This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack chan...This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool.展开更多
A large-area high-power radio-frequency（RF） driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute（KAERI）. The RF ion source consists of a dr...A large-area high-power radio-frequency（RF） driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute（KAERI）. The RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of high-power RF discharge. Plasma ignition of the ion source is initiated by the injection of argongas without a starter-filament heating, and the argon-gas is then slowly exchanged by the injection of hydrogen-gas to produce pure hydrogen plasmas. The uniformities of the plasma parameter,such as a plasma density and an electron temperature, are measured at the lowest area of the driver region using two RF-compensated electrostatic probes along the direction of the shortand long-dimensions of the driver region. The plasma parameters will be compared with those obtained at the lowest area of the expansion bucket to analyze the plasma expansion properties from the driver region to the expansion region.展开更多
文摘This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool.
基金supported by the Ministry of Science,ICT and Future Planning of the Republic of Korea under the ITER Technology R&D ProgramNational R&D Program Through the National Research Foundation of Korea(NRF)Funded by the Ministry of Science,ICT&Future Planning(NRF-2014M1A7A1A03045372)
文摘A large-area high-power radio-frequency（RF） driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute（KAERI）. The RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of high-power RF discharge. Plasma ignition of the ion source is initiated by the injection of argongas without a starter-filament heating, and the argon-gas is then slowly exchanged by the injection of hydrogen-gas to produce pure hydrogen plasmas. The uniformities of the plasma parameter,such as a plasma density and an electron temperature, are measured at the lowest area of the driver region using two RF-compensated electrostatic probes along the direction of the shortand long-dimensions of the driver region. The plasma parameters will be compared with those obtained at the lowest area of the expansion bucket to analyze the plasma expansion properties from the driver region to the expansion region.
