The copolymers of chloroethyl methacrylate (CMA), glycidyl methacrylate (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Their breadths of the molecular weight distributions are 2.1 and 2.3,...The copolymers of chloroethyl methacrylate (CMA), glycidyl methacrylate (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Their breadths of the molecular weight distributions are 2.1 and 2.3, respectively. The thermal stability of P(GMA-CMA) is superior to that of P(CMA-MMA). The resolutions of P(CMA-MMA) and P(GMA-CMA) photoresists were found to be 0.1-0.16 mu m and 0.17-0.2 mu m, respectively. (Author abstract) 9 Refs.展开更多
Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices.To date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries ove...Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices.To date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries over the past few decades.It is obvious that extreme ultraviolet(EUV)lithography has become the next-generation lithography technology.The development of comprehensive performance EUV resist is one of the most critical issues.However,organic polymeric photoresists are difficult to meet the harsh requirements of EUV lithography.Pure inorganic photoresists such as metal salts,hydrogen silsesquioxane(HSQ)are expected for EUV lithography due to their high resistance and high resolution.But the low sensitivity makes them not suitable for high volume manufacturing(HVM).Organic-inorganic hybrid photoresists,containing both organic and inorganic components,are regarded as one of the most promising EUV resists.They combine both merits of organic and inorganic materials and have significant advantages in machinability,etching resistance,EUV absorption,and chemical/thermal stability.Organic-inorganic hybrid photoresists are considered as ideal materials for realizing industrialgrade patterns below 10 nm.This review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade.展开更多
Epoxy acrylate (EA) resin, which originates from epoxides, has long been served as a photocurable coating and adhesive material owing to its double bonds. Specifically, alkaline-developable EA resins can be used as a ...Epoxy acrylate (EA) resin, which originates from epoxides, has long been served as a photocurable coating and adhesive material owing to its double bonds. Specifically, alkaline-developable EA resins can be used as a binder polymer in negative-tone photoresists. In this work, we synthesized a series of acidic polyester-type epoxy methacrylate resins, characterized the intermediates and products, and tested their performance as a binder polymer for the photolithographic micro-patterning of the pixel-defining layer on organic light-emitting diodes in comparison to a widely used commercial binder polymer. Copolymer-type binder polymer BP-2-2 was produced excellent patterning with no residue due to its high compatibility with the black mill base.展开更多
Extreme ultraviolet lithography(EUVL)and electron beam lithography(EBL)are considered to be crucial lithography techniques utilized in the fabrication of nanoscale semiconductor devices.However,the industry currently ...Extreme ultraviolet lithography(EUVL)and electron beam lithography(EBL)are considered to be crucial lithography techniques utilized in the fabrication of nanoscale semiconductor devices.However,the industry currently faces a scarcity of EUV photoresists that meet the increasingly challenging standards in terms of resolution,sensitivity and roughness.Metal oxo nanoclusters have garnered significant interest in the field of EUV photoresist due to their relatively stronger absorption cross-section for extreme ultraviolet light and lower dimensions.In this study,we utilize a heterometallic nanocluster strategy by a combination of titanium and zirconium metals to investigate their solubility,assess the suitability of various developers,and evaluate their performance in electron-beam and EUVL,as well as study their etch resistance for pattern transfer.We demonstrate that R-4 is able to get a critical dimension(CD)of 25 nm at low doses under EBL,as well as 50 nm resolution at EUVL with a remarkable sensitivity of 19.7 mJ cm−2.This study offers an efficient heterometallic method for optimizing the lithographic performance of metal oxo nanocluster photoresists,which can benefit the development of commercially viable next-generation EUV photoresists.展开更多
