N＋N nominal sentence is an important structure type of nominal sentences in Mandarin Chinese. Attributive-center, combination, apposition and subject-predicate are its main structure types. In main literary genres, ...N＋N nominal sentence is an important structure type of nominal sentences in Mandarin Chinese. Attributive-center, combination, apposition and subject-predicate are its main structure types. In main literary genres, the distribution of N＋N nominal sentence shows a certain trend of dominant hierarchy： poem﹥drama﹥novel﹥prose. No matter what kind of literary genres, attributive-center structure is the type with maximum quantity, while appositive structure is the type with minimum quantity. Statistical result indicates that most of N＋N nominal sentence is nominal and its use is limited by genres. Function of N＋N nominal sentence is textual. When it comes to discourse, it can be used as theme, rheme and dual identity of theme and rheme based on the theory of Theme-Rheme （T-R） structure pattern. It does not only construct the information structure to deliver textual information, but also its a vital means of discourse cohesion and coherence.展开更多
In this letter, using a Baecklund transformation and the new variableseparation approach, we find a new general solution of the (N+1)-dimensional Burgers system. Theform of the universal formula obtained from many (2+...In this letter, using a Baecklund transformation and the new variableseparation approach, we find a new general solution of the (N+1)-dimensional Burgers system. Theform of the universal formula obtained from many (2+1)-dimensional system is extended.展开更多
The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K...The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.展开更多
文摘N＋N nominal sentence is an important structure type of nominal sentences in Mandarin Chinese. Attributive-center, combination, apposition and subject-predicate are its main structure types. In main literary genres, the distribution of N＋N nominal sentence shows a certain trend of dominant hierarchy： poem﹥drama﹥novel﹥prose. No matter what kind of literary genres, attributive-center structure is the type with maximum quantity, while appositive structure is the type with minimum quantity. Statistical result indicates that most of N＋N nominal sentence is nominal and its use is limited by genres. Function of N＋N nominal sentence is textual. When it comes to discourse, it can be used as theme, rheme and dual identity of theme and rheme based on the theory of Theme-Rheme （T-R） structure pattern. It does not only construct the information structure to deliver textual information, but also its a vital means of discourse cohesion and coherence.
文摘In this letter, using a Baecklund transformation and the new variableseparation approach, we find a new general solution of the (N+1)-dimensional Burgers system. Theform of the universal formula obtained from many (2+1)-dimensional system is extended.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11675020,11375028,11075018 and 10675023
文摘The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.
