is attributed to efficiently dissipating heat generated inside the device by the low-temperature environment.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0401702)the National Natural Science Foundation of China(Grant Nos.61674074 and 61405089)+6 种基金Development and Reform Commission of Shenzhen Project,China(Grant No.[2017]1395)Shenzhen Peacock Team Project,China(Grant No.KQTD2016030111203005)Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant No.ZDSYS201707281632549)Guangdong Province’s Key R&D Program:Micro-LED Display and Ultra-high Brightness Micro-display Technology,China(Grant No.2019B010925001)Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant No.2017KSYS007)Distinguished Young Scholar of National Natural Science Foundation of Guangdong,China(Grant No.2017B030306010)the start-up fund from Southern University of Science and Technology,Shenzhen,China
文摘Colloidal Pb Se nanocrystals(NCs)have gained considerable attention due to their efficient carrier multiplication and emissions across near-infrared and short-wavelength infrared spectral ranges.However,the fast degradation of colloidal Pb Se NCs in ambient conditions hampers their widespread applications in infrared optoelectronics.It is well-known that the inorganic thick-shell over core improves the stability of NCs.Here,we present the synthesis of Pb Se/Pb S core/shell NCs showing wide spectral tunability,in which the molar ratio of lead(Pb)and sulfur(S)precursors,and the concentration of sulfur and Pb Se NCs in solvent have a significant effect on the efficient Pb S shell growth.The infrared light-emitting diodes(IR-LEDs)fabricated with the Pb Se/Pb S core/shell NCs exhibit an external quantum efficiency(EQE)of 1.3%at 1280 nm.The ligand exchange to optimize the distance between NCs and chloride treatment are important processes for achieving high performance on Pb Se/Pb S NC-LEDs.Our results provide evidence for the promising potential of Pb Se/Pb S NCs over the wide range of infrared optoelectronic applications.
基金supported by the National Natural Science Foundation of China (Grant No. 51172079)the Science and Technology Program of Guangdong Province,China (Grant Nos. 2010B090400456 and 2010A081002002)the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018)
文摘GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51307113 and 51407124the Natural Science Foundation of Jiangsu Province under Grant No BK20130307
文摘The photometric characteristics of high-power white light-emitting diode(LED)devices are investigated.A theoretical model for the luminous efficacy of high-power white LED devices and LED systems is proposed.With the proposed theoretical model,the mechanism of the luminous efficacy decrease is explained.Meanwhile,the model can be used to estimate the luminous efficacy of LEDs under general operation conditions,such as different operation temperatures and injection currents.The wide validity of the luminous efficacy model is experimentally verified through the measurements of different types of LEDs.The experimental results demonstrate a high estimation accuracy.The proposed models not only can be applied to estimate the LED photometric performance,but also is helpful for reliability research of LEDs.