Transparent photoresists with a high refractive index(RI)and high transmittance in visible wavelengths have promising functionalities in optical fields.This work reports a kind of tunable optical material composed of ...Transparent photoresists with a high refractive index(RI)and high transmittance in visible wavelengths have promising functionalities in optical fields.This work reports a kind of tunable optical material composed of titanium dioxide nanoparticles embedded in acrylic resin with a high RI for ultraviolet(UV)-imprint lithography.The hybrid film exhibits a tunable RI of up to 1.67(589 nm)after being cured by UV light,while maintaining both a high transparency of over 98%in the visible light range and a low haze of less than 0.05%.The precision machining of optical microstructures can be imprinted easily and efficiently using the hybrid resin,which acts as a light guide plate(LGP)to guide the light from the side to the top in order to conserve the energy of the display device.These preliminary studies based on both laboratory and commercial experiments pave the way for exploiting the unparalleled optical properties of nanocomposite resins and promoting their industrial application.展开更多
A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concen...A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl(t-Boc),photo-generated acid(PAG),and acid quencher was systematically investigated.Based on experiments,some solutions for reducing the outgassing of MG photoresists were proposed.展开更多
Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the...Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.展开更多
Polycyclotrimerization and polycoupling of acetylenic monomers respectively furnish hyperbranched polyarylenes and polyynes with high molecular weights （up to 1 × 10^6） in high yields （up to 99.9%）. The polym...Polycyclotrimerization and polycoupling of acetylenic monomers respectively furnish hyperbranched polyarylenes and polyynes with high molecular weights （up to 1 × 10^6） in high yields （up to 99.9%）. The polymers possess low intrinsic viscosities and high thermal stabilities, losing little of their weights when heated to 〉 400℃. Upon pyrolysis at 〉 800℃, the polymers graphitize with high char yields （up to 86%）. Hyperbranched polyarylenes efficiently emit deep-blue to blue-green lights with fluorescence quantum yields up to 98% and strongly attenuate intense laser pulses with optical power-limiting performances superior to that of C60, a well-known optical limiter. Poly（alkenephenylenes）, poly（aroylarylenes） and polyynes are readily cross-linkable by UV irradiation, serving as excellent photoresist materials for the generation of patterns with nanometer resolution. Thin films of hyperbranched polyynes exhibit very high refractive indexes （n up to 1.86）. The internal and terminal acetylene moieties of the polyynes readily form complexes with cobalt carbonyls, which can be transformed into soft ferromagnetic ceramics with high magnetic susceptibilities （Ms up to ca. 118 emu/g） and near-zero magnetic losses.展开更多
The matrix polymer PTBCHNB bearing o-nitrobenzyl group was successfully synthesized by copolymerization of tertiary-butyl methacrylate(TBMA), cyclohexyl methacrylate(CHMA) and o-nitrobenzyl methacrylate(NBMA) via reve...The matrix polymer PTBCHNB bearing o-nitrobenzyl group was successfully synthesized by copolymerization of tertiary-butyl methacrylate(TBMA), cyclohexyl methacrylate(CHMA) and o-nitrobenzyl methacrylate(NBMA) via reversible addition fragmentation chain transfer(RAFT) polymerization method. PTBCHNB was characterized by FTIR, 1HNMR, GPC and DSC. After UV irradiation, the o-nitrobenzyl groups of PTBCHNB were photocleaved and the resulting carboxyl groups were highly alkali soluble, and PTBCHNB was converted to PCHIBMA bearing carboxyl groups. So, the matrix polymer could be etched by mild alkali solution with no requirements of photoacid generators and other diverse additives. The photocleavable behaviors of PTBCHNB were determined by FTIR, 1H NMR and TGA analysis. The resist formulated with PTBCHNB and cast in THF solution showed square pattern of 10 μm×10 μm using a mercury-xenon lamp in a contact printing mode and tetramethyl-ammonium hydroxide aqueous solution as a developer.展开更多
We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted ...We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.展开更多
UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA...UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA）, and 2,2-his （hydroxymethyl） propionic acid （DMPA）. The UV-HBPU was used as a negative-type photoresist for a printed circuit board （PCB）. Fourier-transform infrared spectroscopy （FTIR） and proton nuclear magnetic resonance （1HNMR） spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry （DSC） and thermogravimetric analysis （TGA） showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.展开更多
