An asymmetric MOSFET-C band-pass filter （BPF） with on chip charge pump auto-tuning is presented. It is implemented in UMC （United Manufacturing Corporation） 0.18 μm CMOS process technology. The filter system with...An asymmetric MOSFET-C band-pass filter （BPF） with on chip charge pump auto-tuning is presented. It is implemented in UMC （United Manufacturing Corporation） 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point （ⅡP3） is 16.621 dBm, with 50Ω as the source impedance. The input referred noise is about 47.455 μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm2 and it can be utilized in GPS （global positioning system） and Bluetooth systems.展开更多
A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.T...A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.This proposed implementation relies on the tunability of current-steering MOS transistors operating in the triode region counteracting the concert deviation of resistor in the integrated circuit manufacturing technology in orde r that the group delay of Bessel active filter could be designed accurately.The amplifier is not only with voltage common-mode negative feedback,but also with current common-mode negative feedback,which will benefit for the stability of its D C operating point.0.75μs group delay fourth-order Bessel lowpass filter,whic h is synthesized according to passive doubly terminated RLC prototype lowpass filter,demonstrates better than -65dB THD using 100kHz,2.5V pp signal in Taiwan UMC 2P2M(2-poly,2-metal)5.0V,0.5μm CMOS technology.展开更多
本文提出了适用于医学领域的R-MOSFET-C滤波器,采用MOSFET代替传统RC有源滤波器中的电阻,实现可调、超低截止频率。该滤波器采用UMC 0.13 m CMOS工艺,电源电压为1.2V。仿真结果显示,当外部可调电压,即MOSFET的栅电压在0.6V到0.84V之间...本文提出了适用于医学领域的R-MOSFET-C滤波器,采用MOSFET代替传统RC有源滤波器中的电阻,实现可调、超低截止频率。该滤波器采用UMC 0.13 m CMOS工艺,电源电压为1.2V。仿真结果显示,当外部可调电压,即MOSFET的栅电压在0.6V到0.84V之间变化时,截止频率可随之在0.2Hz到292.8Hz之间变化。展开更多
SiC MOSFET凭借着低开关损耗、高工作频率与高工作温度点等优点,逐渐在高效率、高功率密度与高温的应用场合取代传统的硅功率器件。然而,在高速开关中带来的栅极串扰现象严重制约SiC器件的开关速度。传统的串扰抑制方法重点关注由栅极...SiC MOSFET凭借着低开关损耗、高工作频率与高工作温度点等优点,逐渐在高效率、高功率密度与高温的应用场合取代传统的硅功率器件。然而,在高速开关中带来的栅极串扰现象严重制约SiC器件的开关速度。传统的串扰抑制方法重点关注由栅极–漏极寄生电容引入的干扰电压,往往通过减小驱动回路阻抗的方式来降低串扰电压。该文基于SiC MOSFET器件的开关模态,提出考虑共源电感的分段线性化串扰电压模型。该模型基于器件数据手册及双脉冲实验提取的参数,考虑栅极–漏极电容、共源电感、体二极管反向恢复等非理想因素的影响。对比不同电压点、电流点与电阻值下实验与模型的输出结果。该模型表明,串扰电压是由器件栅极–漏极电容、共源电感与驱动回路阻抗共同作用的结果。单一降低驱动回路阻抗的方式对串扰电压的抑制效果有限。基于提出的模型,该文给出串扰电压抑制的指导方法,可直接用于SiC MOSFET驱动电路的设计。展开更多
文摘An asymmetric MOSFET-C band-pass filter （BPF） with on chip charge pump auto-tuning is presented. It is implemented in UMC （United Manufacturing Corporation） 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point （ⅡP3） is 16.621 dBm, with 50Ω as the source impedance. The input referred noise is about 47.455 μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm2 and it can be utilized in GPS （global positioning system） and Bluetooth systems.
文摘A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.This proposed implementation relies on the tunability of current-steering MOS transistors operating in the triode region counteracting the concert deviation of resistor in the integrated circuit manufacturing technology in orde r that the group delay of Bessel active filter could be designed accurately.The amplifier is not only with voltage common-mode negative feedback,but also with current common-mode negative feedback,which will benefit for the stability of its D C operating point.0.75μs group delay fourth-order Bessel lowpass filter,whic h is synthesized according to passive doubly terminated RLC prototype lowpass filter,demonstrates better than -65dB THD using 100kHz,2.5V pp signal in Taiwan UMC 2P2M(2-poly,2-metal)5.0V,0.5μm CMOS technology.
文摘本文提出了适用于医学领域的R-MOSFET-C滤波器,采用MOSFET代替传统RC有源滤波器中的电阻,实现可调、超低截止频率。该滤波器采用UMC 0.13 m CMOS工艺,电源电压为1.2V。仿真结果显示,当外部可调电压,即MOSFET的栅电压在0.6V到0.84V之间变化时,截止频率可随之在0.2Hz到292.8Hz之间变化。
