Radio-frequency(RF)micro-electro-mechanical-system(MEMS)switches are widely used in communication devices and test instruments.In this paper,we demonstrate the structural design and optimization of a novel RF MEMS swi...Radio-frequency(RF)micro-electro-mechanical-system(MEMS)switches are widely used in communication devices and test instruments.In this paper,we demonstrate the structural design and optimization of a novel RF MEMS switch with a straight top electrode.The insertion loss,isolation,actuator voltage,and stress distribution of the switch are optimized and explored simultaneously by HFSS and COMSOL software,taking into account both its RF and mechanical properties.Based on the optimized results,a switch was fabricated by a micromachining process compatible with conventional IC processes.The RF performance in the DC to 18 GHz range was measured with a vector network analyzer,showing isolation of more than 21.28 dB over the entire operating frequency range.Moreover,the required actuation voltage was about 9.9 V,and the switching time was approximately 33μs.A maximum lifetime of 109 switching cycles was obtained.Additionally,the dimension of the sample is 1.8 mm×1.8 mm×0.3 mm,which might find application in the current stage.展开更多
A DC to 5GHz series MEMS switch is designed and fabricated for wireless communication applications,and thermal effect and power handling of the series switch are discussed.The switch is made on glass substrate,and gol...A DC to 5GHz series MEMS switch is designed and fabricated for wireless communication applications,and thermal effect and power handling of the series switch are discussed.The switch is made on glass substrate,and gold platinum contact is used to get a stable and little insert loss.From DC to 5GHz,0 6dB insertion loss,30dB isolation,and 30μs delay are demonstrated.Thermal effect of the switch is tested in 85℃ and -55℃ atmosphere separately.From DC to 4GHz,the insert loss of the switch increases 0 2dB in 85℃ and 0 4dB in -55℃,while the isolation holds the same value as that in room temperature.To measure the power handling capability of the switch,we applied a continuous RF power increasing from 10dBm to 35 1dBm with the step of 1 0dBm across the switch at 4GHz.The switch keeps working and shows a decrease of the insert loss for 0 1～0 6dB.The maximum continuous power handling (35 1dBm,about 3 24W) is higer than the reported value of shunt switch (about 420mW),which implies series switches have much better power handling capability.展开更多
A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in de...A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.展开更多
The improvements of the design and the compatibility with silicon IC of RF MEMS switch are presented.The compatibility with silicon IC is realized by dielectric isolation technology,and the decrease of the pull voltag...The improvements of the design and the compatibility with silicon IC of RF MEMS switch are presented.The compatibility with silicon IC is realized by dielectric isolation technology,and the decrease of the pull voltage of the switch is done by etching some holes on the metal membrane.The preliminary test results are as follows: C off and C on are 0 32pF,6pF,respectively;the pull down voltage is about 25V.The package of the RF MEMS switch is done by micro stripline,and the isolation and the insertion loss are 35dB,2dB,respectively at 1 5GHz;the switching speed is about 3μs by oscilloscope.展开更多
This paper details the design and simulation of a novel low-loss four-bit reconfigurable bandpass filter that integrates microelectromechanical system(MEMS)switches and comb resonators.A T-shaped reconfigurable resona...This paper details the design and simulation of a novel low-loss four-bit reconfigurable bandpass filter that integrates microelectromechanical system(MEMS)switches and comb resonators.A T-shaped reconfigurable resonator is reconfigured in a'one resonator,multiple MEMS switches'configuration and used to gate the load capacitances of comb resonators so that a multiple-frequency filtering function is realized within the 7-16 GHz frequency range.In addition,the insertion loss of the filter is less than 1.99 dB,the out-of-band rejection is more than 18.30 dB,and the group delay is less than 0.25 ns.On the other hand,the size of this novel filter is only 4.4 mm×2.5 mm×0.4 mm.Our results indicate that this MEMS reconfigurable filter,which can switch 16 central frequency bands through eight switches,achieves a low insertion loss compared to those of traditional MEMS filters.In addition,the advantages of small size are obtained while achieving high integration.展开更多
An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam an...An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.展开更多
