Advancing high-voltage stability of layered sodium-ion oxides represents a pivotal avenue for their progress in energy storage applications.Despite this,a comprehensive understanding of the mechanisms underpinning the...Advancing high-voltage stability of layered sodium-ion oxides represents a pivotal avenue for their progress in energy storage applications.Despite this,a comprehensive understanding of the mechanisms underpinning their structural deterioration at elevated voltages remains insufficiently explored.In this study,we unveil a layer delamination phenomenon of Na_(0.67)Ni_(0.3)Mn_(0.7)O_(2)(NNM)within the 2.0-4.3 V voltage,attributed to considerable volumetric fluctuations along the c-axis and lattice oxygen reactions induced by the simultaneous Ni^(3+)/Ni^(4+)and anion redox reactions.By introducing Mg doping to diminished Ni-O antibonding,the anion oxidation-reduction reactions are effectively mitigated,and the structural integrity of the P2 phase remains firmly intact,safeguarding active sites and precluding the formation of novel interfaces.The Na_(0.67)Mg_(0.05)Ni_(0.25)Mn_(0.7)O_(2)(NMNM-5)exhibits a specific capacity of100.7 mA h g^(-1),signifying an 83%improvement compared to the NNM material within the voltage of2.0-4.3 V.This investigation underscores the intricate interplay between high-voltage stability and structural degradation mechanisms in layered sodium-ion oxides.展开更多
Mg_(3)Sb_(2)has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg_(3)Sb_(2),the dimensionless figure of merit(zT)of p-type Mg...Mg_(3)Sb_(2)has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg_(3)Sb_(2),the dimensionless figure of merit(zT)of p-type Mg_(3)Sb_(2)remains lower than 1,which is mainly attributed to its inferior electrical properties.Herein,we synergistically optimize the thermoelectric properties of p-type Mg_(3)Sb_(2)materials via codoping of Cd and Ag,which were synthesized by high-energy ball milling combined with hot pressing.It is found that Cd doping not only increases the carrier mobility of p-type Mg_(3)Sb_(2),but also diminishes its thermal conductivity(κ_(tot)),with Mg_(2.85)Cd_(0.5)Sb_(2)achieving a lowκtot value of∼0.67 W m^(−1)K^(−1)at room temperature.Further Ag doping elevates the carrier concentration,so that the power factor is optimized over the entire temperature range.Eventually,a peak zT of∼0.75 at 773 K and an excellent average zT of∼0.41 over 300−773 K are obtained in Mg_(2.82)Ag_(0.03)Cd_(0.5)Sb_(2),which are∼240%and∼490%higher than those of pristine Mg_(3.4)Sb_(2),respectively.This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg_(3)Sb_(2)by codoping Cd and Ag,which is beneficial to the future applications of Mg_(3)Sb_(2)-based thermoelectric materials.展开更多
Tetradymite-structured chalcogenides,such as Bi_(2)Te_(3) and Sb_(2)Te_(3),are quasi-two-dimensional(2D)layered compounds,which are significant thermoelectric materials applied near room temperature.The intercalation ...Tetradymite-structured chalcogenides,such as Bi_(2)Te_(3) and Sb_(2)Te_(3),are quasi-two-dimensional(2D)layered compounds,which are significant thermoelectric materials applied near room temperature.The intercalation of guest species in van der Waals(vdW)gap implemented for tunning properties has attracted much attention in recent years.We attempt to insert Ga atoms in the vdW gap between the Te layers in p-type Bi_(0.3)Sb_(1.7)Te_(3)(BST)for further improving thermoelectrics.The vdW-related defects(including extrinsic interstitial and intrinsic defects)induced by Ga intercalation can not only modulate the carrier concentration but also enhance the texture,thereby yielding excellent electrical properties,which are reflected in the power factor PF~4.43 mW·m^(-1)·K^(-2).Furthermore,the intercalation of Ga produces multi-scale lattice imperfections such as point defects,Te precipitations,and nanopores,realizing the low lattice thermal conductivity in BST-Ga samples.Ultimately,a peak zT~1.1 at 373 K is achieved in the BST-1%Ga sample and greatly improved by~22%compared to the pristine BST.The weak bonding of vdW interlayer interaction can boost the synergistic effect for advancing BST-based or other layered thermoelectrics.展开更多
Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and...Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.展开更多
AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory ...AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.展开更多
Zinc oxide(ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-...Zinc oxide(ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent(2011-now) research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.展开更多
The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct...The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique.展开更多