In this paper,we report the study of the process of fabricating a multi-layermetal micro-structure using UV-LIGA overlay technology,includingmask fabrication,substrate treatment,and UV-LIGA overlay processes.To solve ...In this paper,we report the study of the process of fabricating a multi-layermetal micro-structure using UV-LIGA overlay technology,includingmask fabrication,substrate treatment,and UV-LIGA overlay processes.To solve the process problems in the masking procedure,the swelling problemof the first layer of SU-8 thick photoresist was studied experimentally.The 5μmline-width compensation and closed 20μmand 30μmisolation strips were designed and fabricated around the micro-structure pattern.The pore problemin the Ni micro-electroforming layer was analyzed and the electroforming parameters were improved.The pH value of the electroforming solution should be controlled between 3.8 and 4.4 and the current density should be below 3 A/dm^2.To solve the problems of high inner stress and incomplete development of the micro-cylinder hole array with a diameter of 30μm,the lithography process was optimized.The pre-baking temperature was increased via gradient heating and rose every 5℃ from 65℃ to 85℃ and then remained at 85℃ for 50 min–1 h.In addition,the full contact exposure was used.Finally,a multi-layer metal micro-structure with high precision and good quality of microelectroforming layer was fabricated using UV-LIGA overlay technology.展开更多
Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, ...Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution （IED） at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.展开更多
Skin aging is a process most often attributed to UV<span><span><span style="font-family:" minion="" pro="" capt","serif";"=""><span styl...Skin aging is a process most often attributed to UV<span><span><span style="font-family:" minion="" pro="" capt","serif";"=""><span style="font-family:Verdana;"> </span></span></span></span><span><span><span style="font-family:" minion="" pro="" capt","serif";"=""><span></span></span></span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">[1]</span></span></span><span><span><span style="font-family:" color:#943634;"=""></span></span></span><span><span></span></span><span></span><span><span><span></span></span></span><span><span></span></span><span></span><span><span></span></span><span><span><span style="font-family:" color:red;"=""> </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">and</span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;"> also to the use of creams and other cosmetic products low in antioxidant compounds </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">[2]</span></span></span><span><span><span style="font-family:;" "=""></span></span></span><span><span></span></span><span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">. Photochemically stable pepo Cucurbita oil can be used as an exogenous cosmetic supplement due to its high antioxidant content. Incorporated in an agar, media containing a synthetic melanin solution with added pumpkin oil are subjected to UV light, the aging thus modeled is followed by the measurement of photoresistance values correlated with chemical and spectrophotometric analyses. This study confirms that pumpkin oil is highly effective in protecting the skin, especially the most sensitive skins such as babies’ skin </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">[3]</span></span></span><span><span><span style="font-family:;" "=""></span></span></span><span><span></span></span><span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;"> by reinforcing the action of melanin </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">and</span></span></span><span><span><span style="font-family:;" "=""><span style="font-family:Verdana;"> also that of albinos without melanin. Indeed its SPF (<b>Significant Sun Protection Factor</b>) index estimated during this work is very consistent,</span><i><span style="font-family:Verdana;"> i.e.</span></i><span style="font-family:Verdana;"> more than 22% of UVB (<b>280</span></span></span></span><span><span><span style="font-family:;" "=""> </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">-</span></span></span><span><span><span style="font-family:;" "=""> </span></span></span><span><span><span style="font-family:Verdana;">315 nm</b>) radiations are suppressed.展开更多
Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been inven...Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.展开更多
Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions t...Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions that acrylate type double bonds cannot withstand. In this work, synthetic methods are developed to obtain polyester-imide type binder polymers with high thermal stability, high compatibility with the other components of the black photoresist, and fine photolithographic patterning property for the negative-tone black photoresist. The syntheses of diimide-diacid or diimide-diol intermediates for the polyesterification with dianhydride gave polyester imides which meets this requirement. The photolithographic tests have shown that the patterning of the micron-sized PDL of the organic light emitting diode (OLED) panel could be obtained. This work will interest the researchers working on the design and optimization of thermally stable binder polymers.展开更多
