The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier eff...The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier effects.Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.Based on these results,the influence of channel hot carriers on SOI NMOSFET's front-chan nel properties is investigated.A power time dependence extrapolation technique i s proposed to predict the device's lifetime.Experimental results show that the N MOSFET's degradation is caused by the hot-holes,which are injected into the gat e oxide from the drain and then trapped near the drain side.However,the electron s trapped in the gate oxide can accelerate the gate breakdown.The two simultaneo us breakages of Si-O bonds at a Si atom lead to the irreversible relaxation of the oxide network.A novel physical mechanism of channel hot-carrier-induced ga te oxide breakdown is also presented.展开更多
Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect ...Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.展开更多
文摘The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier effects.Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.Based on these results,the influence of channel hot carriers on SOI NMOSFET's front-chan nel properties is investigated.A power time dependence extrapolation technique i s proposed to predict the device's lifetime.Experimental results show that the N MOSFET's degradation is caused by the hot-holes,which are injected into the gat e oxide from the drain and then trapped near the drain side.However,the electron s trapped in the gate oxide can accelerate the gate breakdown.The two simultaneo us breakages of Si-O bonds at a Si atom lead to the irreversible relaxation of the oxide network.A novel physical mechanism of channel hot-carrier-induced ga te oxide breakdown is also presented.
基金Supported by the National Defense Preresearch Fund Program(No.99J8.1.1.DZD132)
文摘Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.
