期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Numerical analysis of solid–liquid interface shape during largesize single crystalline silicon with Czochralski method 被引量:4
1
作者 Ran Teng Qing Chang +3 位作者 Yang Li Bin Cui Qing-Hua Xiao Guo-Hu Zhang 《Rare Metals》 SCIE EI CAS CSCD 2017年第4期289-294,共6页
Numerical analysis is an effective tool to research the industrial Czochralski (CZ) crystal growth aiming to improve crystal quality and reduce manufactur- ing costs. In this study, a set of global simulations were ... Numerical analysis is an effective tool to research the industrial Czochralski (CZ) crystal growth aiming to improve crystal quality and reduce manufactur- ing costs. In this study, a set of global simulations were carried out to investigate the effect of crystal-crucible rotation and pulling rate on melt convection and solid- liquid (SL) interface shape. Through analyses of the sim- ulation data, it is found that the interface deformation and inherent stress increase during the crystal growth process. The interface deflection increases from 7.4 to 51.3 mm with an increase in crystal size from 150 to 400 mm. In addition, the SL interface shape and flow pattern are sen- sitive to pulling rate and rotation rate. Reducing pulling rate can flat SL interface shape and add energy-consuming. Interface with low deflection can be achieved by adopting certain combination of crystal and crucible rotation rates. The effect of crystal rotation on SL interface shape is less significant at higher crucible rotation rates. 展开更多
关键词 Czochralski method Numerical analysis pullrate Crucible rotation Crystal rotation Solid/liquidinterface shape
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部