A new copolymer was synthesized by free radical polymerization in solution from methyl 3α-methylacryloyl-7α, 12α-dihydroxy-5β-cholan-24-oate (MACAME) and maleic anhydride (MAN). The copolymer was characterized by ...A new copolymer was synthesized by free radical polymerization in solution from methyl 3α-methylacryloyl-7α, 12α-dihydroxy-5β-cholan-24-oate (MACAME) and maleic anhydride (MAN). The copolymer was characterized by FT-IR and functional group analysis. The reactivity ratios of the two monomers were estimated [r_1 = 11.6 (MACAME), r_2 = 0.01(MAN)] by conducting a series of copolymerizations with a variety of monomer feed compositions and analyzing thecopolymer composition. Thermogravimetric and differential scanning calorimetric analyses of the samples indicate that thecopolymer possesses good thermal stability. The temperature at which the copolymer samples experienced a 10% weight loss(T_(WL)) is over 287℃, and the T_g ranged from 174 to 185℃ for the copolymers.展开更多
Dry etching has now become one of the key processes of high ratio of depth to width microstructure and fine patterning. This paper presents a new dry etching technology - multilayer reactive ion etching technology （M...Dry etching has now become one of the key processes of high ratio of depth to width microstructure and fine patterning. This paper presents a new dry etching technology - multilayer reactive ion etching technology （MRIE）. By taking full advantage of the spatial layout of the chamber, arranging multi-layer electrodes and transporting the discharged gas by a layered air supply device, the function of simultaneous etching in every reaction chamber （layer） is realized. This method can significantly enhance the productivity. Taking the photoresist etching by MRIE as an example, the law and mechanism influencing the etching rate and uniformity were analyzed for different conditions. The result shows that when plate distance is 50/55/60 mm （from bottom to top）, and vacuum degree, ratio of O2 to Ar, RF source power, and continuous etching time are respectively 40 Pa, 1/2, 600 W, and 20 min, the optimal process is achieved. The average etching rate and uniformity are 143.93 A/min and 9.8%, respectively.展开更多
In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the a...In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating （BARC）. By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.展开更多
A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the proce...A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the process of lens production, the height of original photoresist cylinders and the angle of contact between the melted photoresist and the substrate, are discussed in detail. The diffraction limited full--aperture microlens arrays have been obtained,and some measurement results are shown in the paper. A method of controlling the formation of quality microlens array in real time is suggested.展开更多
基金This work is financially supported by the National Natural Science Foundation of China.
文摘The copolymers of chloroethyl methacrylate (CMA), glycidyl methacrylate (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Their breadths of the molecular weight distributions are 2.1 and 2.3, respectively. The thermal stability of P(GMA-CMA) is superior to that of P(CMA-MMA). The resolutions of P(CMA-MMA) and P(GMA-CMA) photoresists were found to be 0.1-0.16 mu m and 0.17-0.2 mu m, respectively. (Author abstract) 9 Refs.
基金Financial support from the National Natural Science Foundation of China(22090012,U20A20144,21873106,22073108 and 21903085)the Ministry of Science and Technology of China Major Project(2018ZX02102005,2011ZX02701)is gratefully acknowledged.
文摘Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices.To date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries over the past few decades.It is obvious that extreme ultraviolet(EUV)lithography has become the next-generation lithography technology.The development of comprehensive performance EUV resist is one of the most critical issues.However,organic polymeric photoresists are difficult to meet the harsh requirements of EUV lithography.Pure inorganic photoresists such as metal salts,hydrogen silsesquioxane(HSQ)are expected for EUV lithography due to their high resistance and high resolution.But the low sensitivity makes them not suitable for high volume manufacturing(HVM).Organic-inorganic hybrid photoresists,containing both organic and inorganic components,are regarded as one of the most promising EUV resists.They combine both merits of organic and inorganic materials and have significant advantages in machinability,etching resistance,EUV absorption,and chemical/thermal stability.Organic-inorganic hybrid photoresists are considered as ideal materials for realizing industrialgrade patterns below 10 nm.This review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade.