The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air arou...The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air around the MEMS switch membrane. An analytical expression that approximately computes the displacement induced by outside shock is obtained. According to the expression, the minimum required mechanical stiffness constant of an MEMS switch beam in some maximum tolerated insertion loss condition and some external inertial shock environment or the insertion loss induced by external inertial shock can also be obtained. The influence is also illustrated with an RF MEMS capacitive switch example,which shows that outside environment factors have to be taken into account when designing RF MEMS capacitive switches working in low vacuum. While encapsulating RF MEMS switches in low vacuum diminishes the air damping and improves the switch speed and operation voltage,the performances of a switch is incident to being influenced by outside environment. This study is very useful for the optimized design of RF MEMS capacitive switches working in low vacuum.展开更多
We proposed an optical true time delay (TTD) for phased array antennas (PAAs) composed of 2×2 optical MEMS switches, single-mode fiber delay lines, and a fixed wavelength laser diode. A 3-bit TTD for 10 GHz PAAs ...We proposed an optical true time delay (TTD) for phased array antennas (PAAs) composed of 2×2 optical MEMS switches, single-mode fiber delay lines, and a fixed wavelength laser diode. A 3-bit TTD for 10 GHz PAAs was implemented with a time delay error less than ± 0.2 ps.展开更多
Abnormal voltages such as electrostatic,constant current,and strong electromagnetic signals can erroneously trigger operation of MEMS pyrotechnics and control systems in a fuze,which may result in casualties.This stud...Abnormal voltages such as electrostatic,constant current,and strong electromagnetic signals can erroneously trigger operation of MEMS pyrotechnics and control systems in a fuze,which may result in casualties.This study designs a solid-state micro-scale switch by combining the corona gas discharge theory of asymmetric electric fields and Peek’s Law.The MEMS switch can be transferred from“off”to“on”through the gas breakdown between the corona electrodes.In the model,one of the two electrodes is spherical and the other flat,so a non-uniform electric field is formed around the electrodes.The theoretical work is as follows.First,the relation among the radius of curvature of the spherical electrode,the discharge gap,and the air breakdown voltage is obtained;to meet the low voltage(30-60 V)required to drive the MEMS switch,the radius of curvature of the spherical electrode needs to be 10 e50 mm and the discharge gap between the two electrodes needs to be 9e11 mm.Second,the optimal ratioεis introduced to parameterize the model.Finally,the corona discharge structural parameters are determined by comparing the theoretical and electric field simulation results.The switch is then fabricated via MEMS processing.A hardware test platform is built and the performing chip tested.It is found that when the electrode gap is 9 mm,the electrostatic voltage is at least 37.3 V,with an error of 2.6%between the actual and theoretical air breakdown voltages.When the electrode gap is 11 mm,the electrostatic voltage is at least 42.3 V,with an error of 10.5%between the actual and theoretical air breakdown voltages.Both cases meet the design requirements.展开更多
Novel MEMS torsion-mirror actuators with monolithically integrated fiber self-holding structures are fabricated, and investigated experimentally and theoretically. Their electromechanical and optical characteristics a...Novel MEMS torsion-mirror actuators with monolithically integrated fiber self-holding structures are fabricated, and investigated experimentally and theoretically. Their electromechanical and optical characteristics are acceptable for optical switching or attenuating applications.展开更多
With increasing challenges towards continued scaling and improve-ment in performance faced by electronic computing,mechanical com-puting has started to attract growing interests.Taking advantage of the mechanical degr...With increasing challenges towards continued scaling and improve-ment in performance faced by electronic computing,mechanical com-puting has started to attract growing interests.Taking advantage of the mechanical degree of freedom in solid state devices,micro/nano-electromechanical systems(MEMS/NEMS)could provide alternative solutions for future computing and memory systems with ultralow power consumption,compatibility with harsh environments,and high reconfigurability.In this review,MEMS/NEMS-enabled memories and logic processors were surveyed,and the prospects and challenges for future on-chip mechanical computing were also analyzed.展开更多
基金supported by the Equipment Development Department of the New Product Project,the Shanxi Province Postgraduate Education Reform Project,the Double First-Class Disciplines,the National First-class Curriculum Construction,and the Province Future Technology Project (Grant Nos.2019XW0010,11012103,11012133,11013168,and 11013169).