In this work, we study the influence of carrier gas H_2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effec...In this work, we study the influence of carrier gas H_2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H_2 flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H_2 flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.展开更多
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ...In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.展开更多
Pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFe_2O_4 have been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-v...Pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFe_2O_4 have been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis diffuse reflectance spectra and Mott–Schottky plots show that the band structure of the CaFe_2O_4 nanorods is narrower than that of the CaFe_2O_4 nanoparticles synthesized by conventional method. The enhancement of the visible-light absorption is due to narrowness of the band gap in CaFe_2O_4 nanorods. The appropriate ratio between the molten salt and the CaFe_2O_4 precursors plays an important role in inhibiting the growth of the crystals along the(201) plane to give the desired nanorod morphology. This work not only demonstrates that highly pure p-type CaFe_2O_4 semiconductor with tunable band structure and morphology could be obtained using the molten salt strategy, but also affirms that the bandgap of a semiconductor may be tunable by monitoring the growth of a particular crystal plane.Furthermore, the facile eutectic molten salt method developed in this work may be further extended to fabricate some other semiconductor nanomaterials with a diversity of morphologies.展开更多
In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equat...In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped Ga As.展开更多
The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measure...The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease,while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated.Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.展开更多
Strained-Si_(0.73)Ge_(0.27) channels are successfully integrated with high-κ/metal gates in p-type metal-oxide- semiconductor field effect transistors(pMOSFETs) using the replacement post-gate process.A silicon cap a...Strained-Si_(0.73)Ge_(0.27) channels are successfully integrated with high-κ/metal gates in p-type metal-oxide- semiconductor field effect transistors(pMOSFETs) using the replacement post-gate process.A silicon cap and oxide inter layers are inserted between Si_(0.73)Ge_(0.27) and high-κ dielectric to improve the interface.The fabricated Si_(0.73) Ge_(0.27) pMOSFETs with gate length of 30 nm exhibit good performance with high drive current(~428μA/μm at V_(DD) = 1 V) and suppressed short-channel effects(DIBL^77mV/V and SS^90mV/decade).It is found that the enhancement of effective hole mobility is up to 200%in long-gate-length Si_(0.73) Ge_(0.27)-channel pMOSFETs compared with the corresponding silicon transistors.The improvement of device performance is reduced due to strain relaxation as the gate length decreases,while 26%increase of the drive current is still obtained for 30-nm-gate-length Si_(0.73)Ge_(0.27) devices.展开更多
Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconduc...Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi_(2)Sr_(2)CaCu_(2)O_(y) thin films. In this study, epitaxial superconducting Bi_(2)Sr_(2)CuO_(y) and Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin films with superior normal state conductivity are proposed as ptype transparent conductors. It is found that the Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.展开更多
Using hybrid density functional calculation,we study the atomic and electronic structures of p-type dopants,B,Al and Ga,in 4H-SiC.For B,depending on the growth condition,it can occupy both Si and C sites.In contrast,A...Using hybrid density functional calculation,we study the atomic and electronic structures of p-type dopants,B,Al and Ga,in 4H-SiC.For B,depending on the growth condition,it can occupy both Si and C sites.In contrast,Al and Ga on the C sites exhibit too high formation energy to exist in a significant amount.In 4H-SiC,there exist two types of Si sites in wurtzite-like and zincblende-like local coordination,respectively.Our calculations suggest that the dopant atoms have negligible preference occupying the two sites.In neutral charge state,all the dopants exhibit significant distortions from the structure in the negatively charged state.For most cases,our calculations yield three distorted structures,in which the most stable one has the dopant atom displaced along its bond with one of the surrounding equatorial Si or C atoms,lowering the C_(3v) symmetry to C_(s) symmetry(i.e.,a mirror symmetry only).Among the three dopant elements,Al on Si sites exhibits overall the lowest formation energy and the shallowest acceptor level.Nevertheless,it is not a hydrogenic dopant with the acceptor level 0.12 eV above the valence band maximum based on calculation using a 400-atom supercell.Its corresponding defect state exhibits apparent localization along the[0001]direction,but it is relatively delocalized in the(0001)plane.展开更多