文摘Epoxy acrylate (EA) resin, which originates from epoxides, has long been served as a photocurable coating and adhesive material owing to its double bonds. Specifically, alkaline-developable EA resins can be used as a binder polymer in negative-tone photoresists. In this work, we synthesized a series of acidic polyester-type epoxy methacrylate resins, characterized the intermediates and products, and tested their performance as a binder polymer for the photolithographic micro-patterning of the pixel-defining layer on organic light-emitting diodes in comparison to a widely used commercial binder polymer. Copolymer-type binder polymer BP-2-2 was produced excellent patterning with no residue due to its high compatibility with the black mill base.
基金supported by the National Natural Science Foundation of China(22271284 and 91961108)“the Fundamental Research Funds for the Central Universities”,Nankai University(075-63233091)。
文摘Extreme ultraviolet lithography(EUVL)and electron beam lithography(EBL)are considered to be crucial lithography techniques utilized in the fabrication of nanoscale semiconductor devices.However,the industry currently faces a scarcity of EUV photoresists that meet the increasingly challenging standards in terms of resolution,sensitivity and roughness.Metal oxo nanoclusters have garnered significant interest in the field of EUV photoresist due to their relatively stronger absorption cross-section for extreme ultraviolet light and lower dimensions.In this study,we utilize a heterometallic nanocluster strategy by a combination of titanium and zirconium metals to investigate their solubility,assess the suitability of various developers,and evaluate their performance in electron-beam and EUVL,as well as study their etch resistance for pattern transfer.We demonstrate that R-4 is able to get a critical dimension(CD)of 25 nm at low doses under EBL,as well as 50 nm resolution at EUVL with a remarkable sensitivity of 19.7 mJ cm−2.This study offers an efficient heterometallic method for optimizing the lithographic performance of metal oxo nanocluster photoresists,which can benefit the development of commercially viable next-generation EUV photoresists.
基金supported by the National Natural Science Foundation of China(22288102 and 22278027).
文摘Transparent photoresists with a high refractive index(RI)and high transmittance in visible wavelengths have promising functionalities in optical fields.This work reports a kind of tunable optical material composed of titanium dioxide nanoparticles embedded in acrylic resin with a high RI for ultraviolet(UV)-imprint lithography.The hybrid film exhibits a tunable RI of up to 1.67(589 nm)after being cured by UV light,while maintaining both a high transparency of over 98%in the visible light range and a low haze of less than 0.05%.The precision machining of optical microstructures can be imprinted easily and efficiently using the hybrid resin,which acts as a light guide plate(LGP)to guide the light from the side to the top in order to conserve the energy of the display device.These preliminary studies based on both laboratory and commercial experiments pave the way for exploiting the unparalleled optical properties of nanocomposite resins and promoting their industrial application.
基金financially supported by the National Natural Science Foundation of China(21373240,91123033,21233011)the National Science and Technology Major Project of China(2011ZX02701)
文摘A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl(t-Boc),photo-generated acid(PAG),and acid quencher was systematically investigated.Based on experiments,some solutions for reducing the outgassing of MG photoresists were proposed.
基金supported by the National Key Research and Development Program of China(Nos.2021YFA1601003,2017YFA0206002,2017YFA0403400)the National Natural Science Foundation of China(No.11775291)。
文摘Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.
基金This work was partially supported by the Hong Kong Research Grants Council,the University Grants Committee of Hong Kong,and the National Natural Science Foundation of China.
文摘Polycyclotrimerization and polycoupling of acetylenic monomers respectively furnish hyperbranched polyarylenes and polyynes with high molecular weights （up to 1 × 10^6） in high yields （up to 99.9%）. The polymers possess low intrinsic viscosities and high thermal stabilities, losing little of their weights when heated to 〉 400℃. Upon pyrolysis at 〉 800℃, the polymers graphitize with high char yields （up to 86%）. Hyperbranched polyarylenes efficiently emit deep-blue to blue-green lights with fluorescence quantum yields up to 98% and strongly attenuate intense laser pulses with optical power-limiting performances superior to that of C60, a well-known optical limiter. Poly（alkenephenylenes）, poly（aroylarylenes） and polyynes are readily cross-linkable by UV irradiation, serving as excellent photoresist materials for the generation of patterns with nanometer resolution. Thin films of hyperbranched polyynes exhibit very high refractive indexes （n up to 1.86）. The internal and terminal acetylene moieties of the polyynes readily form complexes with cobalt carbonyls, which can be transformed into soft ferromagnetic ceramics with high magnetic susceptibilities （Ms up to ca. 118 emu/g） and near-zero magnetic losses.