文摘Radio-frequency(RF)micro-electro-mechanical-system(MEMS)switches are widely used in communication devices and test instruments.In this paper,we demonstrate the structural design and optimization of a novel RF MEMS switch with a straight top electrode.The insertion loss,isolation,actuator voltage,and stress distribution of the switch are optimized and explored simultaneously by HFSS and COMSOL software,taking into account both its RF and mechanical properties.Based on the optimized results,a switch was fabricated by a micromachining process compatible with conventional IC processes.The RF performance in the DC to 18 GHz range was measured with a vector network analyzer,showing isolation of more than 21.28 dB over the entire operating frequency range.Moreover,the required actuation voltage was about 9.9 V,and the switching time was approximately 33μs.A maximum lifetime of 109 switching cycles was obtained.Additionally,the dimension of the sample is 1.8 mm×1.8 mm×0.3 mm,which might find application in the current stage.
文摘A DC to 5GHz series MEMS switch is designed and fabricated for wireless communication applications,and thermal effect and power handling of the series switch are discussed.The switch is made on glass substrate,and gold platinum contact is used to get a stable and little insert loss.From DC to 5GHz,0 6dB insertion loss,30dB isolation,and 30μs delay are demonstrated.Thermal effect of the switch is tested in 85℃ and -55℃ atmosphere separately.From DC to 4GHz,the insert loss of the switch increases 0 2dB in 85℃ and 0 4dB in -55℃,while the isolation holds the same value as that in room temperature.To measure the power handling capability of the switch,we applied a continuous RF power increasing from 10dBm to 35 1dBm with the step of 1 0dBm across the switch at 4GHz.The switch keeps working and shows a decrease of the insert loss for 0 1～0 6dB.The maximum continuous power handling (35 1dBm,about 3 24W) is higer than the reported value of shunt switch (about 420mW),which implies series switches have much better power handling capability.
文摘A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.
文摘The improvements of the design and the compatibility with silicon IC of RF MEMS switch are presented.The compatibility with silicon IC is realized by dielectric isolation technology,and the decrease of the pull voltage of the switch is done by etching some holes on the metal membrane.The preliminary test results are as follows: C off and C on are 0 32pF,6pF,respectively;the pull down voltage is about 25V.The package of the RF MEMS switch is done by micro stripline,and the isolation and the insertion loss are 35dB,2dB,respectively at 1 5GHz;the switching speed is about 3μs by oscilloscope.
基金Project supported by the National Defense Technology Industry Strong Foundation Project of China (Grant No. JCKY2018* * **06)the Information System New items Project (Grant Nos. 2018****26 and 2019****10)the Key Laboratory of Instrumentation Science and Dynamic Measurement for their support
文摘This paper details the design and simulation of a novel low-loss four-bit reconfigurable bandpass filter that integrates microelectromechanical system(MEMS)switches and comb resonators.A T-shaped reconfigurable resonator is reconfigured in a'one resonator,multiple MEMS switches'configuration and used to gate the load capacitances of comb resonators so that a multiple-frequency filtering function is realized within the 7-16 GHz frequency range.In addition,the insertion loss of the filter is less than 1.99 dB,the out-of-band rejection is more than 18.30 dB,and the group delay is less than 0.25 ns.On the other hand,the size of this novel filter is only 4.4 mm×2.5 mm×0.4 mm.Our results indicate that this MEMS reconfigurable filter,which can switch 16 central frequency bands through eight switches,achieves a low insertion loss compared to those of traditional MEMS filters.In addition,the advantages of small size are obtained while achieving high integration.
基金supported by the National Natural Science Foundation of China(Nos.51505089 and61204116)the Opening Project of the Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Nos.ZHD201207 and 9140C030605140C03015)the Pearl River S&T Nova Program of Guangzhou(No.2014J2200086)
文摘An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.