With the rapid exhaustion of fossil energy, the demand for clean and renewable energy is urgently growing. Thermoelectric(TE) materials, which can directly convert waste heat into electrical energy, are attracting gre...With the rapid exhaustion of fossil energy, the demand for clean and renewable energy is urgently growing. Thermoelectric(TE) materials, which can directly convert waste heat into electrical energy, are attracting great attention to address the energy crisis [1–3].展开更多
A novel Sr2CuInO3 S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type se...A novel Sr2CuInO3 S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type semiconductor character of the synthesized Sr2CuInO3 S was confirmed by Hall efficient measurement and Mott-Schottky plot analysis. First-principles density functional theory calculations(DFT) and electrochemical measurements were performed to elucidate the electronic structure and the energy band locations. It was found that the as-synthesized Sr2CuInO3 S photocatalyst has appreciate conduction and valence band positions for hydrogen and oxygen evolution, respectively. Photocatalytic hydrogen production experiments under a visible light irradiation(λ>420 nm) were carried out by loading different metal and metal-like cocatalysts on Sr2CuInO3 S and Rh was found to be the best one among the tested ones.展开更多
Zinc oxide (ZnO) is a wide band-gap material of the II-VI group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite it...Zinc oxide (ZnO) is a wide band-gap material of the II-VI group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carried out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.展开更多
基金the financial support from the National Natural Science Foundation of China(52202338)。
文摘Advancing high-voltage stability of layered sodium-ion oxides represents a pivotal avenue for their progress in energy storage applications.Despite this,a comprehensive understanding of the mechanisms underpinning their structural deterioration at elevated voltages remains insufficiently explored.In this study,we unveil a layer delamination phenomenon of Na_(0.67)Ni_(0.3)Mn_(0.7)O_(2)(NNM)within the 2.0-4.3 V voltage,attributed to considerable volumetric fluctuations along the c-axis and lattice oxygen reactions induced by the simultaneous Ni^(3+)/Ni^(4+)and anion redox reactions.By introducing Mg doping to diminished Ni-O antibonding,the anion oxidation-reduction reactions are effectively mitigated,and the structural integrity of the P2 phase remains firmly intact,safeguarding active sites and precluding the formation of novel interfaces.The Na_(0.67)Mg_(0.05)Ni_(0.25)Mn_(0.7)O_(2)(NMNM-5)exhibits a specific capacity of100.7 mA h g^(-1),signifying an 83%improvement compared to the NNM material within the voltage of2.0-4.3 V.This investigation underscores the intricate interplay between high-voltage stability and structural degradation mechanisms in layered sodium-ion oxides.
基金financially supported by the National Natural Science Foundation of China (Grant No. 52071041, 11874356, 51802034)supported by the Key Research Program of Frontier Sciences, CAS (Grant No.QYZDB-SSW-SLH016)
文摘Mg_(3)Sb_(2)has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg_(3)Sb_(2),the dimensionless figure of merit(zT)of p-type Mg_(3)Sb_(2)remains lower than 1,which is mainly attributed to its inferior electrical properties.Herein,we synergistically optimize the thermoelectric properties of p-type Mg_(3)Sb_(2)materials via codoping of Cd and Ag,which were synthesized by high-energy ball milling combined with hot pressing.It is found that Cd doping not only increases the carrier mobility of p-type Mg_(3)Sb_(2),but also diminishes its thermal conductivity(κ_(tot)),with Mg_(2.85)Cd_(0.5)Sb_(2)achieving a lowκtot value of∼0.67 W m^(−1)K^(−1)at room temperature.Further Ag doping elevates the carrier concentration,so that the power factor is optimized over the entire temperature range.Eventually,a peak zT of∼0.75 at 773 K and an excellent average zT of∼0.41 over 300−773 K are obtained in Mg_(2.82)Ag_(0.03)Cd_(0.5)Sb_(2),which are∼240%and∼490%higher than those of pristine Mg_(3.4)Sb_(2),respectively.This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg_(3)Sb_(2)by codoping Cd and Ag,which is beneficial to the future applications of Mg_(3)Sb_(2)-based thermoelectric materials.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2022YFB3803900 and 2018YFA0702100)the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’Large-Scale Scientific Facility(Grant No.U1932106)the Sichuan University Innovation Research Program of China(Grant No.2020SCUNL112)。
