A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the tr...A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.展开更多
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035...AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×10 13cm -2at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The f t,unit-current-gain frequency of the devices,is about 18.8GHz.展开更多
InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. S...InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy （TEM）. The results show that a high density of line contrasts, parallel to the growth direction （c-axis）, was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent rnisoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.展开更多
Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obta...Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.展开更多
A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a c...A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a crucial role in eliminating 30 rotation domains, controlling polarity and decreasing defect density in ZnO epilayers, as demonstrated by in situ reflection high energy electron diffraction, ex situ high resolution X-ray diffraction and high resolution cross-sectional transmission electron microscopy. Zn-polar film of ZnO was determined by convergent beam electron diffraction. A Ga bilayer model is proposed to understand the effects of the Ga wetting layer on high-quality ZnO growth.展开更多
文摘A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.
文摘AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×10 13cm -2at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The f t,unit-current-gain frequency of the devices,is about 18.8GHz.
基金supported by the Thailand Center of Excellence in Physics(Th EP)the King Mongkut’s University of Technology Thonburi under The National Research University Project+2 种基金supported by the National Research Council of Thailand(NRCT)the Thai Government Stimulus Package 2(TKK2555)the Project for Establishment of Comprehensive Center for Innovative Food,Health Products and Agriculture
文摘InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy （TEM）. The results show that a high density of line contrasts, parallel to the growth direction （c-axis）, was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent rnisoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.
基金Supported by the Special Funds for Major State Basic Research Project of China under Grant No 2006CB6049, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Ministry of Education of China （10416）, the Research Fund for the Doctoral Programme of Higher Education of China （20050284004）, and the Natural Science Foundation of Jiangsu Province （BK2005210 and BK2006126）.
文摘Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.
基金The authors would like to thank Prof.Zhou Junming for the technical assistance.This work was supported by the National Natural Science Foundation of China(Grant Nos.60376004,10174089,and 60021403)the Nation Key Basic Research and Development Programme of China(Grant No.2002CB613502).
文摘A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a crucial role in eliminating 30 rotation domains, controlling polarity and decreasing defect density in ZnO epilayers, as demonstrated by in situ reflection high energy electron diffraction, ex situ high resolution X-ray diffraction and high resolution cross-sectional transmission electron microscopy. Zn-polar film of ZnO was determined by convergent beam electron diffraction. A Ga bilayer model is proposed to understand the effects of the Ga wetting layer on high-quality ZnO growth.