基金Project(2008AA03323) supported by the High-Tech Research and Development of ChinaProject(21374016) supported by the National Natural Science Foundation of ChinaProject(BY201153) supported by Production,Forward-Looking Joint Research Project of Jiangsu Province,China
文摘The matrix polymer PTBCHNB bearing o-nitrobenzyl group was successfully synthesized by copolymerization of tertiary-butyl methacrylate(TBMA), cyclohexyl methacrylate(CHMA) and o-nitrobenzyl methacrylate(NBMA) via reversible addition fragmentation chain transfer(RAFT) polymerization method. PTBCHNB was characterized by FTIR, 1HNMR, GPC and DSC. After UV irradiation, the o-nitrobenzyl groups of PTBCHNB were photocleaved and the resulting carboxyl groups were highly alkali soluble, and PTBCHNB was converted to PCHIBMA bearing carboxyl groups. So, the matrix polymer could be etched by mild alkali solution with no requirements of photoacid generators and other diverse additives. The photocleavable behaviors of PTBCHNB were determined by FTIR, 1H NMR and TGA analysis. The resist formulated with PTBCHNB and cast in THF solution showed square pattern of 10 μm×10 μm using a mercury-xenon lamp in a contact printing mode and tetramethyl-ammonium hydroxide aqueous solution as a developer.
文摘We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.
基金Funded by the National Natural Science Foundation of China(Nos.51203063,51103064)
文摘UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA）, and 2,2-his （hydroxymethyl） propionic acid （DMPA）. The UV-HBPU was used as a negative-type photoresist for a printed circuit board （PCB）. Fourier-transform infrared spectroscopy （FTIR） and proton nuclear magnetic resonance （1HNMR） spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry （DSC） and thermogravimetric analysis （TGA） showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.
文摘In this paper,we report the study of the process of fabricating a multi-layermetal micro-structure using UV-LIGA overlay technology,includingmask fabrication,substrate treatment,and UV-LIGA overlay processes.To solve the process problems in the masking procedure,the swelling problemof the first layer of SU-8 thick photoresist was studied experimentally.The 5μmline-width compensation and closed 20μmand 30μmisolation strips were designed and fabricated around the micro-structure pattern.The pore problemin the Ni micro-electroforming layer was analyzed and the electroforming parameters were improved.The pH value of the electroforming solution should be controlled between 3.8 and 4.4 and the current density should be below 3 A/dm^2.To solve the problems of high inner stress and incomplete development of the micro-cylinder hole array with a diameter of 30μm,the lithography process was optimized.The pre-baking temperature was increased via gradient heating and rose every 5℃ from 65℃ to 85℃ and then remained at 85℃ for 50 min–1 h.In addition,the full contact exposure was used.Finally,a multi-layer metal micro-structure with high precision and good quality of microelectroforming layer was fabricated using UV-LIGA overlay technology.
基金supported by National Natural Science Foundation of China (Nos.11075029, 10975030)the Important National Science and Technology Specific Project of China (No.2011ZX02403-001)
文摘Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution （IED） at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.
