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Identification of Topological Surface State in PdTe2 Superconductor by Angle-Resolved Photoemission Spectroscopy 被引量:1
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作者 刘艳 赵建洲 +16 位作者 俞理 林成天 梁爱基 胡成 丁颖 徐煜 何少龙 赵林 刘国东 董晓莉 张君 陈创天 许祖彦 翁红明 戴希 方忠 周兴江 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第6期136-140,共5页
High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for th... High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deeply below the Fermi level at - 1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deeply below the Fermi level provides a unique system to explore new phenomena and properties and opens a door for finding new topological materials in transition metal ehalcogenides. 展开更多
关键词 Identification of Topological Surface State in pdte2 Superconductor by Angle-Resolved Photoemission Spectroscopy ARPES
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PdTe2纳米薄膜的电和热输运特性研究
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作者 缪婷婷 向梦贤 李大炜 《工程热物理学报》 EI CAS CSCD 北大核心 2020年第12期3041-3045,共5页
作为第二类狄拉克半金属,PdTe2由于具有低温超导电性和特殊的能带结构,研究者们对该材料的探索集中在超导和拓扑特性,对室温下PdTe2纳米薄膜的电和热输运性质的研究尚未报道。本文采用直流通电加热法测量了厚度为136 nm的PdTe2薄膜在30... 作为第二类狄拉克半金属,PdTe2由于具有低温超导电性和特殊的能带结构,研究者们对该材料的探索集中在超导和拓扑特性,对室温下PdTe2纳米薄膜的电和热输运性质的研究尚未报道。本文采用直流通电加热法测量了厚度为136 nm的PdTe2薄膜在300 K下的电导率、热导率和磁致电阻。薄膜在室温下的电导率为3.7×10^6 S.m^-1,在迄今已研究的二维材料中是非常高的,甚至与一些传统金属铁、锌、锡和铂相当。室温下的热导率为130 W.m^-1.K^-1,远高于黄铜、青铜和铅等传统金属。薄膜的磁致电阻随磁场强度增大而增大,且正比于磁场强度的二次方,14 T时最大值为0.94%。 展开更多
关键词 pdte2纳米薄膜 电导率 热导率 磁致电阻
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Electronic structure of transition metal dichalcogenides PdTe_2 and Cu_(0.05)PdTe_2 superconductors obtained by angle-resolved photoemission spectroscopy 被引量:1
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作者 刘艳 赵建洲 +21 位作者 俞理 林成天 胡成 刘德发 彭莹莹 谢卓晋 何俊峰 陈朝宇 冯娅 伊合绵 刘旭 赵林 何少龙 刘国东 董晓莉 张君 陈创天 许祖彦 翁虹明 戴希 方忠 周兴江 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期100-108,共9页
The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great atten... The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu- intercalated form, Cuo.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mecha- nism. Here we report systematic high resolution angle-resolved photoemission (ARPES) studies on PdTe2 and Cuo.05PdTe2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cuo.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors. 展开更多
关键词 transition metal dichalcogenides pdte2 SUPERCONDUCTOR PHOTOEMISSION
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High quality PdTe_2 thin films grown by molecular beam epitaxy 被引量:1
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作者 En Li Rui-Zi Zhang +9 位作者 Hang Li Chen Liu Geng Li Jia-Ou Wang Tian Qian Hong Ding Yu-Yang Zhang Shi-Xuan Du Xiao Lin Hong-Jun Gao 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期72-76,共5页
PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform ... PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the inter- play between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spec- troscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices. 展开更多
关键词 two-dimensional materials transition-metal dichalcogenides pdte2 molecular beam epitaxy
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