In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about t...In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.展开更多
In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance si...In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance sim...In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.展开更多
Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, ...Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.展开更多
固醇调节元件结合蛋白SREBPs(sterol regulatory element bingding proteins)是真核细胞内调节脂质合成的关键核转录因子.新合成的SREBPs是一种没有活性的前体蛋白,通过两个跨膜α-螺旋结合在内质网上,必须由内质网转运到高尔基体后... 固醇调节元件结合蛋白SREBPs(sterol regulatory element bingding proteins)是真核细胞内调节脂质合成的关键核转录因子.新合成的SREBPs是一种没有活性的前体蛋白,通过两个跨膜α-螺旋结合在内质网上,必须由内质网转运到高尔基体后,才能加工成有活性转录因子--核SREBPs(nSREBPs).……展开更多
文摘In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.
文摘In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.
文摘Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.