文摘Tetradymite-structured chalcogenides,such as Bi_(2)Te_(3) and Sb_(2)Te_(3),are quasi-two-dimensional(2D)layered compounds,which are significant thermoelectric materials applied near room temperature.The intercalation of guest species in van der Waals(vdW)gap implemented for tunning properties has attracted much attention in recent years.We attempt to insert Ga atoms in the vdW gap between the Te layers in p-type Bi_(0.3)Sb_(1.7)Te_(3)(BST)for further improving thermoelectrics.The vdW-related defects(including extrinsic interstitial and intrinsic defects)induced by Ga intercalation can not only modulate the carrier concentration but also enhance the texture,thereby yielding excellent electrical properties,which are reflected in the power factor PF~4.43 mW·m^(-1)·K^(-2).Furthermore,the intercalation of Ga produces multi-scale lattice imperfections such as point defects,Te precipitations,and nanopores,realizing the low lattice thermal conductivity in BST-Ga samples.Ultimately,a peak zT~1.1 at 373 K is achieved in the BST-1%Ga sample and greatly improved by~22%compared to the pristine BST.The weak bonding of vdW interlayer interaction can boost the synergistic effect for advancing BST-based or other layered thermoelectrics.
文摘Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant Nos.2017B010127001 and 2015B010105011)+4 种基金the Education Department Project of Guangdong Province,China(Grant No.2017KZDXM022)the Science and Technology Project of Guangzhou City,China(Grant No.201607010246)the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)the Science and Technology Project of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Science and Technology Planning of Guangdong Province,China(Grant No.2015B010112002)
文摘AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.
基金Project supported by the State Key Program for Basic Research of China(Grant No.2011CB302003)the National Natural Science Foundation of China(Grant Nos.61274058,61322403,61504057,and 61574075)+1 种基金the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20130013 and BK20150585)the Six Talent Peaks Project in Jiangsu Province,China(Grant No.2014XXRJ001)
文摘Zinc oxide(ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent(2011-now) research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.
基金supported by the National Key Research and Development Program of China(No.2017YFA0402203)the National Natural Science Foundation of China(No.11975162)the SPARK project of the research and innovation program of Sichuan University(No.2018SCUH0051)。
文摘The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique.
基金Project supported by the the Science Challenge Project of China(Grant No.TZ2016003)the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,and 61474110)Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)
文摘In this work, we study the influence of carrier gas H_2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H_2 flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H_2 flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.
基金supported by National Natural Science Foundation of China(Nos.11875090,12075032,11775028,11875088,11974048)Beijing Municipal National Science Foundation(Nos.1192008,KZ202010015022)BIGC(Nos.Ea201901,Ee202001)。
文摘In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.
基金supports from the National Natural Science Foundation of China(nos.21473189 and21503100)the 973 National Basic Research Program of China(no.2014CB239401)the Natural Science Foundation of Jiangxi Province of China(no.20151BAB213010)
文摘Pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFe_2O_4 have been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis diffuse reflectance spectra and Mott–Schottky plots show that the band structure of the CaFe_2O_4 nanorods is narrower than that of the CaFe_2O_4 nanoparticles synthesized by conventional method. The enhancement of the visible-light absorption is due to narrowness of the band gap in CaFe_2O_4 nanorods. The appropriate ratio between the molten salt and the CaFe_2O_4 precursors plays an important role in inhibiting the growth of the crystals along the(201) plane to give the desired nanorod morphology. This work not only demonstrates that highly pure p-type CaFe_2O_4 semiconductor with tunable band structure and morphology could be obtained using the molten salt strategy, but also affirms that the bandgap of a semiconductor may be tunable by monitoring the growth of a particular crystal plane.Furthermore, the facile eutectic molten salt method developed in this work may be further extended to fabricate some other semiconductor nanomaterials with a diversity of morphologies.