文摘Skin aging is a process most often attributed to UV<span><span><span style="font-family:" minion="" pro="" capt","serif";"=""><span style="font-family:Verdana;"> </span></span></span></span><span><span><span style="font-family:" minion="" pro="" capt","serif";"=""><span></span></span></span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">[1]</span></span></span><span><span><span style="font-family:" color:#943634;"=""></span></span></span><span><span></span></span><span></span><span><span><span></span></span></span><span><span></span></span><span></span><span><span></span></span><span><span><span style="font-family:" color:red;"=""> </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">and</span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;"> also to the use of creams and other cosmetic products low in antioxidant compounds </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">[2]</span></span></span><span><span><span style="font-family:;" "=""></span></span></span><span><span></span></span><span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">. Photochemically stable pepo Cucurbita oil can be used as an exogenous cosmetic supplement due to its high antioxidant content. Incorporated in an agar, media containing a synthetic melanin solution with added pumpkin oil are subjected to UV light, the aging thus modeled is followed by the measurement of photoresistance values correlated with chemical and spectrophotometric analyses. This study confirms that pumpkin oil is highly effective in protecting the skin, especially the most sensitive skins such as babies’ skin </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">[3]</span></span></span><span><span><span style="font-family:;" "=""></span></span></span><span><span></span></span><span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;"> by reinforcing the action of melanin </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">and</span></span></span><span><span><span style="font-family:;" "=""><span style="font-family:Verdana;"> also that of albinos without melanin. Indeed its SPF (<b>Significant Sun Protection Factor</b>) index estimated during this work is very consistent,</span><i><span style="font-family:Verdana;"> i.e.</span></i><span style="font-family:Verdana;"> more than 22% of UVB (<b>280</span></span></span></span><span><span><span style="font-family:;" "=""> </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">-</span></span></span><span><span><span style="font-family:;" "=""> </span></span></span><span><span><span style="font-family:Verdana;">315 nm</b>) radiations are suppressed.
文摘Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.
文摘Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions that acrylate type double bonds cannot withstand. In this work, synthetic methods are developed to obtain polyester-imide type binder polymers with high thermal stability, high compatibility with the other components of the black photoresist, and fine photolithographic patterning property for the negative-tone black photoresist. The syntheses of diimide-diacid or diimide-diol intermediates for the polyesterification with dianhydride gave polyester imides which meets this requirement. The photolithographic tests have shown that the patterning of the micron-sized PDL of the organic light emitting diode (OLED) panel could be obtained. This work will interest the researchers working on the design and optimization of thermally stable binder polymers.
基金NSERC of Canada and Nankai University for financial support. H. Li thanks the National Natural Science Foundation of China for a travel award in support of the collaborative research program (No. 20074016).
文摘A new copolymer was synthesized by free radical polymerization in solution from methyl 3α-methylacryloyl-7α, 12α-dihydroxy-5β-cholan-24-oate (MACAME) and maleic anhydride (MAN). The copolymer was characterized by FT-IR and functional group analysis. The reactivity ratios of the two monomers were estimated [r_1 = 11.6 (MACAME), r_2 = 0.01(MAN)] by conducting a series of copolymerizations with a variety of monomer feed compositions and analyzing thecopolymer composition. Thermogravimetric and differential scanning calorimetric analyses of the samples indicate that thecopolymer possesses good thermal stability. The temperature at which the copolymer samples experienced a 10% weight loss(T_(WL)) is over 287℃, and the T_g ranged from 174 to 185℃ for the copolymers.
文摘Dry etching has now become one of the key processes of high ratio of depth to width microstructure and fine patterning. This paper presents a new dry etching technology - multilayer reactive ion etching technology （MRIE）. By taking full advantage of the spatial layout of the chamber, arranging multi-layer electrodes and transporting the discharged gas by a layered air supply device, the function of simultaneous etching in every reaction chamber （layer） is realized. This method can significantly enhance the productivity. Taking the photoresist etching by MRIE as an example, the law and mechanism influencing the etching rate and uniformity were analyzed for different conditions. The result shows that when plate distance is 50/55/60 mm （from bottom to top）, and vacuum degree, ratio of O2 to Ar, RF source power, and continuous etching time are respectively 40 Pa, 1/2, 600 W, and 20 min, the optimal process is achieved. The average etching rate and uniformity are 143.93 A/min and 9.8%, respectively.
基金Project supported by the National Special Program of China (Grant No. 2009ZX02204-008)the National Basic Research Program of China (Grant No. 2007AA01Z333)
文摘In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating （BARC）. By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.
文摘A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the process of lens production, the height of original photoresist cylinders and the angle of contact between the melted photoresist and the substrate, are discussed in detail. The diffraction limited full--aperture microlens arrays have been obtained,and some measurement results are shown in the paper. A method of controlling the formation of quality microlens array in real time is suggested.
