Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integr...Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integration compared with conventional bulk lithium niobate modulator.However,because the electrode gap of the lithium niobate film modulator is very narrow,when the microwave frequency gets higher,it leads to higher microwave loss,and the electro-optical performance of the modulator will be greatly reduced.Here,we propose a thin film lithium niobate electro-optic modulator with a bimetallic layer electrode structure to achieve microwave loss less than 8 dB/cm in the range of 200 GHz,exhibiting a voltage-length product of 1.1 V·cm and a 3 dB electro-optic bandwidth greater than 160 GHz.High-speed data transmission test has been performed,showing good performance.展开更多
The Mach-Zehnder traveling-wave lithium niobate modulator is simulated by time domain finite difference (FDTD) method for different device geometry. The result is comparable to the reported value by finite element met...The Mach-Zehnder traveling-wave lithium niobate modulator is simulated by time domain finite difference (FDTD) method for different device geometry. The result is comparable to the reported value by finite element method.展开更多
基金supported by the Self-deployment Project of Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(No.2021ZZ104)the Fujian Province STS Project(Nos.2020T3002 and 2022T3012)。
文摘Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integration compared with conventional bulk lithium niobate modulator.However,because the electrode gap of the lithium niobate film modulator is very narrow,when the microwave frequency gets higher,it leads to higher microwave loss,and the electro-optical performance of the modulator will be greatly reduced.Here,we propose a thin film lithium niobate electro-optic modulator with a bimetallic layer electrode structure to achieve microwave loss less than 8 dB/cm in the range of 200 GHz,exhibiting a voltage-length product of 1.1 V·cm and a 3 dB electro-optic bandwidth greater than 160 GHz.High-speed data transmission test has been performed,showing good performance.
文摘The Mach-Zehnder traveling-wave lithium niobate modulator is simulated by time domain finite difference (FDTD) method for different device geometry. The result is comparable to the reported value by finite element method.