基金Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México
文摘In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped Ga As.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656the Pearl River S&T Nova Program of Guangzhou
文摘The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease,while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated.Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.
基金Supported by the National Basic Research Program of China under Grant No 2011CBA00605the National Natural Science Foundation of China under Grant No 61404165
文摘Strained-Si_(0.73)Ge_(0.27) channels are successfully integrated with high-κ/metal gates in p-type metal-oxide- semiconductor field effect transistors(pMOSFETs) using the replacement post-gate process.A silicon cap and oxide inter layers are inserted between Si_(0.73)Ge_(0.27) and high-κ dielectric to improve the interface.The fabricated Si_(0.73) Ge_(0.27) pMOSFETs with gate length of 30 nm exhibit good performance with high drive current(~428μA/μm at V_(DD) = 1 V) and suppressed short-channel effects(DIBL^77mV/V and SS^90mV/decade).It is found that the enhancement of effective hole mobility is up to 200%in long-gate-length Si_(0.73) Ge_(0.27)-channel pMOSFETs compared with the corresponding silicon transistors.The improvement of device performance is reduced due to strain relaxation as the gate length decreases,while 26%increase of the drive current is still obtained for 30-nm-gate-length Si_(0.73)Ge_(0.27) devices.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11604337)。
文摘Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi_(2)Sr_(2)CaCu_(2)O_(y) thin films. In this study, epitaxial superconducting Bi_(2)Sr_(2)CuO_(y) and Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin films with superior normal state conductivity are proposed as ptype transparent conductors. It is found that the Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.
文摘Using hybrid density functional calculation,we study the atomic and electronic structures of p-type dopants,B,Al and Ga,in 4H-SiC.For B,depending on the growth condition,it can occupy both Si and C sites.In contrast,Al and Ga on the C sites exhibit too high formation energy to exist in a significant amount.In 4H-SiC,there exist two types of Si sites in wurtzite-like and zincblende-like local coordination,respectively.Our calculations suggest that the dopant atoms have negligible preference occupying the two sites.In neutral charge state,all the dopants exhibit significant distortions from the structure in the negatively charged state.For most cases,our calculations yield three distorted structures,in which the most stable one has the dopant atom displaced along its bond with one of the surrounding equatorial Si or C atoms,lowering the C_(3v) symmetry to C_(s) symmetry(i.e.,a mirror symmetry only).Among the three dopant elements,Al on Si sites exhibits overall the lowest formation energy and the shallowest acceptor level.Nevertheless,it is not a hydrogenic dopant with the acceptor level 0.12 eV above the valence band maximum based on calculation using a 400-atom supercell.Its corresponding defect state exhibits apparent localization along the[0001]direction,but it is relatively delocalized in the(0001)plane.
基金financially supported by the Liaoning Revitalization Talents Program (No. XLYC1807209)。
文摘With the rapid exhaustion of fossil energy, the demand for clean and renewable energy is urgently growing. Thermoelectric(TE) materials, which can directly convert waste heat into electrical energy, are attracting great attention to address the energy crisis [1–3].
基金financially supported by the National Natural Science Foundation of China(Grant No.21090341 and 21361140346)the National Basic Research Program(973 Program)of the Ministry of Science and Technology of China(Grant No.2014CB239401)
文摘A novel Sr2CuInO3 S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type semiconductor character of the synthesized Sr2CuInO3 S was confirmed by Hall efficient measurement and Mott-Schottky plot analysis. First-principles density functional theory calculations(DFT) and electrochemical measurements were performed to elucidate the electronic structure and the energy band locations. It was found that the as-synthesized Sr2CuInO3 S photocatalyst has appreciate conduction and valence band positions for hydrogen and oxygen evolution, respectively. Photocatalytic hydrogen production experiments under a visible light irradiation(λ>420 nm) were carried out by loading different metal and metal-like cocatalysts on Sr2CuInO3 S and Rh was found to be the best one among the tested ones.
基金Funded by the National Social Science Fund Project(No.2012BTY014)
文摘Zinc oxide (ZnO) is a wide band-gap material of the II-VI group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carried out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.