文摘The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air around the MEMS switch membrane. An analytical expression that approximately computes the displacement induced by outside shock is obtained. According to the expression, the minimum required mechanical stiffness constant of an MEMS switch beam in some maximum tolerated insertion loss condition and some external inertial shock environment or the insertion loss induced by external inertial shock can also be obtained. The influence is also illustrated with an RF MEMS capacitive switch example,which shows that outside environment factors have to be taken into account when designing RF MEMS capacitive switches working in low vacuum. While encapsulating RF MEMS switches in low vacuum diminishes the air damping and improves the switch speed and operation voltage,the performances of a switch is incident to being influenced by outside environment. This study is very useful for the optimized design of RF MEMS capacitive switches working in low vacuum.
文摘We proposed an optical true time delay (TTD) for phased array antennas (PAAs) composed of 2×2 optical MEMS switches, single-mode fiber delay lines, and a fixed wavelength laser diode. A 3-bit TTD for 10 GHz PAAs was implemented with a time delay error less than ± 0.2 ps.
文摘Abnormal voltages such as electrostatic,constant current,and strong electromagnetic signals can erroneously trigger operation of MEMS pyrotechnics and control systems in a fuze,which may result in casualties.This study designs a solid-state micro-scale switch by combining the corona gas discharge theory of asymmetric electric fields and Peek’s Law.The MEMS switch can be transferred from“off”to“on”through the gas breakdown between the corona electrodes.In the model,one of the two electrodes is spherical and the other flat,so a non-uniform electric field is formed around the electrodes.The theoretical work is as follows.First,the relation among the radius of curvature of the spherical electrode,the discharge gap,and the air breakdown voltage is obtained;to meet the low voltage(30-60 V)required to drive the MEMS switch,the radius of curvature of the spherical electrode needs to be 10 e50 mm and the discharge gap between the two electrodes needs to be 9e11 mm.Second,the optimal ratioεis introduced to parameterize the model.Finally,the corona discharge structural parameters are determined by comparing the theoretical and electric field simulation results.The switch is then fabricated via MEMS processing.A hardware test platform is built and the performing chip tested.It is found that when the electrode gap is 9 mm,the electrostatic voltage is at least 37.3 V,with an error of 2.6%between the actual and theoretical air breakdown voltages.When the electrode gap is 11 mm,the electrostatic voltage is at least 42.3 V,with an error of 10.5%between the actual and theoretical air breakdown voltages.Both cases meet the design requirements.
文摘Novel MEMS torsion-mirror actuators with monolithically integrated fiber self-holding structures are fabricated, and investigated experimentally and theoretically. Their electromechanical and optical characteristics are acceptable for optical switching or attenuating applications.
基金We gratefully acknowledge the support from National Natural Science Foundation of China(Grants 62250073,U21A20505,U21A20459,62150052,62104029,12104086,62004026,62004032,62104140)Sichuan Science and Technology Program(Grants 2021YJ0517,2021JDTD0028)+2 种基金Fundamental Research Funds for the Central Universities(ZYGX2020ZB014 and ZYGX2020J029)Lingang Laboratory Open Re-search Fund(Grant LG-QS-202202-11)Biren Technology-Shanghai Jiao Tong University Joint Laboratory Open Research Fund,and Science and Technology Commission of Shanghai Municipality(STCSM)Natural Science Project General Program(Grant 21ZR1433800).
文摘With increasing challenges towards continued scaling and improve-ment in performance faced by electronic computing,mechanical com-puting has started to attract growing interests.Taking advantage of the mechanical degree of freedom in solid state devices,micro/nano-electromechanical systems(MEMS/NEMS)could provide alternative solutions for future computing and memory systems with ultralow power consumption,compatibility with harsh environments,and high reconfigurability.In this review,MEMS/NEMS-enabled memories and logic processors were surveyed,and the prospects and challenges for future on-chip mechanical computing were also analyzed.
